2N4033 Equivalent & Substitute Parts

Part Overview

The 2N4033 is a PNP bipolar junction transistor (BJT) rated for 80 V collector-emitter breakdown voltage and 1 A maximum collector current in a Through Hole TO-39 metal can package. This device is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling capability with 800 mW power dissipation.

The original onsemi 2N4033 carries an Obsolete product status. Locating active production equivalents is necessary to ensure long-term component availability, supply chain continuity, and access to current manufacturing documentation and support.

Substiute Parts

2N4033
onsemiIn Stock: 97282N4033 Datasheet
2N4033
Current Part
2N4033
Microchip TechnologyIn Stock: 97602N4033 Datasheet
2N4033
Direct

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Power - Max 800 mW
Vce Saturation (Max) @ Ib, Ic 1 V @ 100 mA, 1 A
DC Current Gain (hFE) Min @ Ic, Vce 75 @ 100 µA, 5 V
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2N4033 is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Criteria:

  • Transistor polarity: PNP configuration
  • Maximum collector current: 1 A
  • Collector-emitter breakdown voltage: 80 V
  • Maximum power dissipation: 800 mW
  • Saturation voltage: 1 V @ 100 mA, 1 A
  • DC current gain (hFE): minimum 75 @ 100 µA, 5 V

Mechanical Criteria:

  • Package type: TO-39 metal can (TO-205AD)
  • Mounting: Through Hole
  • Moisture sensitivity: MSL 1 (Unlimited)

The Microchip Technology 2N4033 meets all specified electrical and mechanical parameters and maintains identical package configuration. This part is classified as Active product status, ensuring current availability and manufacturing support.

Parameter Comparison

Parameter onsemi 2N4033 (Original) Microchip Technology 2N4033 (Substitute)
Transistor Type PNP PNP
Current - Collector (Ic) Max 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Power - Max 800 mW 800 mW
Vce Saturation (Max) @ Ib, Ic 1 V @ 100 mA, 1 A 1 V @ 100 mA, 1 A
DC Current Gain (hFE) Min @ Ic, Vce 75 @ 100 µA, 5 V 100 @ 100 mA, 5 V
Current - Collector Cutoff (Max) Not specified 10 µA (ICBO)
Operating Temperature Not specified −55°C to 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Product Status Obsolete Active
RoHS Status RoHS non-compliant RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The Microchip Technology 2N4033 is the direct functional equivalent for the obsolete onsemi 2N4033. Both parts share identical electrical ratings and mechanical packaging, ensuring pin-for-pin and functional compatibility in existing circuit designs.

Product Status Consideration: The onsemi part is classified as Obsolete, indicating discontinued production and limited future availability. The Microchip Technology variant maintains Active product status, confirming ongoing manufacturing, technical support, and supply chain accessibility.

Compliance Status: Both parts carry identical RoHS non-compliant and REACH Unaffected designations. No compliance advantage exists between the two variants. Selection should be based on supply availability and lead time requirements.

Performance Enhancement: The Microchip Technology 2N4033 provides specified operating temperature range (−55°C to 200°C) and collector cutoff current (10 µA ICBO), parameters not documented for the original part. The DC current gain specification (100 @ 100 mA, 5 V) exceeds the minimum requirement (75 @ 100 µA, 5 V), providing improved gain margin.

Frequently Asked Questions (FAQ)

Q: Can the Microchip Technology 2N4033 replace the onsemi 2N4033 in existing designs?

A: Yes. Both parts are electrically and mechanically equivalent. Identical maximum ratings for collector current (1 A), collector-emitter breakdown voltage (80 V), power dissipation (800 mW), and saturation voltage (1 V @ 100 mA, 1 A) ensure direct substitution without circuit modification.

Q: What is the primary reason to switch from the onsemi to the Microchip Technology variant?

A: The onsemi 2N4033 is Obsolete, indicating end-of-life status and declining availability. The Microchip Technology 2N4033 maintains Active production status, ensuring reliable long-term supply and continued manufacturer support.

Q: Are there package differences between the two parts?

A: No. Both parts use identical TO-39 metal can packaging (TO-205AD designation) with Through Hole mounting. Pin configuration and physical dimensions are identical, allowing direct socket replacement.

Q: Does the Microchip Technology part have better performance specifications?

A: The Microchip Technology variant provides documented operating temperature range (−55°C to 200°C) and collector cutoff current specification (10 µA ICBO). The DC current gain (100 @ 100 mA, 5 V) exceeds the minimum requirement, offering improved gain margin. These enhancements do not alter functional compatibility but provide additional design margin.

Q: Are there compliance or certification differences?

A: Both parts carry identical RoHS non-compliant and REACH Unaffected designations. No compliance advantage exists between variants. Selection should be based on supply chain requirements and availability.

Q: What is the moisture sensitivity level for both parts?

A: Both the onsemi and Microchip Technology 2N4033 are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

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