Equivalent & Substitute Parts for 2N4033 W/GOLD PNP Bipolar Transistor

Part Overview

The 2N4033 W/GOLD is a PNP bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp, housed in a TO-39 metal can package. This component is rated for 80V collector-emitter breakdown voltage and 1A maximum collector current, with a maximum power dissipation of 800mW. The part is classified as obsolete, necessitating identification of active equivalent components for ongoing design support and procurement continuity. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	-
Voltage - Collector Emitter Breakdown (Max)	80	V
Current - Collector (Ic) (Max)	1	A
Power - Max	800	mW
Package / Case	TO-205AD, TO-39-3 Metal Can	-
Mounting Type	Through Hole	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution eligibility for the 2N4033 W/GOLD is determined by the following mandatory parameters:

Electrical Compatibility Criteria:

Transistor Type: PNP (required match)
Voltage - Collector Emitter Breakdown (Max): 80V (minimum requirement)
Current - Collector (Ic) (Max): 1A (minimum requirement)
Package / Case: TO-205AD or TO-39-3 Metal Can (required match)
Mounting Type: Through Hole (required match)

Identified Substitutes:

The 2N4033 manufactured by Microchip Technology and the 2N4236 manufactured by Microchip Technology both satisfy the core electrical and mechanical compatibility requirements. Both parts are active products with current manufacturing status, providing long-term availability compared to the obsolete Central Semiconductor Corp version.

Parameter Comparison

Parameter	2N4033 W/GOLD (Central Semiconductor)	2N4033 (Microchip Technology)	2N4236 (Microchip Technology)
Product Status	Obsolete	Active	Active
Transistor Type	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	80V	80V	80V
Current - Collector (Ic) (Max)	1A	1A	1A
Vce Saturation (Max) @ Ib, Ic	-	1V @ 100mA, 1A	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	-	10µA (ICBO)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	-	100 @ 100mA, 5V	30 @ 250mA, 1V
Power - Max	800mW	800mW	1W
Operating Temperature	-	-55°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Package / Case	TO-205AD, TO-39-3 Metal Can	TO-205AD, TO-39-3 Metal Can	TO-205AD, TO-39-3 Metal Can
Mounting Type	Through Hole	Through Hole	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99	EAR99

Engineering Selection Recommendations

Primary Substitute: 2N4033 (Microchip Technology)

The Microchip Technology 2N4033 is the direct equivalent to the obsolete Central Semiconductor 2N4033 W/GOLD. This part maintains identical electrical ratings (80V, 1A, 800mW) and identical package configuration (TO-39). The part is currently in active production status with 9672 units in stock, ensuring procurement availability. This substitute is the preferred choice for direct replacement in existing designs.

Secondary Substitute: 2N4236 (Microchip Technology)

The 2N4236 meets all mandatory electrical and mechanical compatibility criteria. It provides enhanced performance characteristics: increased maximum power dissipation (1W versus 800mW), improved Vce saturation performance (600mV versus 1V), and extended lower operating temperature range (-65°C versus -55°C). The 2N4236 is suitable for applications requiring higher power handling or improved saturation characteristics. This part is currently in active production with 1251 units in stock.

Both substitute parts carry identical compliance certifications (REACH Unaffected, EAR99, MSL 1) and are RoHS non-compliant, consistent with the original component classification.

Frequently Asked Questions (FAQ)

Q: Can the 2N4033 from Microchip Technology be used as a direct replacement for the obsolete 2N4033 W/GOLD from Central Semiconductor?

A: Yes. Both parts are PNP transistors with identical electrical ratings (80V breakdown voltage, 1A maximum collector current, 800mW power dissipation) and identical TO-39 package configuration. The Microchip version is the active production equivalent.

Q: What is the difference between the 2N4033 and 2N4236 substitutes?

A: Both parts meet the core compatibility requirements. The 2N4236 offers higher maximum power dissipation (1W versus 800mW), lower Vce saturation voltage (600mV versus 1V), and extended lower operating temperature range (-65°C versus -55°C). Selection depends on application-specific performance requirements.

Q: Are the substitute parts available in the same TO-39 package?

A: Yes. Both the 2N4033 and 2N4236 from Microchip Technology are supplied in TO-205AD (TO-39-3 Metal Can) package, identical to the original component.

Q: What compliance certifications apply to the substitute parts?

A: Both substitute parts carry REACH Unaffected status and EAR99 ECCN classification, matching the original component. Both are RoHS non-compliant. Moisture sensitivity level is MSL 1 (Unlimited) for all parts.

Q: Are there inventory considerations for selecting between the two substitutes?

A: The 2N4033 (Microchip) has 9672 units in stock, while the 2N4236 has 1251 units in stock. Both represent adequate inventory levels for procurement planning.

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