2N4400-AP Equivalent & Substitute Parts

Part Overview

The 2N4400-AP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, rated for 40 V collector-emitter breakdown voltage and 600 mA maximum collector current in a TO-92 through-hole package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. The 625 mW power rating and -55°C to 150°C operating temperature range define its application envelope for small-signal switching and amplification circuits.

Substiute Parts

2N4400-AP
Micro Commercial CoIn Stock: 7372N4400-AP Datasheet
2N4400-AP
Current Part
KSP2222ATA
Fairchild SemiconductorIn Stock: 55246KSP2222ATA Datasheet
KSP2222ATA
Direct
2N4401TAR
onsemiIn Stock: 401762N4401TAR Datasheet
2N4401TAR
Similar
PN2222TA
onsemiIn Stock: 4582PN2222TA Datasheet
PN2222TA
Similar
PN2222TF
Fairchild SemiconductorIn Stock: 64925PN2222TF Datasheet
PN2222TF
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 40 V
Current - Collector (Ic) (Max) 600 mA
Power - Max 625 mW
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 150mA, 1V
Operating Temperature -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution of the 2N4400-AP is determined by strict equivalence in the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor type: NPN
  • Collector-emitter breakdown voltage: 40 V minimum
  • Maximum collector current: 600 mA minimum
  • Maximum power dissipation: 625 mW minimum
  • Package type: TO-92-3 through-hole
  • Mounting configuration: Through hole

Substitution Categories:

Direct Equivalents (40 V Rating): Parts meeting all primary criteria with 40 V or higher collector-emitter breakdown voltage are classified as direct equivalents. These include KSP2222ATA and 2N4401TAR, both rated for 40 V operation with identical current and power specifications.

Voltage-Derated Substitutes (30 V Rating): Parts rated for 30 V collector-emitter breakdown voltage, including PN2222TA and PN2222TF, operate within reduced voltage margins. These substitutes are applicable only in circuits where the maximum operating voltage does not exceed 30 V. All other electrical parameters remain equivalent.

Parameter Comparison

Parameter 2N4400-AP KSP2222ATA 2N4401TAR PN2222TA PN2222TF
Manufacturer Micro Commercial Co Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Active Active Last Time Buy Active
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 30 V 30 V
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA 600 mA
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA 1V @ 50mA, 500mA 750mV @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 150mA, 1V 100 @ 150mA, 10V 100 @ 150mA, 1V 100 @ 150mA, 10mV 100 @ 150mA, 10mV
Operating Temperature -55 to 150°C 150°C -55 to 150°C 150°C 150°C
Package / Case TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3
RoHS Status ROHS3 Compliant Not specified ROHS3 Compliant ROHS3 Compliant Not specified

Engineering Selection Recommendations

For Direct Replacement (40 V Applications):

KSP2222ATA and 2N4401TAR are the primary substitutes for the 2N4400-AP. Both maintain the 40 V collector-emitter breakdown voltage specification. KSP2222ATA is manufactured by Fairchild Semiconductor and carries active product status with 55,200 units in stock. The 2N4401TAR is manufactured by onsemi, also active, with 40,100 units available. Both are ROHS3 compliant and suitable for applications requiring the full 40 V rating.

For Voltage-Derated Applications (30 V Maximum):

PN2222TA and PN2222TF are applicable only in circuits where the maximum operating voltage does not exceed 30 V. PN2222TF, manufactured by Fairchild Semiconductor, is active with 64,868 units in stock. PN2222TA, manufactured by onsemi, is classified as Last Time Buy with 4,556 units available. Both are ROHS3 compliant.

Product Status Considerations:

The 2N4400-AP is obsolete. KSP2222ATA and 2N4401TAR are active products with established supply chains. PN2222TA is Last Time Buy, indicating limited future availability. PN2222TF remains active with the highest inventory level among all substitutes.

Compliance and Certification:

All substitute parts carry ROHS3 compliance. The 2N4401TAR and PN2222TA include REACH Unaffected status. All parts are classified under ECCN EAR99 for export control purposes.

Frequently Asked Questions (FAQ)

Q: Can KSP2222ATA directly replace the 2N4400-AP in all applications?

A: KSP2222ATA meets all primary electrical and mechanical substitution criteria. Both are rated for 40 V collector-emitter breakdown voltage, 600 mA maximum collector current, and 625 mW power dissipation in TO-92-3 packages. The primary difference is that KSP2222ATA specifies a maximum operating temperature of 150°C without a lower temperature limit, whereas the 2N4400-AP operates from -55°C to 150°C. Applications requiring operation below 0°C require verification of KSP2222ATA's low-temperature performance specifications.

Q: What is the difference between the 40 V and 30 V rated substitutes?

A: The 2N4400-AP, KSP2222ATA, and 2N4401TAR are all rated for 40 V maximum collector-emitter breakdown voltage. The PN2222TA and PN2222TF are rated for 30 V. This 10 V difference represents the maximum voltage that can be applied between the collector and emitter terminals. In circuits operating above 30 V, only the 40 V rated parts are suitable.

Q: Are there differences in saturation voltage between substitutes?

A: Yes. The 2N4400-AP and 2N4401TAR specify 750 mV maximum saturation voltage at 50 mA base current and 500 mA collector current. The KSP2222ATA, PN2222TA, and PN2222TF specify 1 V under the same conditions. This 250 mV difference may affect switching speed and power dissipation in saturation-mode applications.

Q: What is the significance of the DC current gain (hFE) differences?

A: The 2N4400-AP specifies a minimum hFE of 50 at 150 mA collector current and 1 V collector-emitter voltage. All substitute parts specify a minimum hFE of 100 at 150 mA, representing a 2:1 improvement in current gain. Higher current gain reduces base drive requirements and improves switching efficiency. Circuits designed for the lower hFE of the 2N4400-AP will operate with improved performance using substitutes with higher hFE.

Q: Can PN2222TA or PN2222TF be used in place of the 2N4400-AP?

A: PN2222TA and PN2222TF are suitable only in applications where the maximum operating voltage does not exceed 30 V. If the circuit design requires operation at voltages between 30 V and 40 V, these parts are not suitable. For circuits operating at 30 V or below, these parts meet all other electrical and mechanical requirements.

Q: What packaging options are available for these substitutes?

A: All substitute parts are available in TO-92-3 through-hole packages with formed leads, identical to the 2N4400-AP. KSP2222ATA is supplied in bulk packaging. 2N4401TAR is supplied in cut tape. PN2222TA and PN2222TF are supplied in cut tape and bulk, respectively. Packaging format does not affect electrical performance or pin compatibility.

Q: Which substitute offers the best long-term availability?

A: PN2222TF, manufactured by Fairchild Semiconductor, is active with 64,868 units in stock, the highest inventory level among all substitutes. KSP2222ATA and 2N4401TAR are also active with substantial inventory. PN2222TA is classified as Last Time Buy, indicating limited future availability and should not be selected for new designs requiring long-term supply.

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