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2N4401_J61Z Equivalent & Substitute Parts
Part Overview
The 2N4401_J61Z is a through-hole NPN bipolar junction transistor manufactured by onsemi, rated for 40 V collector-emitter breakdown voltage and 600 mA maximum collector current. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design support and production requirements. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges to ensure functional equivalence in circuit applications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) (Max) | 600 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 | V |
| Vce Saturation (Max) @ Ib, Ic | 750 mV @ 50 mA, 500 mA | — |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150 mA, 1 V | — |
| Power - Max | 625 | mW |
| Frequency - Transition | 250 | MHz |
| Operating Temperature | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 (TO-226AA) | — |
Substitute Part Grouping Explanation
Substitute parts for the 2N4401_J61Z are qualified based on the following electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Transistor Type: NPN configuration
- Maximum Collector Current (Ic): 600 mA minimum
- Collector-Emitter Breakdown Voltage (Vce(BR)CEO): 40 V minimum
- Vce Saturation: 750 mV @ 50 mA, 500 mA
- DC Current Gain (hFE): 100 minimum @ 150 mA, 1 V
- Maximum Power Dissipation: 625 mW minimum
- Transition Frequency: 250 MHz minimum
- Operating Temperature Range: -55°C to 150°C
Mechanical Compatibility Criteria:
- Mounting Type: Through Hole
- Package Type: TO-92-3 (TO-226AA) with formed leads
Substitute parts must satisfy all electrical parameters at or above the specified values and maintain identical mechanical packaging to ensure direct circuit board compatibility without layout modifications.
Parameter Comparison
| Parameter | 2N4401_J61Z (Main) | 2N4401BU (Substitute) | 2N4401-AP (Substitute) |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Micro Commercial Co |
| Product Status | Obsolete | Active | Obsolete |
| Transistor Type | NPN | NPN | NPN |
| Current - Collector (Ic) (Max) | 600 mA | 600 mA | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V | 40 V | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 750 mV @ 50 mA, 500 mA | 750 mV @ 50 mA, 500 mA | 750 mV @ 50 mA, 500 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150 mA, 1 V | 100 @ 150 mA, 1 V | 100 @ 150 mA, 1 V |
| Power - Max | 625 mW | 625 mW | 600 mW |
| Frequency - Transition | 250 MHz | 250 MHz | 250 MHz |
| Operating Temperature | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 (TO-226AA) | TO-92-3 (TO-226AA) | TO-92-3 (TO-226AA) |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
2N4401BU (onsemi): This substitute is the primary equivalent for the 2N4401_J61Z. The 2N4401BU maintains active product status with onsemi, ensuring long-term availability and supply chain stability. All electrical parameters are identical to the main part. The device carries ROHS3 compliance certification, meeting current environmental regulatory requirements. This part is suitable for new designs and production continuity where the obsolete 2N4401_J61Z requires replacement.
2N4401-AP (Micro Commercial Co): This substitute provides electrical equivalence with maximum power dissipation of 600 mW, which is 25 mW below the main part specification. The 2N4401-AP is classified as obsolete, similar to the main part, and therefore does not provide long-term supply assurance. This part carries ROHS3 compliance and REACH Unaffected status. Selection of this substitute should be limited to applications where the 600 mW power rating is sufficient and where supply availability from alternative sources is confirmed.
Frequently Asked Questions (FAQ)
Q: Can the 2N4401BU directly replace the 2N4401_J61Z without circuit modifications?
A: Yes. The 2N4401BU maintains identical electrical parameters (600 mA collector current, 40 V breakdown voltage, 625 mW power dissipation, 250 MHz transition frequency, and 100 minimum hFE) and identical TO-92-3 package configuration. Direct substitution is possible without circuit board layout changes.
Q: What is the primary advantage of selecting 2N4401BU over 2N4401-AP?
A: The 2N4401BU carries active product status from onsemi, ensuring continued manufacturing and supply availability. The 2N4401-AP is obsolete, presenting potential supply discontinuation risk. For production applications requiring long-term component availability, 2N4401BU is the preferred selection.
Q: Does the 2N4401-AP meet the power dissipation requirements of the original design?
A: The 2N4401-AP is rated for 600 mW maximum power dissipation, compared to 625 mW for the 2N4401_J61Z. Applications operating at or near the 625 mW limit may exceed the 2N4401-AP rating. Circuit analysis is required to confirm whether the 25 mW reduction is acceptable for the specific application.
Q: Are there packaging differences between the substitute parts and the main part?
A: No. All three parts (2N4401_J61Z, 2N4401BU, and 2N4401-AP) use the TO-92-3 (TO-226AA) through-hole package with formed leads. Pin configuration and board footprint are identical, enabling direct mechanical substitution.
Q: What compliance certifications apply to the substitute parts?
A: Both 2N4401BU and 2N4401-AP carry ROHS3 compliance and REACH Unaffected status. These certifications confirm compliance with current environmental and hazardous substance regulations applicable to electronic components.
Q: Are the DC current gain specifications identical across all three parts?
A: Yes. All three parts specify a minimum DC current gain (hFE) of 100 at 150 mA collector current and 1 V collector-emitter voltage. Saturation voltage characteristics are also identical at 750 mV @ 50 mA, 500 mA.
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