2N4919G Equivalent & Substitute Parts

Part Overview

The 2N4919G is a PNP bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 1 A maximum collector current. The device is packaged in TO-126 through-hole configuration with 30 W maximum power dissipation and operates across a temperature range of -65°C to 150°C. The 2N4919G is designated as Last Time Buy, indicating discontinued production status. Identification of equivalent and substitute parts is necessary to support ongoing design requirements and procurement planning for applications currently utilizing this transistor.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	-
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	1	A
Power - Max	30	W
Frequency - Transition	3	MHz
Operating Temperature	-65 to 150	°C
Mounting Type	Through Hole	-
Package / Case	TO-126-3	-
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	-
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 500mA, 1V	-

Substitute Part Grouping Explanation

Substitution of the 2N4919G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: PNP (mandatory)
Voltage - Collector Emitter Breakdown: minimum 60 V (equal or greater)
Current - Collector (Ic) (Max): minimum 1 A (equal or greater)
Mounting Type: Through Hole (mandatory)
Package / Case: TO-126-3 or equivalent (mandatory)
Operating Temperature Range: minimum -65°C to 150°C (equal or greater)

Secondary Compatibility Factors:

Power - Max: minimum 30 W (equal or greater)
Frequency - Transition: 3 MHz or greater (where specified)
RoHS3 Compliance: required for new designs
Vce Saturation characteristics: must support intended application current levels

Substitute parts are grouped into two categories: direct equivalents (matching all primary criteria) and functional alternatives (exceeding one or more electrical parameters while maintaining mechanical compatibility).

Parameter Comparison

Parameter	2N4919G	BD180G	BD13810STU	BD13816STU	BD440S	KSB1151YS	KSB1151YSTU
Manufacturer	onsemi	onsemi	Fairchild Semiconductor	onsemi	onsemi	Fairchild Semiconductor	Fairchild Semiconductor
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	60 V	80 V	60 V	60 V	60 V	60 V	60 V
Current - Collector (Ic) (Max)	1 A	1 A	1.5 A	1.5 A	4 A	5 A	5 A
Power - Max	30 W	30 W	1.25 W	1.25 W	36 W	1.3 W	1.3 W
Frequency - Transition	3 MHz	3 MHz	-	-	3 MHz	-	-
Operating Temperature (TJ)	-65 to 150°C	-65 to 150°C	150°C	150°C	150°C	150°C	150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-126-3	TO-126-3	TO-126-3	TO-126-3	TO-126-3	TO-126-3	TO-126-3
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	800mV @ 100mA, 1A	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	800mV @ 200mA, 2A	300mV @ 200mA, 2A	300mV @ 200mA, 2A
DC Current Gain (hFE) (Min)	30 @ 500mA, 1V	40 @ 150mA, 2V	63 @ 150mA, 2V	100 @ 150mA, 2V	40 @ 500mA, 1V	100 @ 2A, 1V	160 @ 2A, 1V
RoHS3 Compliance	Yes	Yes	-	Yes	Yes	-	-
Product Status	Last Time Buy	Active	Active	Last Time Buy	Last Time Buy	Active	Active

Engineering Selection Recommendations

Direct Equivalent - Recommended for Drop-In Replacement:

BD180G (onsemi) serves as the manufacturer-recommended equivalent. This part maintains identical electrical specifications for voltage (80 V rated, exceeding 60 V requirement), current (1 A), power dissipation (30 W), and transition frequency (3 MHz). Operating temperature range matches the 2N4919G (-65°C to 150°C). BD180G is in Active product status with RoHS3 compliance, ensuring long-term availability and regulatory compliance. Higher collector-emitter breakdown voltage (80 V vs. 60 V) provides additional design margin without circuit modification.

Functional Alternatives - Higher Current Capacity:

BD13810STU and BD13816STU support 1.5 A collector current, exceeding the 2N4919G specification by 50%. Both maintain 60 V voltage rating and TO-126-3 packaging. BD13816STU is manufactured by onsemi with RoHS3 compliance. These parts are suitable for applications requiring increased current headroom while maintaining voltage and package compatibility. Power dissipation is reduced to 1.25 W, indicating different thermal characteristics.

BD440S (onsemi) provides 4 A collector current capacity with 36 W power dissipation, supporting high-current applications. Voltage rating remains 60 V with TO-126-3 packaging and 3 MHz transition frequency. RoHS3 compliant. Suitable for designs requiring significant current margin above 1 A specification.

KSB1151YS and KSB1151YSTU (Fairchild Semiconductor) deliver 5 A collector current with 60 V voltage rating and TO-126-3 packaging. Both are in Active product status. KSB1151YSTU exhibits higher DC current gain (160 vs. 100 minimum). These parts address applications requiring maximum current capacity within the TO-126-3 form factor.

Compliance and Availability Considerations:

For new designs and long-term procurement, BD180G and KSB1151YS/KSB1151YSTU are preferred due to Active product status. BD13816STU and BD440S are designated Last Time Buy, indicating limited future availability. The 2N4919G itself is Last Time Buy, necessitating transition planning.

Frequently Asked Questions (FAQ)

Q: Can BD180G directly replace 2N4919G in existing circuits?

A: BD180G is the manufacturer-recommended equivalent and provides direct replacement capability. The 80 V collector-emitter breakdown rating exceeds the 2N4919G requirement of 60 V, and all other electrical parameters (1 A current, 30 W power, 3 MHz frequency, -65°C to 150°C temperature range) are identical or superior. No circuit modification is required.

Q: What is the difference between BD13810STU and BD13816STU?

A: Both parts support 1.5 A collector current and 60 V voltage rating in TO-126-3 packaging. Primary differences are manufacturer (Fairchild vs. onsemi), DC current gain specification (63 vs. 100 minimum), and product status (Active vs. Last Time Buy). BD13816STU offers higher current gain and onsemi manufacturing support.

Q: Are KSB1151YS and KSB1151YSTU interchangeable?

A: Both parts are manufactured by Fairchild Semiconductor with identical electrical ratings (5 A, 60 V, TO-126-3). KSB1151YSTU exhibits higher DC current gain (160 vs. 100 minimum) and both are in Active product status. Selection depends on specific circuit gain requirements and packaging preference.

Q: Why do some substitute parts have lower power ratings than 2N4919G?

A: BD13810STU, BD13816STU, KSB1151YS, and KSB1151YSTU are rated for 1.25 W or 1.3 W maximum power dissipation, compared to 2N4919G at 30 W. These parts are designed for lower thermal environments or applications with reduced power dissipation requirements. They remain electrically compatible for voltage and current specifications but require thermal design verification for high-power applications.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts utilize TO-126-3 through-hole packaging, identical to 2N4919G. Physical dimensions and pin configurations are compatible, enabling direct PCB mounting without layout modification. Thermal performance may vary due to different die designs and power ratings.

Q: Which substitute offers the best long-term availability?

A: BD180G, KSB1151YS, and KSB1151YSTU are designated Active product status, indicating ongoing manufacturing and long-term availability. BD13816STU and BD440S are Last Time Buy, with limited future procurement windows. For new designs requiring extended product lifecycle support, Active status parts are preferred.

Q: Are all substitutes RoHS3 compliant?

A: BD180G, BD13816STU, and BD440S are explicitly RoHS3 compliant. KSB1151YS and KSB1151YSTU compliance status is not specified in available documentation. For applications requiring RoHS3 certification, onsemi-manufactured parts (BD180G, BD13816STU, BD440S) provide documented compliance.

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