2N4403-AP Equivalent & Substitute Parts

Part Overview

The 2N4403-AP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device features a 40 V collector-emitter breakdown voltage, 200 MHz transition frequency, and 600 mW maximum power dissipation in a through-hole TO-92 package. The 2N4403-AP is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. Substitute parts maintain electrical and mechanical compatibility while offering active product status and improved availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	40	V
Vce Saturation (Max) @ Ib, Ic	750 mV @ 50 mA, 500 mA	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150 mA, 2 V	—
Power - Max	600	mW
Frequency - Transition	200	MHz
Operating Temperature	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	—
RoHS Status	ROHS3 Compliant	—
REACH Status	REACH Unaffected	—

Substitute Part Grouping Explanation

Substitute parts for the 2N4403-AP are selected based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Electrical Parameters:

Transistor type: PNP configuration
Voltage rating: 40 V collector-emitter breakdown (maximum)
DC current gain (hFE): Minimum 100 @ 150 mA, 2 V
Saturation voltage: 750 mV @ 50 mA, 500 mA
Transition frequency: 200 MHz
Operating temperature range: -55°C to 150°C

Mechanical Parameters:

Package type: TO-92-3 (TO-226AA) through-hole configuration
Lead formation: Formed leads

Compliance Parameters:

RoHS3 compliance
REACH unaffected status

The substitute parts 2N4403TA and 2N4403TFR share the identical base product number (2N4403) and maintain all critical electrical specifications. Both substitute parts are manufactured by onsemi and carry active product status, ensuring long-term availability and supply chain reliability.

Parameter Comparison

Parameter	2N4403-AP (Main)	2N4403TA (Substitute)	2N4403TFR (Substitute)
Manufacturer	Micro Commercial Co	onsemi	onsemi
Product Status	Obsolete	Active	Active
Transistor Type	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V
Current - Collector (Ic) (Max)	Not specified	600 mA	600 mA
Vce Saturation (Max) @ Ib, Ic	750 mV @ 50 mA, 500 mA	750 mV @ 50 mA, 500 mA	750 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150 mA, 2 V	100 @ 150 mA, 2 V	100 @ 150 mA, 2 V
Power - Max	600 mW	625 mW	625 mW
Frequency - Transition	200 MHz	200 MHz	200 MHz
Operating Temperature	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

2N4403TA and 2N4403TFR are direct functional equivalents to the 2N4403-AP. Both substitute parts are manufactured by onsemi and maintain active product status, providing superior supply chain continuity compared to the obsolete 2N4403-AP. The electrical specifications are identical across all critical parameters: voltage rating, saturation characteristics, current gain, and frequency response. Both substitute parts meet or exceed the power rating of the original device (625 mW versus 600 mW) and maintain identical thermal operating ranges.

The primary distinction between the two substitute options is inventory availability. Selection between 2N4403TA and 2N4403TFR should be based on supply requirements and lead time considerations, as both parts are electrically and mechanically interchangeable with the 2N4403-AP.

All three parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for applications subject to environmental and hazardous substance restrictions.

Frequently Asked Questions (FAQ)

Q: Can 2N4403TA or 2N4403TFR be used as direct replacements for 2N4403-AP in existing designs?

A: Yes. Both substitute parts maintain identical electrical specifications for voltage rating, saturation voltage, current gain, and transition frequency. The TO-92-3 package and formed lead configuration are identical, enabling direct pin-compatible substitution without circuit modification.

Q: What is the difference between 2N4403TA and 2N4403TFR?

A: Both parts are manufactured by onsemi and share identical electrical and mechanical specifications. The difference is in packaging designation and inventory availability. 2N4403TA has 60,100 pieces in stock, while 2N4403TFR has 2,300 pieces in stock. Selection should be based on supply requirements.

Q: Why is the 2N4403-AP classified as obsolete?

A: The 2N4403-AP is listed as obsolete by Micro Commercial Co. Substitute parts from onsemi (2N4403TA and 2N4403TFR) carry active product status and are recommended for new designs and ongoing production to ensure long-term availability.

Q: Are there any thermal or performance differences between the main part and substitutes?

A: No. All three parts operate across the identical temperature range (-55°C to 150°C) and maintain the same transition frequency (200 MHz). The substitute parts have a slightly higher maximum power rating (625 mW versus 600 mW), which provides additional thermal margin.

Q: Do the substitute parts meet the same compliance standards?

A: Yes. Both 2N4403TA and 2N4403TFR are ROHS3 compliant and REACH unaffected, matching the compliance profile of the 2N4403-AP.

Q: What is the maximum collector current for these devices?

A: The substitute parts (2N4403TA and 2N4403TFR) specify a maximum collector current of 600 mA. The original 2N4403-AP does not explicitly specify maximum collector current in the provided parameters.

Q: Can these transistors be used in high-frequency switching applications?

A: Yes. All three parts feature a 200 MHz transition frequency, supporting high-frequency switching and amplification applications within the specified voltage and current ratings.

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