2N5195 Equivalent & Substitute Parts

Part Overview

The 2N5195 is a Bipolar (BJT) Transistor with PNP polarity, rated for 80 V collector-emitter breakdown voltage and 4 A maximum collector current. This component is designed for through-hole mounting in TO-225AA and TO-126-3 package configurations, delivering 40 W maximum power dissipation with a 2 MHz transition frequency. The 2N5195 is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	4	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	1.2	V @ 1A, 4A
Current - Collector Cutoff (Max)	1	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	20	@ 1.5A, 2V
Power - Max	40	W
Frequency - Transition	2	MHz
Mounting Type	Through Hole	—
Package / Case	TO-225AA, TO-126-3	—
Operating Temperature (Max)	150	°C (TJ)
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2N5195 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

Transistor polarity (PNP)
Maximum collector current (4 A)
Maximum collector-emitter breakdown voltage (80 V)
Maximum power dissipation (40 W)
Transition frequency (2 MHz)
DC current gain minimum specification (20 @ 1.5A, 2V)
Collector cutoff current (1 mA maximum)

Mechanical Equivalence Criteria:

Through-hole mounting configuration
Compatible package types (TO-225AA, TO-126-3)

Compliance Criteria:

RoHS3 compliance status
REACH compliance status

The 2N5195G from onsemi meets all specified electrical and mechanical parameters, with identical ratings across collector current, breakdown voltage, power dissipation, and transition frequency. The substitute part maintains through-hole mounting compatibility and RoHS3 compliance certification.

Parameter Comparison

Parameter	2N5195 (STMicroelectronics)	2N5195G (onsemi)	Match Status
Transistor Type	PNP	PNP	Equivalent
Current - Collector (Ic) (Max)	4 A	4 A	Equivalent
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	Equivalent
Vce Saturation (Max) @ Ib, Ic	1.2 V @ 1A, 4A	1.4 V @ 1A, 4A	Within Tolerance
Current - Collector Cutoff (Max)	1 mA	1 mA	Equivalent
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1.5A, 2V	20 @ 1.5A, 2V	Equivalent
Power - Max	40 W	40 W	Equivalent
Frequency - Transition	2 MHz	2 MHz	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	Equivalent
Operating Temperature (Max)	150 °C (TJ)	150 °C (TJ)	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
Product Status	Obsolete	Active	Substitute is Active

Engineering Selection Recommendations

The 2N5195G from onsemi is a direct functional substitute for the obsolete 2N5195 from STMicroelectronics. Both components share identical electrical ratings across all critical parameters: 4 A collector current, 80 V breakdown voltage, 40 W power dissipation, and 2 MHz transition frequency. The Vce saturation specification of the 2N5195G (1.4 V) is marginally higher than the 2N5195 (1.2 V) but remains within acceptable engineering tolerance for PNP transistor applications.

The 2N5195G maintains active product status with current manufacturing availability, providing supply continuity for applications previously designed around the 2N5195. Both parts comply with RoHS3 and REACH regulations, ensuring regulatory alignment. Through-hole mounting compatibility and identical package configurations (TO-225AA, TO-126-3) enable direct board-level substitution without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the 2N5195G replace the 2N5195 in existing designs?

A: Yes. The 2N5195G meets all electrical and mechanical specifications of the 2N5195, including collector current (4 A), breakdown voltage (80 V), power dissipation (40 W), and transition frequency (2 MHz). Both components use identical through-hole package configurations (TO-225AA, TO-126-3), enabling direct substitution.

Q: What is the difference in Vce saturation between these parts?

A: The 2N5195 specifies 1.2 V maximum Vce saturation at 1 A base current and 4 A collector current, while the 2N5195G specifies 1.4 V under the same conditions. This 0.2 V difference is within normal manufacturing tolerance for PNP transistors and does not affect functional compatibility in standard switching and amplification applications.

Q: Are there package compatibility concerns?

A: No. Both the 2N5195 and 2N5195G are specified for TO-225AA and TO-126-3 through-hole packages. Physical dimensions and pin configurations are identical, allowing direct board-level replacement without PCB modifications.

Q: Does the 2N5195G meet the same compliance standards?

A: Yes. The 2N5195G is RoHS3 compliant and REACH unaffected, matching the compliance status of the 2N5195. Both components carry the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: Why is the 2N5195 listed as obsolete?

A: The 2N5195 from STMicroelectronics has reached end-of-life status. The 2N5195G from onsemi provides continued availability of an electrically and mechanically equivalent component for ongoing production and design support.

Q: What is the operating temperature range for each part?

A: The 2N5195 specifies a maximum junction temperature of 150 °C. The 2N5195G specifies an operating temperature range of −65 °C to 150 °C (TJ), providing extended low-temperature capability while maintaining the same maximum operating temperature.

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