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2N4854UTX Equivalent & Substitute Parts
Part Overview
The 2N4854UTX is a Bipolar (BJT) Transistor Array containing 1 NPN and 1 PNP transistor configuration, rated for 40V collector-emitter breakdown voltage and 600mA maximum collector current. This component is manufactured by TT Electronics/Optek Technology and is packaged in a 6-CLCC surface mount package.
The 2N4854UTX is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems and applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 1 NPN, 1 PNP | — |
| Current - Collector (Ic) (Max) | 600 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 | V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA | — |
| Current - Collector Cutoff (Max) | 10 | nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | — |
| Power - Max | 600 | mW |
| Operating Temperature | -65 to 200 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | 6-CLCC | — |
| RoHS Status | Non-compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the 2N4854UTX is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- Transistor configuration: 1 NPN and 1 PNP array
- Maximum collector current: 600mA
- Maximum collector-emitter breakdown voltage: 40V
- Vce saturation characteristics: 400mV @ 15mA, 150mA
- DC current gain (hFE): minimum 100 @ 150mA, 10V
- Operating temperature range: -65°C to 200°C
Mechanical Compatibility Criteria:
- Surface mount packaging
- Pin count and footprint compatibility
The 2N4854U from Microchip Technology meets the electrical specifications of the 2N4854UTX. However, the 2N4854U utilizes a 6-SMD, No Lead package configuration, which differs from the 6-CLCC package of the original part. This package difference requires physical board layout and footprint verification before implementation.
Parameter Comparison
| Parameter | 2N4854UTX (Main Part) | 2N4854U (Substitute) | Match Status |
|---|---|---|---|
| Manufacturer | TT Electronics/Optek Technology | Microchip Technology | Different |
| Transistor Type | 1 NPN, 1 PNP | NPN, PNP | Compatible |
| Current - Collector (Ic) (Max) | 600 mA | 600 mA | Match |
| Voltage - Collector Emitter Breakdown (Max) | 40 V | 40 V | Match |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA | 400mV @ 15mA, 150mA | Match |
| Current - Collector Cutoff (Max) | 10 nA | 10 µA | Different |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | 100 @ 150mA, 10V | Match |
| Power - Max | 600 mW | 300 mW | Different |
| Operating Temperature | -65 to 200 °C (TJ) | -65 to 200 °C (TJ) | Match |
| Mounting Type | Surface Mount | Surface Mount | Match |
| Package / Case | 6-CLCC | 6-SMD, No Lead | Different |
| Product Status | Obsolete | Active | Different |
| RoHS Status | Non-compliant | Non-compliant | Match |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Match |
Engineering Selection Recommendations
2N4854U Substitution Considerations:
The 2N4854U is an active product from Microchip Technology and provides electrical equivalence to the obsolete 2N4854UTX across primary functional parameters: collector current, breakdown voltage, saturation characteristics, and current gain specifications.
The following differences require evaluation:
-
Power Dissipation: The 2N4854U has a maximum power rating of 300mW compared to 600mW for the 2N4854UTX. Applications requiring sustained power dissipation above 300mW are not suitable for this substitute.
-
Collector Cutoff Current: The 2N4854U specifies 10µA maximum ICBO compared to 10nA for the 2N4854UTX. This represents a 1000-fold increase in leakage current and may affect circuit performance in low-current or high-impedance applications.
-
Package Configuration: The 2N4854U uses a 6-SMD, No Lead package versus the 6-CLCC package of the original part. PCB footprint redesign and revalidation are required.
-
Compliance Status: Both parts are RoHS non-compliant and REACH unaffected, maintaining equivalent regulatory positioning.
The 2N4854U is suitable as a substitute only when power dissipation remains below 300mW, leakage current specifications are not critical, and package footprint modification is acceptable.
Frequently Asked Questions (FAQ)
Q: Can the 2N4854U directly replace the 2N4854UTX without PCB modification?
A: No. The 2N4854U uses a 6-SMD, No Lead package while the 2N4854UTX uses a 6-CLCC package. These packages have different footprints and pin configurations. PCB layout redesign is required.
Q: What is the significance of the power rating difference between these parts?
A: The 2N4854UTX is rated for 600mW maximum power dissipation, while the 2N4854U is rated for 300mW. If your application requires sustained power dissipation above 300mW, the 2N4854U cannot be used as a substitute.
Q: How does the collector cutoff current difference affect circuit operation?
A: The 2N4854U has a maximum ICBO of 10µA compared to 10nA for the 2N4854UTX. This 1000-fold increase in leakage current may impact circuits sensitive to low-current bias conditions, high-impedance input stages, or precision analog applications.
Q: Are there compliance or regulatory differences between these parts?
A: Both parts are RoHS non-compliant and REACH unaffected. No regulatory advantage exists between the two parts.
Q: What is the primary advantage of using the 2N4854U as a substitute?
A: The 2N4854U is an active product with current manufacturing support and availability, whereas the 2N4854UTX is obsolete. For applications where power dissipation and leakage current specifications are acceptable, the 2N4854U provides supply continuity.
Q: Should I verify electrical performance before implementing the 2N4854U in production?
A: Circuit validation should confirm that the 300mW power rating and 10µA maximum leakage current are acceptable for your specific application requirements.
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