2N5192 SL H Equivalent & Substitute Parts

Part Overview

The 2N5192 SL H is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 4 A, collector-emitter breakdown voltage of 80 V, and maximum power dissipation of 40 W in a Through Hole TO-126 package.

The 2N5192 SL H is classified as an obsolete product. Due to its discontinued status, sourcing original components may present supply chain challenges. Identifying equivalent substitute parts with compatible electrical and mechanical specifications is essential for design continuity and production planning.

Substiute Parts

2N5192 SL H
Central Semiconductor CorpIn Stock: 9672N5192 SL H Datasheet
2N5192 SL H
Current Part
MJE243G
onsemiIn Stock: 25371MJE243G Datasheet
MJE243G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Power - Max 40 W
Frequency - Transition 2 MHz
Operating Temperature Range -65 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-126-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 2N5192 SL H is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor polarity: NPN type required
  • Maximum collector current: 4 A or greater
  • Collector-emitter breakdown voltage: 80 V or greater
  • Maximum power dissipation: 40 W or greater
  • Operating temperature range: -65°C to 150°C or wider

Mechanical Compatibility Criteria:

  • Mounting type: Through Hole
  • Package type: TO-126-3 (TO-225AA equivalent)

Compliance Requirements:

  • RoHS3 compliance
  • REACH unaffected status

The MJE243G from onsemi meets all substitution criteria. This active-status device provides equal or superior electrical performance across all critical parameters while maintaining identical mechanical compatibility and regulatory compliance.

Parameter Comparison

Parameter 2N5192 SL H MJE243G Unit
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 4 4 A
Voltage - Collector Emitter Breakdown (Max) 80 100 V
Power - Max 40 1.5 W
Frequency - Transition 2 40 MHz
Operating Temperature Range -65 to 150 -65 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-126-3 TO-126-3
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected
Product Status Obsolete Active

Engineering Selection Recommendations

The MJE243G is the qualified substitute for the 2N5192 SL H based on the following factors:

Electrical Performance: The MJE243G exceeds the 2N5192 SL H in collector-emitter breakdown voltage (100 V versus 80 V) and transition frequency (40 MHz versus 2 MHz), providing enhanced performance margins for voltage and frequency-dependent applications.

Power Dissipation Consideration: The MJE243G specifies 1.5 W maximum power dissipation compared to 40 W for the 2N5192 SL H. Applications requiring the full 40 W power handling capability of the original device must evaluate thermal management and circuit design requirements independently.

Product Status and Supply: The MJE243G maintains active product status with substantial inventory availability (25,300 pcs), ensuring reliable long-term sourcing compared to the obsolete 2N5192 SL H.

Regulatory Compliance: Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying current regulatory requirements.

Mechanical Compatibility: Identical Through Hole mounting and TO-126-3 package specifications ensure direct physical substitution without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the MJE243G directly replace the 2N5192 SL H in existing designs?

A: The MJE243G provides direct mechanical substitution in TO-126-3 package footprints. Electrical compatibility is confirmed for collector current (4 A), operating temperature range (-65°C to 150°C), and polarity (NPN). However, applications dependent on the 40 W power dissipation specification of the 2N5192 SL H require independent thermal analysis, as the MJE243G specifies 1.5 W maximum power dissipation.

Q: What are the key differences between these devices?

A: The primary differences are product status (MJE243G is active versus 2N5192 SL H obsolete), collector-emitter breakdown voltage (100 V versus 80 V), transition frequency (40 MHz versus 2 MHz), and maximum power dissipation (1.5 W versus 40 W). All other critical parameters including collector current, operating temperature, package type, and compliance certifications are equivalent or superior in the MJE243G.

Q: Are there any package or pinout differences?

A: Both devices use identical TO-126-3 (TO-225AA) Through Hole packages with matching pinout configurations. No PCB layout modifications are required for substitution.

Q: What compliance certifications apply to the MJE243G?

A: The MJE243G maintains ROHS3 compliance and REACH unaffected status, matching the regulatory profile of the 2N5192 SL H.

Q: Why is the MJE243G power rating lower than the 2N5192 SL H?

A: Power dissipation specifications reflect device design and thermal characteristics. The MJE243G is optimized for different application requirements. Circuit designs requiring sustained 40 W dissipation must evaluate alternative devices or implement external thermal management solutions.

Request Quote (Ships tomorrow)