Request Quote
(Ships tomorrow)
2N5210_D81Z Equivalent & Substitute Parts
Part Overview
The 2N5210_D81Z is an NPN bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 100 mA maximum collector current. This device is packaged in a TO-92-3 through-hole configuration and is rated for 625 mW maximum power dissipation. The 2N5210_D81Z is classified as obsolete, making identification of active equivalent parts essential for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Current - Collector (Ic) (Max) | 100 | mA |
| Power - Max | 625 | mW |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 | — |
| Operating Temperature Range | -55 to 150 | °C |
Substitute Part Grouping Explanation
Substitution of the 2N5210_D81Z is determined by strict equivalence across the following electrical and mechanical parameters:
Electrical Equivalence Criteria:
- Transistor type: NPN
- Maximum collector-emitter breakdown voltage: 50 V (minimum)
- Maximum collector current: 100 mA (minimum)
- Maximum power dissipation: 625 mW (minimum)
Mechanical Equivalence Criteria:
- Mounting type: Through Hole
- Package type: TO-92-3
The 2N5232A PBFREE meets all substitution criteria. Both devices share identical voltage and current ratings, power dissipation capability, and package configuration. The substitute part is manufactured by Central Semiconductor Corp and maintains active product status, ensuring long-term availability and supply chain stability.
Parameter Comparison
| Parameter | 2N5210_D81Z (onsemi) | 2N5232A PBFREE (Central Semiconductor) | Unit |
|---|---|---|---|
| Transistor Type | NPN | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 50 | 50 | V |
| Current - Collector (Ic) (Max) | 100 | 100 | mA |
| Vce Saturation (Max) @ Ib, Ic | 700 mV @ 1 mA, 10 mA | 125 mV @ 1 mA, 10 mA | mV |
| Current - Collector Cutoff (Max) | 50 | 30 | nA |
| DC Current Gain (hFE) (Min) | 200 @ 100 µA, 5 V | 250 @ 2 mA, 5 V | — |
| Power - Max | 625 | 625 | mW |
| Operating Temperature Range | -55 to 150 | -65 to 150 | °C |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | TO-92-3 | TO-92-3 | — |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
The 2N5232A PBFREE is a direct functional equivalent to the 2N5210_D81Z. Both devices meet identical electrical specifications for voltage, current, and power ratings. The 2N5232A PBFREE offers the following advantages:
Product Status: The 2N5232A PBFREE maintains active product status, ensuring continued availability and manufacturing support. The 2N5210_D81Z is obsolete and subject to supply discontinuation.
Compliance: The 2N5232A PBFREE is RoHS3 compliant and carries PBFREE designation, meeting current environmental and regulatory requirements. Both parts are REACH unaffected and classified under ECCN EAR99.
Thermal Performance: The 2N5232A PBFREE extends the lower operating temperature limit to -65°C, providing enhanced performance in cold-temperature applications compared to the -55°C minimum of the 2N5210_D81Z.
Saturation Characteristics: The 2N5232A PBFREE exhibits lower saturation voltage (125 mV versus 700 mV at specified conditions), resulting in reduced power dissipation during saturation operation.
Frequently Asked Questions (FAQ)
Q: Can the 2N5232A PBFREE be used as a direct replacement for the 2N5210_D81Z in existing designs?
A: Yes. Both devices are NPN transistors with identical maximum ratings for collector-emitter breakdown voltage (50 V), collector current (100 mA), and power dissipation (625 mW). Both use the TO-92-3 through-hole package. Pin configuration and functional operation are equivalent.
Q: What are the differences between these two parts?
A: The primary differences are product status and saturation characteristics. The 2N5210_D81Z is obsolete; the 2N5232A PBFREE is active. The 2N5232A PBFREE has lower saturation voltage (125 mV versus 700 mV), lower collector cutoff current (30 nA versus 50 nA), and a wider operating temperature range (-65°C to 150°C versus -55°C to 150°C).
Q: Are there any package compatibility issues?
A: No. Both parts use the TO-92-3 package with identical lead configuration and spacing. Physical installation and PCB layout are interchangeable.
Q: Does the 2N5232A PBFREE meet current environmental standards?
A: Yes. The 2N5232A PBFREE is RoHS3 compliant and carries PBFREE certification, meeting current environmental regulations. Both parts are REACH unaffected.
Q: What is the significance of the lower saturation voltage in the 2N5232A PBFREE?
A: Lower saturation voltage reduces power dissipation when the transistor operates in saturation mode. This results in lower junction temperature and improved thermal performance in switching applications.
Q: Can I use the 2N5210_D81Z if the 2N5232A PBFREE is unavailable?
A: The 2N5210_D81Z is obsolete and not recommended for new designs or long-term procurement. The 2N5232A PBFREE should be used for all applications requiring an active, supported component.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts

