2N5038 NPN Bipolar Junction Transistor Equivalent & Substitute Parts

Part Overview

The 2N5038 is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp, designed for high-current switching and amplification applications. This device features a maximum collector current of 20 A, collector-emitter breakdown voltage of 90 V, and maximum power dissipation of 140 W in a TO-3 package configuration.

The 2N5038 is classified as an obsolete product. Locating equivalent substitute parts is necessary for ongoing maintenance, repair, and new design implementations where this component is specified or required as a direct replacement in existing circuits.

Substiute Parts

2N5038
Central Semiconductor CorpIn Stock: 224912N5038 Datasheet
2N5038
Current Part
2N5038G
onsemiIn Stock: 13642N5038G Datasheet
2N5038G
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Maximum 20 A
Voltage - Collector Emitter Breakdown (Max) 90 V
Power - Maximum 140 W
Vce Saturation (Max) @ Ib, Ic 2.5V @ 5A, 20A V
Frequency - Transition 60 MHz
Operating Temperature Range -65 to 200 °C (TJ)
Package / Case TO-204AA, TO-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the 2N5038 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • Transistor polarity: NPN configuration
  • Maximum collector current: 20 A
  • Collector-emitter breakdown voltage: 90 V
  • Maximum power dissipation: 140 W
  • Saturation voltage characteristics: 2.5 V @ 5A, 20A
  • Operating temperature range: -65°C to 200°C

Mechanical Equivalence Criteria:

  • Package type: TO-204AA / TO-3 through-hole configuration
  • Mounting method: Through-hole assembly

The 2N5038G from onsemi meets all specified electrical and mechanical parameters, establishing it as a direct functional equivalent. Both devices share identical maximum ratings for collector current, breakdown voltage, power dissipation, and saturation voltage specifications. Package compatibility is confirmed through TO-3 standardization.

Parameter Comparison

Parameter 2N5038 (Central Semiconductor) 2N5038G (onsemi) Match Status
Transistor Type NPN NPN Equivalent
Current - Collector (Ic) Maximum 20 A 20 A Equivalent
Voltage - Collector Emitter Breakdown (Max) 90 V 90 V Equivalent
Power - Maximum 140 W 140 W Equivalent
Vce Saturation (Max) @ Ib, Ic 2.5V @ 5A, 20A 2.5V @ 5A, 20A Equivalent
Operating Temperature Range -65°C to 200°C -65°C to 200°C Equivalent
Package / Case TO-204AA, TO-3 TO-204AA, TO-3 Equivalent
Mounting Type Through Hole Through Hole Equivalent
Product Status Obsolete Active Substitute Available
RoHS Status Not specified ROHS3 Compliant Enhanced Compliance

Engineering Selection Recommendations

The 2N5038G from onsemi is a direct substitute for the obsolete 2N5038. Selection of the 2N5038G is supported by the following factors:

Product Status: The 2N5038G maintains active product status with current manufacturing and distribution, ensuring long-term availability compared to the obsolete 2N5038.

Regulatory Compliance: The 2N5038G is ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component procurement.

Electrical Equivalence: All maximum ratings, saturation characteristics, and operating temperature specifications are identical between the two devices, confirming direct functional substitution without circuit modification.

Package Compatibility: Both devices utilize the TO-3 through-hole package standard, enabling direct mechanical replacement in existing PCB layouts and assembly processes.

Frequently Asked Questions (FAQ)

Q: Can the 2N5038G replace the 2N5038 in existing circuit designs?

A: Yes. The 2N5038G is electrically and mechanically equivalent to the 2N5038 across all specified parameters. Direct substitution is possible without circuit redesign or component rerating.

Q: What is the primary reason for seeking a substitute for the 2N5038?

A: The 2N5038 is classified as obsolete. The 2N5038G provides an active, currently manufactured alternative with identical electrical specifications and enhanced regulatory compliance.

Q: Are there package differences between the 2N5038 and 2N5038G?

A: Both devices use the TO-3 through-hole package (TO-204AA designation). No package modification is required for substitution.

Q: Does the 2N5038G meet modern environmental standards?

A: Yes. The 2N5038G is ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What are the critical parameters that define substitution eligibility?

A: Substitution is determined by equivalence in collector current (20 A), collector-emitter breakdown voltage (90 V), power dissipation (140 W), saturation voltage (2.5 V @ 5A, 20A), operating temperature range (-65°C to 200°C), and TO-3 package configuration.

Q: Is the DC current gain (hFE) specification identical between the two devices?

A: The DC current gain specifications differ. The 2N5038 specifies hFE minimum of 50 @ 2A, 5V, while the 2N5038G specifies hFE minimum of 20 @ 12A, 5V. Both values remain within acceptable ranges for the specified maximum collector current of 20 A and do not prevent functional substitution in applications where the 2N5038 was originally specified.

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