2N5116 JFET P-Channel Transistor Equivalent & Substitute Parts

Part Overview

The 2N5116 is a P-Channel JFET (Junction Field-Effect Transistor) rated for 30 V breakdown voltage with 500 mW power dissipation in a Through Hole TO-18 metal can package. This component is designed for analog switching and amplification applications requiring P-channel depletion-mode operation. The part is currently in active production status with robust inventory availability. Substitute parts are identified to provide design flexibility when the primary manufacturer allocation is constrained or when alternative sourcing is required for supply chain continuity.

Substiute Parts

2N5116

Central Semiconductor CorpIn Stock: 20192N5116 Datasheet

Current PartRFQ

2N5116 TO-18 3L ROHS

Linear Integrated Systems, Inc.In Stock: 16842N5116 TO-18 3L ROHS Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the 2N5116 is determined by strict electrical and mechanical parameter matching within the following criteria:

Critical Matching Parameters:

• FET Type: P-Channel (depletion-mode operation required)
• Voltage - Breakdown (V(BR)GSS): 30 V minimum
• Input Capacitance (Ciss): 25 pF maximum @ 15V
• Resistance - RDS(On): 150 Ohms nominal
• Power - Max: 500 mW minimum
• Package / Case: TO-18 metal can configuration
• Mounting Type: Through Hole

The identified substitute part maintains electrical equivalence across all critical parameters while meeting modern RoHS3 compliance requirements. Operating temperature range variations are acceptable provided the application thermal envelope remains within the substitute part's specified limits.

Parameter Comparison

Engineering Selection Recommendations

Both parts meet ROHS3 compliance and REACH unaffected status, satisfying modern regulatory requirements for electronic component procurement. The substitute part 2N5116 TO-18 3L ROHS from Linear Integrated Systems maintains electrical equivalence across all specified parameters with identical package configuration.

The operating temperature range of the substitute part (-55°C ~ 150°C) is narrower than the primary part (-65°C ~ 200°C). Component selection should account for the application's thermal operating envelope. If the design requires operation below -55°C or above 150°C, the primary part from Central Semiconductor Corp remains the appropriate choice. For standard industrial and commercial temperature ranges, the substitute part provides full functional equivalence.

Both parts are in active production status with confirmed inventory availability, supporting uninterrupted supply chain access.

Frequently Asked Questions (FAQ)

Q: Can the 2N5116 TO-18 3L ROHS substitute directly for the original 2N5116?

A: Yes, for applications operating within the temperature range of -55°C to 150°C. The electrical parameters, package configuration, and compliance certifications are equivalent. If your application requires operation outside this temperature window, the original part is required.

Q: What is the significance of the "TO-18-3" designation in the substitute part number?

A: The TO-18-3 designation specifies a three-lead metal can package in the TO-18 form factor. This is mechanically and electrically compatible with the TO-206AA standard. Both designations refer to the same physical package configuration suitable for Through Hole mounting.

Q: Are there any compliance differences between the two parts?

A: No. Both parts are ROHS3 compliant and REACH unaffected. They meet identical regulatory requirements for modern electronics manufacturing and procurement.

Q: What parameters must remain constant for a valid substitution?

A: The following parameters must match or exceed the original specification: FET Type (P-Channel), Voltage - Breakdown (30 V), Input Capacitance (25 pF maximum), Resistance - RDS(On) (150 Ohms), Power rating (500 mW), and package type (TO-18 metal can Through Hole). Operating temperature range may be narrower if the application permits.

Q: Is the drain current specification (Idss) critical for substitution?

A: The Idss parameter is specified for the primary part (5 mA @ 15 V) but not provided for the substitute part. This does not disqualify the substitute for applications where this parameter is not explicitly required by the circuit design. Consult detailed datasheets if drain current characteristics are critical to circuit performance.