2N5302G Equivalent & Substitute Parts

Part Overview

The 2N5302G is an NPN bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 30 A maximum collector current in a TO-204 (TO-3) through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The 2N5302G delivers 200 W maximum power dissipation and operates across a temperature range of -65°C to 200°C.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	30	A
Power - Max	200	W
Frequency - Transition	2	MHz
Operating Temperature	-65 to 200	°C
Package / Case	TO-204AA, TO-3	—
Mounting Type	Through Hole	—
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 15A, 2V	—
Vce Saturation (Max) @ Ib, Ic	3V @ 6A, 30A	—

Substitute Part Grouping Explanation

Substitution eligibility for the 2N5302G is determined by the following critical parameters: transistor type (NPN), package compatibility (TO-204/TO-3 through-hole), maximum collector current (30 A), collector-emitter breakdown voltage (60 V minimum), maximum power dissipation (200 W minimum), and operating temperature range (-65°C to 200°C). Parts meeting these specifications are classified as direct substitutes. Parts exceeding the voltage or power ratings are considered upgrades and remain compatible. Parts with reduced current capacity, voltage rating, or power dissipation are classified as downgrades and are not suitable substitutes.

Parameter Comparison

Parameter	2N5302G (onsemi)	MJ802G (onsemi)	2N5039 (Microchip)	2N5302 (Microchip)
Transistor Type	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	60 V	90 V	75 V	60 V
Current - Collector (Ic) (Max)	30 A	30 A	20 A	30 A
Power - Max	200 W	200 W	140 W	5 W
Frequency - Transition	2 MHz	2 MHz	—	—
Operating Temperature	-65 to 200°C	-65 to 200°C	-65 to 200°C	-65 to 200°C
Package / Case	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 15A, 2V	25 @ 7.5A, 2V	30 @ 2A, 5V	15 @ 15A, 2V
Vce Saturation (Max) @ Ib, Ic	3V @ 6A, 30A	800mV @ 750mA, 7.5A	2.5V @ 5A, 20A	3V @ 6A, 30A
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS non-compliant	RoHS non-compliant

Engineering Selection Recommendations

MJ802G (onsemi) is the primary substitute for the 2N5302G. Both devices are manufactured by onsemi, share identical current and power ratings (30 A, 200 W), operate across the same temperature range (-65°C to 200°C), and use the same TO-204/TO-3 package. The MJ802G provides a higher collector-emitter breakdown voltage (90 V versus 60 V), making it suitable for applications requiring additional voltage margin. The MJ802G is active in production and ROHS3 compliant, ensuring long-term availability and regulatory compliance.

2N5302 (Microchip) is a direct electrical equivalent with matching voltage (60 V) and current (30 A) specifications, identical saturation characteristics, and the same operating temperature range. However, the Microchip variant is rated for only 5 W maximum power dissipation compared to the 200 W rating of the 2N5302G, making it unsuitable for high-power applications. This part is not RoHS compliant.

2N5039 (Microchip) is a downgrade substitute. While it maintains the same package, temperature range, and NPN configuration, it is limited to 20 A maximum collector current and 140 W power dissipation, both below the 2N5302G specifications. This part is not RoHS compliant and should be used only in applications with reduced current and power requirements.

Frequently Asked Questions (FAQ)

Q: Can the MJ802G directly replace the 2N5302G in all applications?

A: Yes. The MJ802G meets or exceeds all electrical specifications of the 2N5302G, including current (30 A), power (200 W), and temperature range (-65°C to 200°C). The higher voltage rating (90 V versus 60 V) provides additional design margin without compromising compatibility.

Q: Why is the 2N5302 (Microchip) not recommended as a primary substitute?

A: The Microchip 2N5302 has a maximum power rating of only 5 W, significantly below the 200 W specification of the 2N5302G. This makes it unsuitable for applications requiring the full power dissipation capability of the original part.

Q: Is the 2N5039 suitable for high-current applications?

A: No. The 2N5039 is limited to 20 A maximum collector current, compared to the 30 A rating of the 2N5302G. It is suitable only for applications with reduced current requirements.

Q: Are all substitute parts available in the same TO-204/TO-3 package?

A: Yes. All substitute parts listed use the TO-204AA or TO-3 through-hole package, ensuring mechanical and thermal compatibility with the original 2N5302G.

Q: What is the compliance status of available substitutes?

A: The MJ802G (onsemi) is ROHS3 compliant and active in production. The 2N5302 and 2N5039 (Microchip) are not RoHS compliant. For applications requiring RoHS compliance, the MJ802G is the recommended choice.

Q: Do all substitutes operate across the same temperature range?

A: Yes. All substitute parts operate from -65°C to 200°C, matching the operating temperature range of the 2N5302G.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message