2N5193 Equivalent & Substitute Parts

Part Overview

The 2N5193 is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, designed for general-purpose switching and amplification applications. It features a maximum collector current of 4 A, collector-emitter breakdown voltage of 40 V, and maximum power dissipation of 40 W in a Through Hole TO-126 package.

The 2N5193 is classified as an obsolete product. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production or repair requirements for legacy systems utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	4	A
Voltage - Collector Emitter Breakdown (Max)	40	V
Power - Max	40	W
Operating Temperature Range	-65 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—

Substitute Part Grouping Explanation

Substitution of the 2N5193 is determined by strict equivalence of the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor polarity: PNP
Maximum collector current (Ic): 4 A minimum
Maximum collector-emitter breakdown voltage (VCEO): 40 V minimum
Maximum power dissipation: 40 W minimum
Package type: TO-126 Through Hole configuration
Operating temperature range: -65°C to 150°C minimum

The MJE371G meets all critical substitution criteria. Both devices share identical maximum ratings for collector current, breakdown voltage, and power dissipation. Both are housed in the TO-126-3 package and support the same operating temperature range. The MJE371G is manufactured by onsemi and maintains active product status, providing superior supply chain availability compared to the obsolete 2N5193.

Parameter Comparison

Parameter	2N5193 (Central Semiconductor)	MJE371G (onsemi)	Match Status
Transistor Type	PNP	PNP	Equivalent
Current - Collector (Ic) (Max)	4 A	4 A	Equivalent
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	Equivalent
Power - Max	40 W	40 W	Equivalent
Operating Temperature Range	-65°C to 150°C	-65°C to 150°C	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Package / Case	TO-126-3	TO-126-3	Equivalent
Product Status	Obsolete	Active	Substitute Advantage
RoHS Compliance	Non-compliant	ROHS3 Compliant	Substitute Advantage

Engineering Selection Recommendations

The MJE371G is a direct functional substitute for the 2N5193 based on electrical and mechanical parameter equivalence. Selection of the MJE371G provides the following advantages:

Product Status: The MJE371G maintains active manufacturing status with onsemi, ensuring long-term availability and supply chain stability. The 2N5193 is obsolete and subject to inventory depletion.

Regulatory Compliance: The MJE371G is ROHS3 compliant, meeting current environmental and regulatory requirements for electronic components. The 2N5193 is non-compliant with RoHS directives.

Inventory Availability: The MJE371G is available in significantly higher quantities (3117 pcs) compared to the 2N5193 (930 pcs), supporting both immediate and sustained production requirements.

Both devices share identical REACH and ECCN classifications (REACH Unaffected, EAR99), indicating equivalent regulatory treatment for export and supply chain purposes.

Frequently Asked Questions (FAQ)

Q: Can the MJE371G be used as a direct replacement for the 2N5193 in existing circuit designs?

A: Yes. The MJE371G is electrically and mechanically equivalent to the 2N5193. Both devices feature identical maximum ratings for collector current (4 A), collector-emitter breakdown voltage (40 V), and power dissipation (40 W). Both are packaged in TO-126-3 and support the same operating temperature range (-65°C to 150°C). Pin configuration and package dimensions are identical, enabling direct PCB substitution without circuit modification.

Q: What are the differences in DC current gain (hFE) between the 2N5193 and MJE371G?

A: The 2N5193 specifies a minimum hFE of 25 at Ic = 1.5 A and Vce = 2 V. The MJE371G specifies a minimum hFE of 40 at Ic = 1 A and Vce = 1 V. These measurements are taken at different operating points and are not directly comparable. Circuit designs should be evaluated based on the specific bias conditions and gain requirements of the application.

Q: Are there package or pinout differences between these devices?

A: No. Both the 2N5193 and MJE371G use the TO-126-3 package with identical pinout and mechanical dimensions. Through Hole mounting is supported by both devices. No PCB layout modifications are required for substitution.

Q: Why should the MJE371G be selected over the 2N5193?

A: The MJE371G is recommended for new designs and ongoing production due to active product status, superior supply chain availability, and ROHS3 compliance. The 2N5193 is obsolete and subject to inventory constraints. Both devices meet identical electrical specifications for the intended application.

Q: What is the significance of RoHS compliance in component selection?

A: RoHS3 compliance indicates that the MJE371G meets current environmental and regulatory requirements for lead-free manufacturing and restricted substance limitations. The 2N5193 is non-compliant with RoHS directives. For applications subject to environmental regulations or customer requirements, the MJE371G is the appropriate selection.

Q: Are there differences in saturation voltage (Vce sat) between these devices?

A: The 2N5193 specifies Vce saturation of 1.4 V at Ib = 1 A and Ic = 4 A. The MJE371G does not provide a specified Vce saturation value in the available data. Circuit designs dependent on specific saturation voltage characteristics should be evaluated for compatibility with the MJE371G performance envelope.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message