2N5192R Equivalent & Substitute Parts

Part Overview

The 2N5192R is a through-hole NPN bipolar junction transistor manufactured by Central Semiconductor Corp, rated for 80 V collector-emitter breakdown voltage and 4 A maximum collector current. This device is classified as obsolete, which necessitates identification of active equivalent components for continued circuit implementation. The 2N5192R operates at a transition frequency of 2 MHz with a maximum power dissipation of 40 W and is housed in a TO-126 package.

Substiute Parts

2N5192R

Central Semiconductor CorpIn Stock: 7452N5192R Datasheet

Current PartRFQ

2N5192G

onsemiIn Stock: 103462N5192G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N5192R is determined by electrical and mechanical parameter equivalence. The following criteria establish valid substitution:

Electrical Parameters (Must Match):

• Transistor Type: NPN
• Maximum Collector Current (Ic): 4 A
• Collector-Emitter Breakdown Voltage: 80 V
• Vce Saturation: 1.4 V @ 1 A, 4 A
• Collector Cutoff Current: 1 mA
• DC Current Gain (hFE): 20 @ 1.5 A, 2 V
• Maximum Power Dissipation: 40 W
• Transition Frequency: 2 MHz
• Operating Temperature Range: -65°C to 150°C

Mechanical Parameters (Must Match):

• Mounting Type: Through Hole
• Package: TO-126-3

The 2N5192G from onsemi satisfies all electrical and mechanical parameters specified for the 2N5192R and is classified as an active product with current manufacturing status.

Parameter Comparison

Engineering Selection Recommendations

The 2N5192G is the direct equivalent for the obsolete 2N5192R. The 2N5192G is manufactured by onsemi and maintains active product status with current production availability. The 2N5192G is ROHS3 compliant, whereas the 2N5192R product status is obsolete. Both devices share identical electrical ratings and mechanical packaging specifications.

Selection of the 2N5192G eliminates obsolescence risk and ensures access to current manufacturing inventory. The 2N5192G is suitable for direct pin-for-pin replacement in existing circuit designs without modification to PCB layout or schematic topology.

Frequently Asked Questions (FAQ)

Q: Can the 2N5192G replace the 2N5192R in existing designs?

A: Yes. The 2N5192G is electrically and mechanically equivalent to the 2N5192R. All electrical parameters, including collector current, breakdown voltage, saturation voltage, current gain, power rating, and frequency response, are identical. Both devices use the TO-126-3 package with identical pinout and mechanical dimensions.

Q: What is the primary reason to substitute the 2N5192R?

A: The 2N5192R is classified as obsolete. The 2N5192G is an active product with current manufacturing status and available inventory, ensuring long-term supply chain continuity.

Q: Are there any compliance differences between the 2N5192R and 2N5192G?

A: The 2N5192G is ROHS3 compliant. Both devices are REACH unaffected and carry EAR99 ECCN classification. Both share identical HTSUS code 8541.29.0095.

Q: Is PCB modification required when substituting the 2N5192G for the 2N5192R?

A: No. Both devices are housed in the TO-126-3 package with identical pinout and mechanical footprint. Direct substitution on existing PCBs is possible without layout modification.

Q: What are the key electrical parameters that define substitution compatibility?

A: Substitution compatibility is determined by matching transistor type (NPN), maximum collector current (4 A), collector-emitter breakdown voltage (80 V), saturation voltage (1.4 V @ 1 A, 4 A), collector cutoff current (1 mA), DC current gain (20 @ 1.5 A, 2 V), maximum power dissipation (40 W), transition frequency (2 MHz), and operating temperature range (-65°C to 150°C).