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2N3906_J18Z Equivalent & Substitute Parts
Part Overview
The 2N3906_J18Z is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 200 mA, collector-emitter breakdown voltage of 40 V, and a transition frequency of 250 MHz. The component is housed in a TO-92-3 through-hole package suitable for through-hole PCB assembly.
The 2N3906_J18Z is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor topology.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) (Max) | 200 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 | V |
| Vce Saturation (Max) @ Ib, Ic | 400 mV @ 5 mA, 50 mA | — |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10 mA, 1 V | — |
| Power - Max | 625 | mW |
| Frequency - Transition | 250 | MHz |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 (TO-226AA) | — |
Substitute Part Grouping Explanation
Substitute parts for the 2N3906_J18Z are identified based on electrical and mechanical parameter equivalence. The substitution criteria are:
Electrical Parameters (Must Match):
- Transistor Type: PNP
- Maximum Collector Current (Ic): 200 mA
- Collector-Emitter Breakdown Voltage: 40 V
- Vce Saturation: 400 mV @ 5 mA, 50 mA
- DC Current Gain (hFE): 100 (minimum) @ 10 mA, 1 V
- Maximum Power Dissipation: 625 mW
- Transition Frequency: 250 MHz
- Operating Temperature Range: -55°C to 150°C
Mechanical Parameters (Must Match):
- Mounting Type: Through Hole
- Package / Case: TO-92-3 (TO-226AA)
All substitute parts listed maintain identical electrical and mechanical specifications, ensuring direct functional equivalence in circuit applications.
Parameter Comparison
| Parameter | 2N3906_J18Z (onsemi) | 2N3906BU (Fairchild) | 2N3906TF (onsemi) |
|---|---|---|---|
| Transistor Type | PNP | PNP | PNP |
| Current - Collector (Ic) (Max) | 200 mA | 200 mA | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V | 40 V | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 400 mV @ 5 mA, 50 mA | 400 mV @ 5 mA, 50 mA | 400 mV @ 5 mA, 50 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10 mA, 1 V | 100 @ 10 mA, 1 V | 100 @ 10 mA, 1 V |
| Power - Max | 625 mW | 625 mW | 625 mW |
| Frequency - Transition | 250 MHz | 250 MHz | 250 MHz |
| Operating Temperature Range | -55°C to 150°C | -55°C to 150°C | -55°C to 150°C |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
| Product Status | Obsolete | Active | Active |
Engineering Selection Recommendations
2N3906BU (Fairchild Semiconductor): This substitute is manufactured by Fairchild Semiconductor and maintains active product status. All electrical and mechanical parameters are identical to the 2N3906_J18Z. This part is suitable for direct replacement in applications requiring PNP transistor functionality with the specified electrical characteristics. Inventory availability is substantial at 50,200 pieces.
2N3906TF (onsemi): This substitute is manufactured by onsemi, the original manufacturer of the 2N3906_J18Z, and maintains active product status. All electrical and mechanical parameters are identical. The 2N3906TF is supplied in cut tape packaging with formed leads, distinguishing it from the 2N3906_J18Z. This part is ROHS3 compliant and suitable for direct replacement. Inventory availability is 1,300 pieces.
Both substitute parts satisfy the electrical and mechanical requirements for direct substitution. Selection between them may be based on packaging format preference, lead forming requirements, compliance certifications, and supply chain considerations.
Frequently Asked Questions (FAQ)
Q: Can the 2N3906BU replace the 2N3906_J18Z in existing designs?
A: Yes. The 2N3906BU is electrically and mechanically equivalent to the 2N3906_J18Z. Both devices are PNP transistors with identical maximum ratings, saturation characteristics, current gain specifications, and TO-92-3 through-hole packaging. Direct substitution is supported.
Q: What is the difference between the 2N3906TF and 2N3906_J18Z?
A: The 2N3906TF and 2N3906_J18Z are electrically identical PNP transistors with matching electrical specifications. The primary difference is packaging format: the 2N3906TF is supplied in cut tape with formed leads, while the 2N3906_J18Z uses standard through-hole packaging. Both use the TO-92-3 package.
Q: Are there compliance or certification differences between these parts?
A: The 2N3906TF is ROHS3 compliant. All three parts are REACH unaffected and carry EAR99 export classification. Compliance requirements for specific applications should be evaluated based on end-use specifications.
Q: Why is the 2N3906_J18Z classified as obsolete?
A: The 2N3906_J18Z is listed as obsolete by onsemi. The 2N3906BU (Fairchild) and 2N3906TF (onsemi) maintain active product status and are recommended for new designs and ongoing production support.
Q: Can these parts be used interchangeably in PCB assembly?
A: Yes, for through-hole assembly applications. All three parts use the TO-92-3 package and are mounted through holes. The 2N3906TF features formed leads, which may affect insertion into PCB holes depending on hole diameter and lead forming specifications. Standard TO-92-3 through-hole assembly processes support all three parts.
Q: What is the maximum operating temperature for these transistors?
A: All three parts operate across a junction temperature range of -55°C to 150°C, supporting industrial and extended temperature applications.
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