2N5088_D81Z Equivalent & Substitute Parts

Part Overview

The 2N5088_D81Z is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 100 mA, collector-emitter breakdown voltage of 30 V, and maximum power dissipation of 625 mW in a Through Hole TO-92-3 package. The 2N5088_D81Z is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

2N5088_D81Z
onsemiIn Stock: 9952N5088_D81Z Datasheet
2N5088_D81Z
Current Part
2N3904BU
onsemiIn Stock: 221042N3904BU Datasheet
2N3904BU
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) 500 mV @ 1 mA, 10 mA
DC Current Gain (hFE) (Min) 300 @ 100 µA, 5 V
Power - Max 625 mW
Frequency - Transition 50 MHz
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-92-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the 2N5088_D81Z is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Collector-emitter breakdown voltage must equal or exceed 30 V
  • Maximum collector current must equal or exceed 100 mA
  • Maximum power dissipation must equal or exceed 625 mW
  • Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

  • Package type must be TO-92-3 (Through Hole)
  • Pin configuration must be compatible with TO-226-3 standard

Compliance Criteria:

  • REACH compliance status must be unaffected or compliant
  • ECCN classification must be EAR99

The 2N3904BU meets all substitution criteria. This device is an active product with enhanced electrical specifications, including higher collector current (200 mA), higher breakdown voltage (40 V), and superior frequency response (300 MHz), while maintaining identical power dissipation (625 mW) and package configuration (TO-92-3).

Parameter Comparison

Parameter 2N5088_D81Z 2N3904BU Unit
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 200 mA
Voltage - Collector Emitter Breakdown (Max) 30 40 V
Power - Max 625 625 mW
Frequency - Transition 50 300 MHz
Operating Temperature -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Product Status Obsolete Active
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

The 2N3904BU is a direct substitute for the 2N5088_D81Z based on the following factors:

Product Status: The 2N3904BU is classified as Active, ensuring long-term availability and supply chain continuity. The 2N5088_D81Z is obsolete, creating procurement risk and limiting future sourcing options.

Compliance Status: Both devices maintain REACH Unaffected status and EAR99 ECCN classification, ensuring regulatory alignment for existing applications.

Electrical Performance: The 2N3904BU exceeds the minimum electrical requirements of the 2N5088_D81Z across all critical parameters. The higher collector current rating (200 mA vs. 100 mA), increased breakdown voltage (40 V vs. 30 V), and enhanced frequency response (300 MHz vs. 50 MHz) provide design margin and improved performance characteristics without compromising backward compatibility.

Package Compatibility: Both devices utilize identical TO-92-3 Through Hole packaging, enabling direct physical substitution without circuit board redesign.

Frequently Asked Questions (FAQ)

Q: Can the 2N3904BU directly replace the 2N5088_D81Z in existing circuits?

A: Yes. The 2N3904BU meets or exceeds all electrical specifications of the 2N5088_D81Z and shares identical TO-92-3 package configuration. Pin-to-pin compatibility is maintained, allowing direct substitution without circuit modification.

Q: What are the key differences between these two transistors?

A: The 2N3904BU provides enhanced performance specifications: maximum collector current of 200 mA (versus 100 mA), collector-emitter breakdown voltage of 40 V (versus 30 V), and transition frequency of 300 MHz (versus 50 MHz). Both devices maintain identical maximum power dissipation (625 mW) and operating temperature range (-55°C to 150°C).

Q: Why is the 2N5088_D81Z classified as obsolete?

A: The 2N5088_D81Z is no longer in active production. The 2N3904BU represents the current-generation equivalent, offering superior specifications and assured long-term availability.

Q: Are there any compliance or regulatory differences between these parts?

A: No. Both devices maintain REACH Unaffected status and EAR99 ECCN classification. Regulatory compliance is equivalent for both components.

Q: Does the higher performance of the 2N3904BU affect circuit behavior?

A: The 2N3904BU's enhanced specifications provide additional design margin. In applications where the 2N5088_D81Z operated within its rated limits, the 2N3904BU will perform identically or with improved characteristics. No adverse effects result from the higher ratings.

Q: Is the TO-92-3 package identical for both devices?

A: Yes. Both the 2N5088_D81Z and 2N3904BU utilize the TO-92-3 (TO-226AA) Through Hole package with identical pin configuration and mechanical dimensions.

Q: What is the inventory status of these components?

A: The 2N5088_D81Z has 890 pieces in stock (obsolete status). The 2N3904BU has 22,060 pieces in stock (active status), providing superior supply availability.

Request Quote (Ships tomorrow)