2N5195 SL H Equivalent & Substitute Parts

Part Overview

The 2N5195 SL H is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 4 A, collector-emitter breakdown voltage of 80 V, and maximum power dissipation of 40 W in a Through Hole TO-126 package.

The 2N5195 SL H is classified as an obsolete product. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and production requirements for legacy equipment and systems utilizing this transistor.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	4	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 1A, 4A	V
Current - Collector Cutoff (Max)	1	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1.5A, 2V	—
Power - Max	40	W
Frequency - Transition	2	MHz
Operating Temperature Range	-65 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—

Substitute Part Grouping Explanation

Substitution of the 2N5195 SL H is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Parameters (Must Match):

Transistor polarity: PNP
Maximum collector current: 4 A
Collector-emitter breakdown voltage: 80 V
Vce saturation: 1.4 V @ 1A, 4A
Collector cutoff current: 1 mA
DC current gain (hFE): 20 (minimum) @ 1.5A, 2V
Maximum power dissipation: 40 W
Transition frequency: 2 MHz
Operating temperature range: -65°C to 150°C

Mechanical Parameters (Must Match):

Mounting type: Through Hole
Package designation: TO-126-3

Substitute parts must satisfy all listed electrical specifications and physical package requirements to ensure functional and mechanical compatibility in the original application circuit.

Parameter Comparison

Parameter	2N5195 SL H (Central Semiconductor)	2N5195G (onsemi)
Manufacturer	Central Semiconductor Corp	onsemi
Product Status	Obsolete	Active
Transistor Type	PNP	PNP
Current - Collector (Ic) (Max)	4 A	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 1A, 4A	1.4V @ 1A, 4A
Current - Collector Cutoff (Max)	1 mA	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1.5A, 2V	20 @ 1.5A, 2V
Power - Max	40 W	40 W
Frequency - Transition	2 MHz	2 MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-126-3	TO-126-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99
HTSUS Code	8541.29.0095	8541.29.0095

Engineering Selection Recommendations

The 2N5195G manufactured by onsemi is a direct electrical and mechanical equivalent to the 2N5195 SL H. Both devices share identical electrical specifications across all critical parameters: collector current, breakdown voltage, saturation characteristics, current gain, power rating, and frequency response. Both operate across the same temperature range and utilize the same TO-126-3 package for Through Hole mounting.

The 2N5195G holds Active product status, ensuring ongoing availability and manufacturing support, whereas the 2N5195 SL H is classified as Obsolete. Both parts maintain ROHS3 compliance and REACH Unaffected status, satisfying equivalent regulatory requirements.

Selection of the 2N5195G is appropriate for applications requiring replacement of the obsolete 2N5195 SL H without circuit modification or performance degradation.

Frequently Asked Questions (FAQ)

Q: Can the 2N5195G directly replace the 2N5195 SL H in existing circuits?

A: Yes. The 2N5195G is electrically and mechanically equivalent. All electrical parameters, including collector current, breakdown voltage, saturation characteristics, and current gain, are identical. Both devices use the TO-126-3 Through Hole package. No circuit modifications are required.

Q: What is the primary reason to substitute the 2N5195 SL H?

A: The 2N5195 SL H is classified as Obsolete. The 2N5195G is an Active product with ongoing manufacturer support and availability, making it the appropriate choice for new designs and legacy system maintenance.

Q: Are there any compliance differences between these parts?

A: No. Both the 2N5195 SL H and 2N5195G are ROHS3 Compliant and REACH Unaffected. Both carry the same ECCN (EAR99) and HTSUS code (8541.29.0095).

Q: Does the package type differ between these transistors?

A: No. Both devices are packaged in TO-126-3 for Through Hole mounting. Physical dimensions and pin configuration are identical, ensuring compatibility with existing PCB layouts and socket designs.

Q: What electrical parameters determine substitution eligibility?

A: Substitution is determined by matching: transistor polarity (PNP), maximum collector current (4 A), collector-emitter breakdown voltage (80 V), saturation voltage (1.4 V @ 1A, 4A), collector cutoff current (1 mA), DC current gain (20 minimum @ 1.5A, 2V), maximum power dissipation (40 W), transition frequency (2 MHz), and operating temperature range (-65°C to 150°C).

Q: Is the 2N5195G the only available substitute?

A: Based on the provided substitute list, the 2N5195G is the documented equivalent. Substitution eligibility is strictly limited to parts matching all specified electrical and mechanical parameters.

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