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2N5303 Engineering Reference – Equivalent & Substitute Parts
Part Overview
The Microchip Technology 2N5303 is a Bipolar Junction Transistor (BJT) in NPN configuration, rated for 80 V collector-emitter breakdown and 20 A maximum collector current, with a 5 W maximum power dissipation. It features a TO-204AD (TO-3) through-hole package and is currently active in distribution channels. Alternate part selection is required when inventory, compliance, or product status constraints necessitate a compatible substitution in the same transistor category.
Substiute Parts
Key Parameters
| Parameter | 2N5303 Value | Description |
|---|---|---|
| Transistor Type | NPN | Polarity of the transistor |
| Current - Collector (Ic) (Max) | 20 A | Maximum allowable collector current |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | Maximum voltage from collector to emitter |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 4A, 20A | Maximum collector-emitter saturation voltage |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 10A, 2V | Minimum current gain under specified conditions |
| Power - Max | 5 W | Maximum dissipated power |
| Operating Temperature | -65°C ~ 200°C (TJ) | Junction temperature range |
| Mounting Type | Through Hole | Installation method |
| Package / Case | TO-204AA, TO-3 | Mechanical package |
| RoHS/REACH Status | RoHS non-compliant, REACH Unaffected | Environmental compliance |
| Product Status | Active | Production and availability status |
Substitute Part Grouping Explanation
Substitute parts for the 2N5303 are identified by matching key electrical and mechanical parameters in the transistors, bipolar (BJT) category. Criteria strictly include transistor type (NPN), maximum collector current, collector-emitter breakdown voltage, package style (TO-204AA/TO-3), mounting type, and junction temperature range. RoHS and REACH compliance, product status (active or obsolete), and inventory level are also considered essential to ensure suitability as alternatives.
Parameter Comparison
| Parameter | 2N5303 (Microchip Technology) | 2N5038G (onsemi) | 2N5885G (onsemi) |
|---|---|---|---|
| Transistor Type | NPN | NPN | NPN |
| Current - Collector (Ic) (Max) | 20 A | 20 A | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 90 V | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 4A, 20A | 2.5V @ 5A, 20A | 4V @ 6.25A, 25A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 10A, 2V | 20 @ 12A, 5V | 20 @ 10A, 4V |
| Power - Max | 5 W | 140 W | 200 W |
| Operating Temperature | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-204AA, TO-3 | TO-204AA, TO-3 | TO-204AA, TO-3 |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active | Obsolete |
Engineering Selection Recommendations
Substitute selection considers product status and compliance parameters. 2N5038G is active and ROHS3 compliant, making it suitable for designs requiring ongoing availability and environmental conformity. 2N5885G is obsolete but is ROHS3 compliant and shares category, package, and the NPN configuration. The original 2N5303 is active but RoHS non-compliant. Choose substitutes based on required product status and compliance with RoHS and REACH certifications, as provided.
Frequently Asked Questions (FAQ)
Q: Which key parameters must match for a BJT NPN transistor substitution?
A: Transistor type, collector current rating, collector-emitter breakdown voltage, package/case style, mounting type, and operating temperature range are required parameters for compatibility.
Q: Does package type affect substitution compatibility?
A: Yes, the TO-204AA (TO-3) through-hole package ensures physical and thermal compatibility with the original design.
Q: How should RoHS and product status influence substitute selection?
A: For designs requiring environmental compliance, select parts marked as ROHS3 compliant. Also, prefer substitutes with an "active" product status for long-term availability.
Q: Can a substitute with higher collector current and power dissipation be used?
A: Substitute parts with equal or higher collector current rating and power dissipation are compatible within specified category parameters.
Q: Is replacement affected by differences in collector-emitter breakdown voltage?
A: Ensure the substitute's collector-emitter breakdown voltage meets or exceeds the application's requirements based on allowed parameters.
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