2N4854UTX Equivalent & Substitute Parts

Part Overview

The 2N4854UTX is a Bipolar (BJT) Transistor Array containing 1 NPN and 1 PNP transistor configuration, rated for 40V collector-emitter breakdown voltage and 600mA maximum collector current. This component is manufactured by TT Electronics/Optek Technology and is packaged in a 6-CLCC surface mount package.

The 2N4854UTX is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems and applications currently utilizing this component.

Substiute Parts

2N4854UTX
TT Electronics/Optek TechnologyIn Stock: 8772N4854UTX Datasheet
2N4854UTX
Current Part
2N4854U
Microchip TechnologyIn Stock: 11792N4854U Datasheet
2N4854U
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type 1 NPN, 1 PNP
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max) 10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 600 mW
Operating Temperature -65 to 200 °C (TJ)
Mounting Type Surface Mount
Package / Case 6-CLCC
RoHS Status Non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2N4854UTX is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor configuration: 1 NPN and 1 PNP array
  • Maximum collector current: 600mA
  • Maximum collector-emitter breakdown voltage: 40V
  • Vce saturation characteristics: 400mV @ 15mA, 150mA
  • DC current gain (hFE): minimum 100 @ 150mA, 10V
  • Operating temperature range: -65°C to 200°C

Mechanical Compatibility Criteria:

  • Surface mount packaging
  • Pin count and footprint compatibility

The 2N4854U from Microchip Technology meets the electrical specifications of the 2N4854UTX. However, the 2N4854U utilizes a 6-SMD, No Lead package configuration, which differs from the 6-CLCC package of the original part. This package difference requires physical board layout and footprint verification before implementation.

Parameter Comparison

Parameter 2N4854UTX (Main Part) 2N4854U (Substitute) Match Status
Manufacturer TT Electronics/Optek Technology Microchip Technology Different
Transistor Type 1 NPN, 1 PNP NPN, PNP Compatible
Current - Collector (Ic) (Max) 600 mA 600 mA Match
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V Match
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA 400mV @ 15mA, 150mA Match
Current - Collector Cutoff (Max) 10 nA 10 µA Different
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V Match
Power - Max 600 mW 300 mW Different
Operating Temperature -65 to 200 °C (TJ) -65 to 200 °C (TJ) Match
Mounting Type Surface Mount Surface Mount Match
Package / Case 6-CLCC 6-SMD, No Lead Different
Product Status Obsolete Active Different
RoHS Status Non-compliant Non-compliant Match
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Match

Engineering Selection Recommendations

2N4854U Substitution Considerations:

The 2N4854U is an active product from Microchip Technology and provides electrical equivalence to the obsolete 2N4854UTX across primary functional parameters: collector current, breakdown voltage, saturation characteristics, and current gain specifications.

The following differences require evaluation:

  1. Power Dissipation: The 2N4854U has a maximum power rating of 300mW compared to 600mW for the 2N4854UTX. Applications requiring sustained power dissipation above 300mW are not suitable for this substitute.

  2. Collector Cutoff Current: The 2N4854U specifies 10µA maximum ICBO compared to 10nA for the 2N4854UTX. This represents a 1000-fold increase in leakage current and may affect circuit performance in low-current or high-impedance applications.

  3. Package Configuration: The 2N4854U uses a 6-SMD, No Lead package versus the 6-CLCC package of the original part. PCB footprint redesign and revalidation are required.

  4. Compliance Status: Both parts are RoHS non-compliant and REACH unaffected, maintaining equivalent regulatory positioning.

The 2N4854U is suitable as a substitute only when power dissipation remains below 300mW, leakage current specifications are not critical, and package footprint modification is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the 2N4854U directly replace the 2N4854UTX without PCB modification?

A: No. The 2N4854U uses a 6-SMD, No Lead package while the 2N4854UTX uses a 6-CLCC package. These packages have different footprints and pin configurations. PCB layout redesign is required.

Q: What is the significance of the power rating difference between these parts?

A: The 2N4854UTX is rated for 600mW maximum power dissipation, while the 2N4854U is rated for 300mW. If your application requires sustained power dissipation above 300mW, the 2N4854U cannot be used as a substitute.

Q: How does the collector cutoff current difference affect circuit operation?

A: The 2N4854U has a maximum ICBO of 10µA compared to 10nA for the 2N4854UTX. This 1000-fold increase in leakage current may impact circuits sensitive to low-current bias conditions, high-impedance input stages, or precision analog applications.

Q: Are there compliance or regulatory differences between these parts?

A: Both parts are RoHS non-compliant and REACH unaffected. No regulatory advantage exists between the two parts.

Q: What is the primary advantage of using the 2N4854U as a substitute?

A: The 2N4854U is an active product with current manufacturing support and availability, whereas the 2N4854UTX is obsolete. For applications where power dissipation and leakage current specifications are acceptable, the 2N4854U provides supply continuity.

Q: Should I verify electrical performance before implementing the 2N4854U in production?

A: Circuit validation should confirm that the 300mW power rating and 10µA maximum leakage current are acceptable for your specific application requirements.

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