2N4403G Equivalent & Substitute Parts

Part Overview

The 2N4403G is a PNP bipolar junction transistor (BJT) manufactured by onsemi, rated for 40 V collector-emitter breakdown voltage and 600 mA maximum collector current. This through-hole component is housed in a TO-92 package and is suitable for general-purpose switching and amplification applications across an operating temperature range of -55°C to 150°C. The 2N4403G is classified as obsolete, making equivalent substitute parts necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	600	mA
Voltage - Collector Emitter Breakdown (Max)	40	V
Vce Saturation (Max) @ Ib, Ic	750 mV @ 50 mA, 500 mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150 mA, 2 V	—
Power - Max	625	mW
Frequency - Transition	200	MHz
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-92-3, TO-226-3	—

Substitute Part Grouping Explanation

Substitute parts for the 2N4403G are qualified based on electrical and mechanical parameter equivalence. The substitution criteria are:

Transistor Type: PNP configuration
Current Rating: 600 mA maximum collector current
Voltage Rating: 40 V collector-emitter breakdown voltage
Saturation Characteristics: 750 mV @ 50 mA, 500 mA
DC Current Gain: Minimum 100 @ 150 mA, 2 V
Power Dissipation: 625 mW maximum
Frequency Response: 200 MHz transition frequency
Temperature Range: -55°C to 150°C operating range
Package: TO-92-3 through-hole configuration

All substitute parts listed meet these electrical and mechanical specifications, ensuring functional interchangeability in circuit applications.

Parameter Comparison

Parameter	2N4403G (onsemi)	2N4403BU (Fairchild)	2N4403TAR (onsemi)
Transistor Type	PNP	PNP	PNP
Current - Collector (Ic) (Max)	600 mA	600 mA	600 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V
Vce Saturation (Max) @ Ib, Ic	750 mV @ 50 mA, 500 mA	750 mV @ 50 mA, 500 mA	750 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150 mA, 2 V	100 @ 150 mA, 2 V	100 @ 150 mA, 2 V
Power - Max	625 mW	625 mW	625 mW
Frequency - Transition	200 MHz	200 MHz	200 MHz
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3, TO-226-3	TO-92-3, TO-226-3	TO-92-3, TO-226-3
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

2N4403BU (Fairchild Semiconductor): This substitute is manufactured by Fairchild Semiconductor and carries Active product status. It is available in bulk packaging with 69,662 pieces in stock. The 2N4403BU meets all electrical and mechanical specifications of the 2N4403G and is suitable for direct substitution in new designs and production runs where component availability is a priority.

2N4403TAR (onsemi): This substitute is manufactured by onsemi, the original manufacturer of the 2N4403G, and carries Active product status. It is supplied in cut tape (CT) packaging with 20,400 pieces in stock. The 2N4403TAR includes RoHS3 compliance certification and is suitable for applications requiring regulatory compliance documentation. This part maintains design continuity with the original manufacturer while providing active product support.

Both substitutes are REACH Unaffected and classified under ECCN EAR99, matching the regulatory classification of the original part.

Frequently Asked Questions (FAQ)

Q: Can the 2N4403BU be used as a direct replacement for the 2N4403G?

A: Yes. The 2N4403BU meets all electrical specifications including collector current (600 mA), collector-emitter breakdown voltage (40 V), saturation characteristics, DC current gain, power dissipation, and frequency response. Both parts use the TO-92-3 through-hole package, enabling direct pin-compatible substitution.

Q: What is the difference between the 2N4403BU and 2N4403TAR?

A: Both parts are electrically equivalent. The primary differences are manufacturer (Fairchild vs. onsemi), packaging format (bulk vs. cut tape), and compliance certifications. The 2N4403TAR includes RoHS3 compliance documentation. Selection depends on procurement requirements, packaging preferences, and regulatory compliance needs.

Q: Why is the 2N4403G listed as obsolete?

A: The 2N4403G is classified as obsolete by onsemi. Active substitute parts (2N4403BU and 2N4403TAR) are available to support ongoing applications and new designs.

Q: Are there any package differences between these parts?

A: All three parts use the TO-92-3 through-hole package configuration. The 2N4403TAR is supplied with formed leads, while the 2N4403BU uses standard TO-92-3 leads. Both configurations are mechanically compatible with standard TO-92 footprints.

Q: What is the operating temperature range for these transistors?

A: All three parts operate across -55°C to 150°C (junction temperature), providing equivalent thermal performance for applications requiring extended temperature ranges.

Q: Are these parts RoHS compliant?

A: The 2N4403TAR is explicitly RoHS3 compliant. The 2N4403G and 2N4403BU do not list RoHS compliance in the provided specifications. For applications requiring RoHS certification, the 2N4403TAR is the appropriate selection.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message