2N4923 NPN Bipolar Junction Transistor Equivalent & Substitute Parts

Part Overview

The 2N4923 is an NPN bipolar junction transistor manufactured by STMicroelectronics, designed for general-purpose switching and amplification applications. This device is rated for 80 V collector-emitter breakdown voltage with a maximum collector current of 1 A and 30 W power dissipation capability. The 2N4923 is classified as an obsolete product, making equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. The availability of active equivalent devices ensures design flexibility and supply chain reliability for applications requiring this transistor specification.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	1	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	600 mV @ 100 mA, 1 A	—
Current - Collector Cutoff (Max)	500	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 500 mA, 1 V	—
Power - Max	30	W
Frequency - Transition	3	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-225AA, TO-126-3	—

Substitute Part Grouping Explanation

Substitution of the 2N4923 is determined by strict electrical and mechanical parameter matching. The following criteria establish valid equivalence:

Electrical Parameters (Must Match):

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 600 mV @ 100 mA, 1 A
Current - Collector Cutoff (Max): 500 µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500 mA, 1 V
Power - Max: 30 W
Frequency - Transition: 3 MHz

Mechanical Parameters (Must Match):

Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3

The 2N4923G manufactured by onsemi meets all specified electrical and mechanical parameters and is classified as an active product with current availability. This device provides direct functional equivalence for the obsolete 2N4923.

Parameter Comparison

Parameter	2N4923 (STMicroelectronics)	2N4923G (onsemi)	Match Status
Transistor Type	NPN	NPN	✓ Match
Current - Collector (Ic) (Max)	1 A	1 A	✓ Match
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	✓ Match
Vce Saturation (Max) @ Ib, Ic	600 mV @ 100 mA, 1 A	600 mV @ 100 mA, 1 A	✓ Match
Current - Collector Cutoff (Max)	500 µA	500 µA	✓ Match
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 500 mA, 1 V	30 @ 500 mA, 1 V	✓ Match
Power - Max	30 W	30 W	✓ Match
Frequency - Transition	3 MHz	3 MHz	✓ Match
Mounting Type	Through Hole	Through Hole	✓ Match
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	✓ Match
Product Status	Obsolete	Active	Substitute is Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	Substitute is Compliant

Engineering Selection Recommendations

The 2N4923G manufactured by onsemi is the direct equivalent substitute for the obsolete 2N4923. Selection of the 2N4923G is supported by the following factors:

Product Status: The 2N4923G is an active product with current manufacturing and distribution support, ensuring long-term availability and supply chain continuity compared to the obsolete 2N4923.

Electrical Equivalence: All critical electrical parameters match exactly, including collector current rating, breakdown voltage, saturation characteristics, current gain, power dissipation, and transition frequency. These parameters ensure functional interchangeability in circuit applications.

Mechanical Compatibility: Both devices utilize identical through-hole mounting and package configurations (TO-225AA, TO-126-3), enabling direct physical substitution without PCB redesign.

Regulatory Compliance: The 2N4923G meets ROHS3 compliance requirements, whereas the original 2N4923 is RoHS non-compliant. This compliance advantage supports modern manufacturing and environmental standards.

Moisture Sensitivity: The 2N4923G carries a Not Applicable moisture sensitivity level, eliminating moisture-related handling constraints associated with the original device.

Frequently Asked Questions (FAQ)

Q: Can the 2N4923G be used as a direct replacement for the 2N4923 in existing designs?

A: Yes. The 2N4923G meets all electrical and mechanical specifications of the 2N4923. Direct substitution is supported without circuit modification or performance degradation.

Q: What is the primary advantage of using the 2N4923G over the original 2N4923?

A: The 2N4923G is an active product with current manufacturing support, whereas the 2N4923 is obsolete. Additionally, the 2N4923G is ROHS3 compliant, meeting modern regulatory requirements.

Q: Are the package configurations identical between the 2N4923 and 2N4923G?

A: Yes. Both devices are available in TO-225AA and TO-126-3 through-hole packages, ensuring mechanical compatibility and identical PCB footprints.

Q: What are the key electrical parameters that define substitution eligibility for this transistor?

A: Substitution eligibility is determined by matching the following parameters: NPN transistor type, 1 A maximum collector current, 80 V collector-emitter breakdown voltage, 600 mV saturation voltage at specified conditions, 500 µA collector cutoff current, 30 minimum DC current gain, 30 W maximum power dissipation, and 3 MHz transition frequency.

Q: Does the 2N4923G require different handling procedures compared to the 2N4923?

A: No. The 2N4923G carries a Not Applicable moisture sensitivity level, eliminating moisture-related handling constraints. Standard through-hole component handling procedures apply.

Q: Are there any operating temperature differences between the 2N4923 and 2N4923G?

A: The 2N4923 is rated to a maximum junction temperature of 150°C. The 2N4923G operates across an extended temperature range of −65°C to 150°C, providing broader environmental operating capability.

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