2N5191 NPN Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The 2N5191 is an NPN bipolar junction transistor (BJT) rated for 60 V collector-emitter breakdown voltage and 4 A maximum collector current, with a maximum power dissipation of 40 W. Manufactured by STMicroelectronics, this component is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Suitable alternatives maintain the core electrical specifications while offering active product status and improved availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	4	A
Power - Max	40	W
Frequency - Transition	2	MHz
Vce Saturation (Max) @ Ib, Ic	1.4V @ 1A, 4A	V
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1.5A, 2V	—
Operating Temperature (Max)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-225AA, TO-126-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2N5191 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60 V minimum
Current - Collector (Ic) (Max): 4 A minimum
Power - Max: 40 W minimum
Mounting Type: Through Hole
Package / Case: TO-225AA or TO-126-3 compatible
RoHS Status: ROHS3 Compliant

Direct Equivalents maintain all primary parameters within specification limits and are suitable for direct replacement in existing designs.

Similar Parts meet the core voltage and current requirements but may differ in secondary parameters such as transition frequency, saturation voltage, or power dissipation. These parts are suitable for applications where the specific secondary parameter variation does not impact circuit performance.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) [A]	Vce Breakdown (Max) [V]	Power (Max) [W]	Frequency [MHz]	Vce Sat (Max) [V]	hFE (Min)	Package
2N5191	STMicroelectronics	Obsolete	4	60	40	2	1.4 @ 1A, 4A	25 @ 1.5A, 2V	TO-126-3
2N5191G	onsemi	Active	4	60	40	2	1.4 @ 1A, 4A	25 @ 1.5A, 2V	TO-126
BD439G	onsemi	Active	4	60	36	3	0.8 @ 0.3A, 3A	40 @ 0.5A, 1V	TO-126
2N5190G	onsemi	Active	4	40	40	2	1.4 @ 1A, 4A	25 @ 1.5A, 2V	TO-126
BD787G	onsemi	Active	4	60	15	50	2.5 @ 0.8A, 4A	40 @ 0.2A, 3V	TO-126
KSD1691GS	onsemi	Active	5	60	1.3	—	0.3 @ 0.2A, 2A	200 @ 2A, 1V	TO-126-3
KSD1691YS	onsemi	Active	5	60	1.3	—	0.3 @ 0.2A, 2A	160 @ 2A, 1V	TO-126-3
KSD1691YSTU	onsemi	Active	5	60	1.3	—	0.3 @ 0.2A, 2A	160 @ 2A, 1V	TO-126-3

Engineering Selection Recommendations

Direct Replacement (Preferred): The 2N5191G (onsemi) is the direct equivalent of the 2N5191. It maintains identical electrical specifications across all primary parameters and is classified as an active product. This part is suitable for direct substitution in all applications where the 2N5191 was originally specified. The 2N5191G carries ROHS3 compliance and REACH unaffected status, matching the original part's regulatory standing.

Functional Equivalents (Voltage and Current Compatible): The BD439G meets the 60 V and 4 A requirements with active product status. It exhibits improved transition frequency (3 MHz versus 2 MHz) and lower saturation voltage (0.8 V versus 1.4 V at specified test conditions), resulting in reduced power dissipation in switching applications. Power rating is 36 W, which is within acceptable tolerance for most applications designed for the 40 W 2N5191. This part is suitable for designs where improved switching performance is beneficial.

Voltage-Reduced Alternative: The 2N5190G is rated for 40 V collector-emitter breakdown voltage instead of 60 V. This part is suitable only for applications where the circuit design operates at voltages not exceeding 40 V. It maintains identical current, power, and frequency specifications to the original 2N5191.

High-Frequency Alternative: The BD787G is rated for 60 V and 4 A but features a transition frequency of 50 MHz and reduced power dissipation (15 W). This part is suitable for high-frequency switching applications where the original 2 MHz specification is insufficient. The reduced power rating limits its use to lower-power circuits.

Higher Current Alternatives: The KSD1691GS, KSD1691YS, and KSD1691YSTU are rated for 5 A collector current at 60 V, exceeding the 2N5191 specification. However, these parts are designed for low-power applications with maximum power dissipation of 1.3 W, making them unsuitable for the 40 W power envelope of the original part. These alternatives are not recommended for direct substitution in power applications.

Frequently Asked Questions (FAQ)

Q: Can the 2N5191G be used as a direct replacement for the 2N5191?

A: Yes. The 2N5191G is manufactured by onsemi and maintains identical electrical specifications for collector current (4 A), collector-emitter breakdown voltage (60 V), power dissipation (40 W), transition frequency (2 MHz), and saturation voltage. Both parts use TO-126 packaging and are ROHS3 compliant. The 2N5191G is active product status, addressing the obsolescence of the original STMicroelectronics part.

Q: What is the difference between BD439G and 2N5191G?

A: Both parts are rated for 60 V and 4 A. The BD439G has a higher transition frequency (3 MHz versus 2 MHz), lower saturation voltage (0.8 V versus 1.4 V at specified test conditions), and slightly lower power rating (36 W versus 40 W). The BD439G is suitable for applications where improved switching performance is required, but the reduced power rating must be verified against circuit requirements.

Q: Can the 2N5190G replace the 2N5191?

A: The 2N5190G is suitable only for applications where the circuit operates at voltages not exceeding 40 V. It is not suitable for circuits designed for the full 60 V rating of the 2N5191. All other electrical parameters (current, power, frequency) are identical.

Q: Why are the KSD1691 series parts not recommended as direct substitutes?

A: The KSD1691GS, KSD1691YS, and KSD1691YSTU are designed for low-power applications with maximum power dissipation of 1.3 W. The 2N5191 is rated for 40 W power dissipation. These parts cannot handle the power levels required by circuits designed for the 2N5191 and are not suitable for direct substitution.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference (2N5191G, BD439G, 2N5190G, BD787G, KSD1691GS, KSD1691YS, KSD1691YSTU) are ROHS3 compliant and REACH unaffected, matching the regulatory status of the original 2N5191.

Q: What is the difference between KSD1691GS, KSD1691YS, and KSD1691YSTU?

A: KSD1691GS and KSD1691YS are identical in electrical specifications except for DC current gain (hFE): KSD1691GS has a minimum of 200 at 2A/1V, while KSD1691YS has a minimum of 160 at 2A/1V. The KSD1691YSTU is the tube-packaged version of KSD1691YS with identical electrical specifications. Packaging differs: KSD1691GS and KSD1691YS are supplied in bulk, while KSD1691YSTU is supplied in tube format.

Q: Is the BD787G suitable for the same applications as the 2N5191?

A: The BD787G is suitable only for applications where high-frequency operation (50 MHz) is required and power dissipation does not exceed 15 W. The reduced power rating (15 W versus 40 W) limits its use to low-power circuits. It is not a general-purpose replacement for the 2N5191 in power applications.

Q: What packaging options are available for substitute parts?

A: All substitute parts use through-hole mounting in TO-126 or TO-126-3 packages, compatible with the original 2N5191 TO-225AA/TO-126-3 footprint. KSD1691YSTU is supplied in tube packaging, while other parts are available in bulk packaging.

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