Equivalent & Substitute Parts Reference for 2N5039

Part Overview

2N5039 is an NPN silicon bipolar junction transistor in the Transistors, Bipolar (BJT) category. The product offers a maximum collector current of 20 A, a collector-emitter breakdown voltage of 75 V, and a maximum power dissipation of 140 W in a TO-204AD (TO-3) through-hole package. The active status of the 2N5039 ensures current availability, but alternative models may be necessary for compliance requirements, supply chain management, or specific application constraints, particularly where RoHS compliance is essential.

Substiute Parts

2N5039

Microchip TechnologyIn Stock: 8822N5039 Datasheet

Current PartRFQ

2N5038G

onsemiIn Stock: 13642N5038G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution for 2N5039 is determined strictly by the following allowed electrical and mechanical parameters: transistor type (NPN), maximum collector current (20 A), collector-emitter breakdown voltage (≥ 75 V), saturation voltage specification (2.5V @ 5A, 20A), minimum DC current gain, maximum power dissipation (140 W), operating temperature, mounting type (through hole), package type (TO-204AA, TO-3), product status, RoHS and REACH compliance, ECCN, and HTSUS. Only parts matching these parameters are considered equivalent substitutes.

Parameter Comparison

Engineering Selection Recommendations

Both 2N5039 and 2N5038G are active products and meet the same critical electrical and mechanical specifications. 2N5038G is ROHS3 compliant, whereas 2N5039 is RoHS non-compliant. Select 2N5038G for applications requiring RoHS compliance. Both devices have unaffected REACH status and identical export control and tariff codes.

Frequently Asked Questions (FAQ)

Q1: What are the main criteria for substituting 2N5039 with another part?
A1: Substitution is strictly based on transistor type, maximum collector current, collector-emitter voltage rating, DC current gain, power rating, package/case type, and mounting type.

Q2: Does 2N5038G match the mechanical footprint of 2N5039?
A2: Both 2N5038G and 2N5039 use the TO-204AA, TO-3 through-hole package, matching mechanical mounting and footprint specifications.

Q3: Are there differences in compliance between the two parts?
A3: 2N5039 is RoHS non-compliant, while 2N5038G is ROHS3 compliant. Both are REACH unaffected.

Q4: How does DC current gain specification differ between the two?
A4: 2N5039 specifies a minimum DC current gain of 30 @ 2A, 5V. 2N5038G specifies 20 @ 12A, 5V. Evaluate application requirements for DC current gain at relevant operating points.

Q5: Are transition frequency or cutoff characteristics relevant for substitution?
A5: Only parameters explicitly provided are used for substitution. Transition frequency and cutoff characteristics are not included.

Q6: What electrical parameters must be met for substitute selection?
A6: Transistor type, maximum collector current, collector-emitter breakdown voltage, maximum power dissipation, DC current gain, and saturation voltage specification are required matching parameters for substitution.