2N4416A JFET N-Channel Transistor Equivalent & Substitute Parts

Part Overview

The 2N4416A is an N-Channel JFET transistor rated for 35 V breakdown voltage with 300 mW maximum power dissipation in a TO-206AF (TO-72) metal can package. Originally manufactured by Vishay Siliconix, this part is now classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production and repair applications.

Substiute Parts

2N4416A
Vishay SiliconixIn Stock: 15022N4416A Datasheet
2N4416A
Current Part
2N4416A
Microchip TechnologyIn Stock: 14732N4416A Datasheet
2N4416A
MFR Recommended
J111
onsemiIn Stock: 95408J111 Datasheet
J111
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 35 V
Current - Drain (Idss) @ Vds (Vgs=0) 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 2.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds 4 pF @ 15V
Power - Max 300 mW
Operating Temperature -50 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-206AF, TO-72-4 Metal Can

Substitute Part Grouping Explanation

Substitution eligibility for the 2N4416A is determined by the following critical parameters:

  • FET Type: N-Channel (required match)
  • Voltage - Breakdown (V(BR)GSS): 35 V (required match)
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V (required match)
  • Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA (required match)
  • Input Capacitance (Ciss) (Max) @ Vds: 4 pF @ 15V (required match)
  • Power - Max: 300 mW minimum (equal or greater acceptable)
  • Mounting Type: Through Hole (required match)

Two substitute parts meet these criteria with varying package configurations and operational temperature ranges.

Parameter Comparison

Parameter 2N4416A (Vishay Siliconix) 2N4416A (Microchip Technology) J111 (onsemi)
FET Type N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 35 V 35 V 35 V
Drain to Source Voltage (Vdss) 35 V
Current - Drain (Idss) @ Vds (Vgs=0) 5 mA @ 15 V 5 mA @ 15 V 20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 2.5 V @ 1 nA 2.5 V @ 1 nA 3 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 4 pF @ 15V 4 pF @ 15V
Power - Max 300 mW 300 mW 625 mW
Operating Temperature -50 to 150 °C (TJ) -65 to 200 °C (TJ) -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-206AF, TO-72-4 Metal Can TO-206AF, TO-72-4 Metal Can TO-226-3, TO-92-3
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

The Microchip Technology 2N4416A is the direct equivalent to the Vishay Siliconix 2N4416A. It maintains identical electrical specifications and package configuration while offering active product status and an extended operating temperature range (-65 to 200°C versus -50 to 150°C). This part is recommended as the primary replacement for obsolete Vishay Siliconix inventory.

The onsemi J111 is a functional substitute with the same 35 V breakdown voltage and N-Channel configuration. However, it exhibits higher drain current (20 mA versus 5 mA at Vds=15V), different cutoff voltage characteristics (3 V @ 1 µA versus 2.5 V @ 1 nA), and a different package footprint (TO-92-3 versus TO-72). The J111 is suitable only for applications where these parameter differences are acceptable and where the TO-92-3 package can be accommodated. The J111 offers ROHS3 compliance, which may be required for certain regulatory environments.

Frequently Asked Questions (FAQ)

Q: Can the Microchip Technology 2N4416A be used as a direct replacement for the Vishay Siliconix 2N4416A?

A: Yes. The Microchip Technology 2N4416A is electrically and mechanically equivalent. It maintains the same breakdown voltage (35 V), drain current (5 mA @ 15 V), cutoff voltage (2.5 V @ 1 nA), input capacitance (4 pF @ 15V), and package configuration (TO-72). The extended operating temperature range provides additional design margin.

Q: Is the onsemi J111 a direct replacement for the 2N4416A?

A: The J111 is not a direct replacement. While both are N-Channel JFETs with 35 V breakdown voltage, the J111 has significantly different electrical characteristics: drain current of 20 mA (versus 5 mA), cutoff voltage of 3 V @ 1 µA (versus 2.5 V @ 1 nA), and a different package footprint (TO-92-3 versus TO-72). The J111 is a functional substitute only when these parameter differences are acceptable for the application.

Q: What are the package differences between the substitute parts?

A: The Microchip Technology 2N4416A uses the TO-72 metal can package, identical to the original Vishay Siliconix part. The onsemi J111 uses the TO-92-3 plastic package, which has a different pin configuration and physical footprint. PCB layout modifications are required if switching to the J111.

Q: Which substitute part should I select for new designs?

A: For new designs requiring the 2N4416A electrical specifications, use the Microchip Technology 2N4416A. It is active, maintains full electrical equivalence, and offers extended temperature range. The J111 should be selected only when its higher drain current and different package are compatible with the application requirements.

Q: Are there RoHS compliance considerations?

A: The Microchip Technology 2N4416A RoHS status is not specified in available data. The onsemi J111 is ROHS3 compliant. If RoHS compliance is a design requirement, verify the Microchip part status with the manufacturer or select the J111 if its electrical characteristics are acceptable.

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