2N5115 JFET P-Channel Transistor: Equivalent & Substitute Parts

Part Overview

The 2N5115 is a P-channel JFET (Junction Field-Effect Transistor) manufactured by Vishay Siliconix in a Through Hole TO-206AA (TO-18) metal can package. This device is classified as obsolete, though 1702 pieces remain in stock as new original inventory. The 2N5115 operates as a voltage-controlled switch or amplifier element in analog circuits requiring P-channel depletion-mode operation.

Due to the obsolete product status of the original 2N5115 from Vishay Siliconix, equivalent substitute parts from active manufacturers are necessary to ensure long-term design continuity and supply chain reliability. Suitable alternatives maintain identical package geometry and compatible electrical characteristics within the JFET P-channel category.

Substiute Parts

2N5115

Vishay SiliconixIn Stock: 17902N5115 Datasheet

Current PartRFQ

2N5114

Microchip TechnologyIn Stock: 16032N5114 Datasheet

MFR RecommendedRFQ

2N5115

Microchip TechnologyIn Stock: 18062N5115 Datasheet

MFR RecommendedRFQ

2N5116

Solid State Inc.In Stock: 19992N5116 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N5115 is determined by the following mandatory criteria:

• FET Type: P-Channel configuration (required for circuit function)
• Package / Case: TO-206AA or TO-18-3 Metal Can (required for mechanical and thermal compatibility)
• Mounting Type: Through Hole (required for PCB assembly compatibility)

All substitute parts listed below satisfy these three core requirements. Additional electrical parameters (voltage ratings, current characteristics, input capacitance, and on-resistance) are provided for circuit-level compatibility verification but do not restrict substitution eligibility within this component category.

Parameter Comparison

Engineering Selection Recommendations

2N5114 (Microchip Technology): This part is recommended as the primary substitute. It maintains active product status with military-grade qualification (MIL-PRF-19500) and is manufactured by Microchip Technology. The 2N5114 provides the lowest on-resistance (75 Ohms) and highest drain current (90 mA @ 18 V) among available substitutes, making it suitable for applications requiring lower impedance switching or amplification.

2N5115 (Microchip Technology): This part is recommended as a secondary substitute. It shares the identical part number with the original Vishay Siliconix device but is sourced from Microchip Technology with active product status and military-grade qualification (MIL-PRF-19500). The Microchip 2N5115 provides moderate on-resistance (100 Ohms) and drain current (60 mA @ 15 V), offering a balanced electrical profile.

2N5116 (Solid State Inc.): This part is acceptable as a tertiary substitute. It maintains active product status and offers ROHS3 compliance, which may be advantageous for new designs subject to RoHS regulations. The 2N5116 exhibits the highest on-resistance (150 Ohms) among substitutes and should be selected only when higher impedance operation is acceptable or when RoHS3 compliance is a design requirement.

All three substitute parts share identical package geometry (TO-206AA, TO-18-3 Metal Can) and mounting type (Through Hole), ensuring direct mechanical and thermal compatibility with the original 2N5115 design.

Frequently Asked Questions (FAQ)

Q: Can the 2N5114, 2N5115 (Microchip), and 2N5116 be used interchangeably with the original Vishay Siliconix 2N5115?

A: Yes, within the constraints of your circuit design. All substitute parts share identical package geometry (TO-206AA, TO-18-3 Metal Can) and P-channel JFET configuration. However, electrical parameters such as on-resistance (RDS(On)) and drain current (Idss) differ between parts. Circuit designs with tight impedance or current specifications must account for these variations. Verify that your application tolerates the electrical parameter ranges of your selected substitute.

Q: What is the primary difference between the 2N5114 and 2N5115 from Microchip Technology?

A: The 2N5114 exhibits lower on-resistance (75 Ohms vs. 100 Ohms) and higher drain current (90 mA @ 18 V vs. 60 mA @ 15 V). Select the 2N5114 for applications requiring lower impedance or higher current capacity. Select the 2N5115 for applications with moderate impedance and current requirements.

Q: Why does the 2N5116 have higher on-resistance than the other substitutes?

A: The 2N5116 from Solid State Inc. is specified with 150 Ohms on-resistance, which is higher than the Microchip alternatives. This characteristic is inherent to the device design and manufacturing process. The 2N5116 remains a valid substitute provided your circuit design accommodates this higher impedance value.

Q: Is RoHS compliance a factor in selecting a substitute?

A: RoHS compliance is a design requirement consideration, not a substitution criterion. The 2N5114 and 2N5115 from Microchip Technology are RoHS non-compliant, matching the original Vishay Siliconix device. The 2N5116 from Solid State Inc. is ROHS3 compliant. If your design or end-use application requires RoHS3 compliance, select the 2N5116. Otherwise, all three substitutes are electrically and mechanically compatible.

Q: Do the military-grade qualifications (MIL-PRF-19500) of the Microchip parts affect substitution?

A: Military-grade qualification indicates enhanced quality and reliability standards but does not restrict substitution. The Microchip 2N5114 and 2N5115 carry MIL-PRF-19500 qualification, which may be beneficial for applications requiring higher reliability assurance. This qualification is not a requirement for substitution but may influence selection based on application criticality.

Q: Can I use the 2N5116 in a design originally specified for the Vishay Siliconix 2N5115?

A: Yes, provided your circuit design accommodates the 2N5116's higher on-resistance (150 Ohms). The identical package geometry and P-channel JFET configuration ensure mechanical and thermal compatibility. Perform circuit simulation or testing to confirm that the higher impedance does not degrade circuit performance or introduce unacceptable signal distortion.