2N5089G Equivalent & Substitute Parts

Part Overview

The 2N5089G is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 50 mA, collector-emitter breakdown voltage of 25 V, and a transition frequency of 50 MHz in a Through Hole TO-92 package. The 2N5089G is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts maintain electrical equivalence while offering alternative packaging options or active product status from alternative manufacturers.

Substiute Parts

2N5089G

onsemiIn Stock: 126062N5089G Datasheet

Current PartRFQ

MMBT5089LT1G

onsemiIn Stock: 35446MMBT5089LT1G Datasheet

SimilarRFQ

2N5089 PBFREE

Central Semiconductor CorpIn Stock: 138232N5089 PBFREE Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the 2N5089G are selected based on strict electrical and mechanical parameter equivalence. The primary substitution criteria are:

Electrical Equivalence Parameters:

• Transistor Type: NPN
• Maximum Collector Current (Ic): 50 mA
• Collector-Emitter Breakdown Voltage: 25 V
• Vce Saturation characteristics: 500mV @ 1mA, 10mA
• Collector Cutoff Current (ICBO): 50 nA
• DC Current Gain (hFE): 400 minimum @ 100µA, 5V
• Transition Frequency: 50 MHz
• Operating Temperature Range: -55°C to 150°C minimum

Mechanical Compatibility Parameters:

• Mounting Type: Through Hole or Surface Mount (package-dependent)
• Package designation and pin configuration

Substitutes are grouped into two categories: direct manufacturer equivalents (same base part number from alternative manufacturers) and functional equivalents (alternative package forms with identical electrical specifications).

Parameter Comparison

Engineering Selection Recommendations

2N5089 PBFREE (Central Semiconductor Corp)

This part is a direct Through Hole equivalent to the 2N5089G. It maintains identical electrical specifications and the same TO-92-3 package form factor, enabling direct board-level substitution without layout modifications. The 2N5089 PBFREE carries Active product status and ROHS3 compliance, providing long-term availability and regulatory alignment. The extended operating temperature range (-65°C to 150°C) offers additional thermal margin compared to the original 2N5089G specification. This substitute is appropriate for applications requiring Through Hole mounting and direct pin compatibility.

MMBT5089LT1G (onsemi)

This part provides electrical equivalence with a Surface Mount SOT-23-3 package form factor. All critical electrical parameters match the 2N5089G specification, including collector current, breakdown voltage, saturation characteristics, and transition frequency. The MMBT5089LT1G carries Active product status and ROHS3 compliance. The maximum power dissipation is reduced to 300 mW compared to the 625 mW rating of the Through Hole version; this reduction reflects the thermal characteristics of the smaller surface mount package rather than a functional limitation. This substitute is appropriate for new designs utilizing surface mount assembly or for applications where board space is constrained. PCB layout and thermal management must account for the reduced power rating.

Frequently Asked Questions (FAQ)

Q: Can the MMBT5089LT1G replace the 2N5089G in an existing Through Hole design?

A: No. The MMBT5089LT1G uses a Surface Mount SOT-23-3 package, while the 2N5089G uses a Through Hole TO-92-3 package. Direct board-level substitution is not possible without PCB redesign and assembly process changes. For Through Hole applications, use the 2N5089 PBFREE substitute.

Q: What is the significance of the reduced power rating (300 mW) in the MMBT5089LT1G?

A: The 300 mW rating reflects the thermal dissipation capability of the smaller SOT-23-3 surface mount package, not a reduction in electrical performance. All electrical parameters remain equivalent to the 2N5089G. Applications must ensure that actual power dissipation does not exceed the package thermal limit.

Q: Are all substitute parts ROHS3 compliant?

A: The 2N5089 PBFREE and MMBT5089LT1G are both ROHS3 compliant. The original 2N5089G RoHS status is not specified in the provided data.

Q: Can I use the 2N5089 PBFREE as a direct replacement for the obsolete 2N5089G?

A: Yes. The 2N5089 PBFREE maintains identical electrical specifications and the same TO-92-3 Through Hole package. No circuit modifications or board redesign are required. The part is manufactured by Central Semiconductor Corp and carries Active product status.

Q: What is the difference between the 2N5089G and 2N5089 PBFREE in terms of operating temperature?

A: The 2N5089 PBFREE has an extended operating temperature range of -65°C to 150°C, compared to the 2N5089G range of -55°C to 150°C. This provides an additional 10°C of low-temperature margin.

Q: Are the electrical characteristics identical across all three parts?

A: Yes. All three parts (2N5089G, 2N5089 PBFREE, and MMBT5089LT1G) share identical electrical specifications for collector current, breakdown voltage, saturation voltage, cutoff current, DC current gain, and transition frequency. The differences are packaging form factor and power dissipation rating (which reflects package thermal capability, not electrical performance).