2N4403NLBU Equivalent & Substitute Parts

Part Overview

The 2N4403NLBU is a PNP bipolar junction transistor (BJT) manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 600 mA, collector-emitter breakdown voltage of 40 V, and maximum power dissipation of 625 mW in a Through Hole TO-92-3 package. The 2N4403NLBU is classified as obsolete, making equivalent substitute parts necessary for ongoing design support and procurement continuity. Direct substitutes are available from both onsemi and Fairchild Semiconductor with identical electrical specifications and packaging.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	600	mA
Voltage - Collector Emitter Breakdown (Max)	40	V
Vce Saturation (Max) @ Ib, Ic	750 mV @ 50 mA, 500 mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150 mA, 2 V	—
Power - Max	625	mW
Frequency - Transition	200	MHz
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-92-3 (TO-226AA)	—

Substitute Part Grouping Explanation

Substitution of the 2N4403NLBU is determined by strict equivalence across the following electrical and mechanical parameters:

Transistor Type: PNP configuration
Maximum Collector Current: 600 mA
Collector-Emitter Breakdown Voltage: 40 V
Vce Saturation: 750 mV @ 50 mA, 500 mA
DC Current Gain (hFE): Minimum 100 @ 150 mA, 2 V
Maximum Power Dissipation: 625 mW
Transition Frequency: 200 MHz
Operating Temperature Range: -55°C to 150°C
Package: TO-92-3 Through Hole

All substitute parts listed maintain identical electrical performance specifications and physical packaging, ensuring direct functional replacement without circuit modification.

Parameter Comparison

Parameter	2N4403NLBU (onsemi)	2N4403BU (Fairchild)	2N4403TAR (onsemi)	2N4403TFR (onsemi)
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	600 mA	600 mA	600 mA	600 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V	40 V
Vce Saturation (Max) @ Ib, Ic	750 mV @ 50 mA, 500 mA	750 mV @ 50 mA, 500 mA	750 mV @ 50 mA, 500 mA	750 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150 mA, 2 V	100 @ 150 mA, 2 V	100 @ 150 mA, 2 V	100 @ 150 mA, 2 V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	200 MHz	200 MHz	200 MHz	200 MHz
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3	TO-92-3
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

2N4403BU (Fairchild Semiconductor): This substitute is manufactured by Fairchild Semiconductor and carries Active product status. It provides identical electrical specifications and TO-92-3 packaging. Selection of this part is appropriate for applications requiring cross-manufacturer sourcing flexibility.

2N4403TAR (onsemi): This substitute is manufactured by onsemi in Cut Tape (CT) packaging with formed leads and carries Active product status. It is RoHS3 compliant. This part is suitable for applications requiring onsemi manufacturer continuity and automated assembly processes compatible with cut tape delivery.

2N4403TFR (onsemi): This substitute is manufactured by onsemi in Cut Tape (CT) packaging with formed leads and carries Active product status. It is RoHS3 compliant. This part is suitable for applications requiring onsemi manufacturer continuity and automated assembly processes compatible with cut tape delivery.

All substitute parts maintain REACH Unaffected status and EAR99 export classification consistent with the original 2N4403NLBU.

Frequently Asked Questions (FAQ)

Q: Can the 2N4403BU directly replace the 2N4403NLBU in existing designs?

A: Yes. The 2N4403BU maintains identical electrical specifications across all critical parameters including collector current, breakdown voltage, saturation voltage, current gain, power dissipation, and transition frequency. The TO-92-3 package is mechanically identical, enabling direct board-level substitution without circuit modification.

Q: What is the difference between 2N4403TAR and 2N4403TFR?

A: Both 2N4403TAR and 2N4403TFR are onsemi-manufactured substitutes with identical electrical specifications and Active product status. The primary difference is packaging format: both are supplied in Cut Tape (CT) with formed leads. Inventory levels differ, with 2N4403TAR at 20,400 pieces and 2N4403TFR at 2,300 pieces.

Q: Why is the 2N4403NLBU classified as obsolete?

A: The 2N4403NLBU is designated obsolete by onsemi. However, direct substitutes with Active product status are available, ensuring continued design support and component availability.

Q: Are there packaging differences between the substitute parts?

A: The 2N4403BU is supplied in Bulk packaging. The 2N4403TAR and 2N4403TFR are supplied in Cut Tape (CT) packaging with formed leads. All three maintain the TO-92-3 Through Hole package specification. Selection depends on assembly process requirements and procurement format preferences.

Q: Do all substitute parts meet RoHS compliance?

A: The 2N4403TAR and 2N4403TFR are RoHS3 compliant. The 2N4403BU does not specify RoHS status in the provided data. For applications requiring RoHS compliance, 2N4403TAR or 2N4403TFR are the appropriate selections.

Q: What are the key electrical parameters that define substitution compatibility?

A: Substitution compatibility is determined by: PNP transistor type, 600 mA maximum collector current, 40 V collector-emitter breakdown voltage, 750 mV saturation voltage at specified conditions, minimum 100 hFE at 150 mA and 2 V, 625 mW maximum power dissipation, 200 MHz transition frequency, and -55°C to 150°C operating temperature range.

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