2N4402TFR Equivalent & Substitute Parts

Part Overview

The 2N4402TFR is a PNP bipolar junction transistor manufactured by onsemi, rated for 40 V collector-emitter breakdown voltage and 600 mA maximum collector current in a TO-92-3 through-hole package. This device is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to support ongoing design requirements, maintenance applications, and inventory management where the original part number may no longer be readily available through standard distribution channels.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	600	mA
Voltage - Collector Emitter Breakdown (Max)	40	V
Vce Saturation (Max)	750 mV @ 50 mA, 500 mA	—
DC Current Gain (hFE) (Min)	50 @ 150 mA, 2 V	—
Power - Max	625	mW
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—

Substitute Part Grouping Explanation

Substitution of the 2N4402TFR requires strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor polarity type (PNP vs. NPN)
Maximum collector current rating (600 mA)
Maximum collector-emitter breakdown voltage (40 V)
Maximum power dissipation (625 mW)
Operating temperature range (-55°C to 150°C)
Through-hole mounting configuration
TO-92-3 package form factor

The 2N4402TFR is a PNP transistor. Direct substitution requires an equivalent PNP device with identical or superior electrical ratings and the same physical package. The provided substitute list includes the 2N4401TFR, which is an NPN transistor. NPN and PNP transistors are not interchangeable due to opposite polarity requirements in circuit design. The 2N4401TFR cannot function as a direct substitute for the 2N4402TFR in applications requiring PNP polarity.

Parameter Comparison

Parameter	2N4402TFR (Main Part)	2N4401TFR (Substitute)	Compatibility
Transistor Type	PNP	NPN	Not Compatible
Current - Collector (Ic) (Max)	600 mA	600 mA	Equivalent
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	Equivalent
Vce Saturation (Max)	750 mV @ 50 mA, 500 mA	750 mV @ 50 mA, 500 mA	Equivalent
DC Current Gain (hFE) (Min)	50 @ 150 mA, 2 V	100 @ 150 mA, 1 V	Different Specifications
Power - Max	625 mW	625 mW	Equivalent
Operating Temperature	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Package / Case	TO-92-3	TO-92-3	Equivalent
Product Status	Obsolete	Active	Substitute Available

Engineering Selection Recommendations

The 2N4402TFR is classified as obsolete product status. The 2N4401TFR is an active product with current manufacturing and distribution support. However, direct substitution is not possible due to fundamental polarity differences. The 2N4402TFR is a PNP transistor, while the 2N4401TFR is an NPN transistor. These devices operate with opposite bias polarities and cannot be interchanged in circuit applications without complete redesign of the biasing network and signal path.

For applications requiring a PNP transistor with equivalent electrical specifications to the 2N4402TFR, alternative PNP devices must be sourced that match the specified ratings: 40 V collector-emitter breakdown voltage, 600 mA maximum collector current, 625 mW power dissipation, and TO-92-3 package configuration.

The 2N4401TFR is suitable only for applications originally designed for NPN transistor operation. The active product status and ROHS3 compliance of the 2N4401TFR provide advantages in terms of current availability and regulatory alignment, but these benefits do not override the polarity incompatibility.

Frequently Asked Questions (FAQ)

Q: Can the 2N4401TFR replace the 2N4402TFR in my circuit?

A: No. The 2N4402TFR is a PNP transistor, and the 2N4401TFR is an NPN transistor. These devices have opposite polarity and cannot be substituted for one another. Substitution would require complete redesign of the circuit biasing and signal routing.

Q: What is the primary difference between these two transistors?

A: The transistor type differs fundamentally. The 2N4402TFR operates as a PNP device, where the collector and emitter are p-type and n-type regions respectively. The 2N4401TFR operates as an NPN device with opposite doping. This polarity difference determines the direction of current flow and biasing requirements in circuit applications.

Q: Are the electrical ratings identical between these parts?

A: The maximum collector current (600 mA), collector-emitter breakdown voltage (40 V), maximum power dissipation (625 mW), and operating temperature range (-55°C to 150°C) are identical. The DC current gain (hFE) specifications differ: the 2N4402TFR specifies 50 minimum at 150 mA and 2 V, while the 2N4401TFR specifies 100 minimum at 150 mA and 1 V.

Q: Do both transistors use the same package?

A: Yes. Both the 2N4402TFR and 2N4401TFR use the TO-92-3 through-hole package with identical physical form factor and lead configuration. Package compatibility does not resolve the polarity incompatibility.

Q: What is the product status difference between these parts?

A: The 2N4402TFR is classified as obsolete, indicating discontinued manufacturing. The 2N4401TFR is classified as active, indicating current production and distribution availability. For new designs, active products are preferred due to ongoing supply chain support.

Q: Where should I look for a true substitute for the 2N4402TFR?

A: A true substitute for the 2N4402TFR must be a PNP transistor with matching electrical specifications: 40 V collector-emitter breakdown voltage, 600 mA maximum collector current, 625 mW power dissipation, and TO-92-3 package. The 2N4401TFR does not meet the polarity requirement and is not a valid substitute.

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