2N3906G Equivalent & Substitute Parts

Part Overview

The 2N3906G is a PNP bipolar junction transistor (BJT) manufactured by onsemi, rated for 40 V collector-emitter breakdown voltage and 200 mA maximum collector current. This device is packaged in a TO-92 through-hole configuration and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and repair applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	200	mA
Voltage - Collector Emitter Breakdown (Max)	40	V
Vce Saturation (Max)	400 mV @ 5 mA, 50 mA	—
DC Current Gain (hFE) Min	100 @ 10 mA, 1 V	—
Power - Max	625	mW
Frequency - Transition	250	MHz
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-92-3, TO-226-3	—

Substitute Part Grouping Explanation

Substitution of the 2N3906G is determined by strict electrical and mechanical parameter matching across the following criteria:

Electrical Parameters (Must Match):

Transistor Type: PNP
Maximum Collector Current (Ic): 200 mA
Collector-Emitter Breakdown Voltage: 40 V
Vce Saturation: 400 mV @ 5 mA, 50 mA
DC Current Gain (hFE): 100 minimum @ 10 mA, 1 V
Transition Frequency: 250 MHz
Operating Temperature Range: -55°C to 150°C

Mechanical Parameters (Must Match):

Mounting Type: Through Hole
Package / Case: TO-92-3 or TO-226-3

The identified substitute parts 2N3906BU and 2N3906-AP meet all electrical and mechanical requirements for direct substitution with the 2N3906G. Both parts maintain identical electrical specifications and compatible package configurations.

Parameter Comparison

Parameter	2N3906G (onsemi)	2N3906BU (Fairchild)	2N3906-AP (MCC)
Transistor Type	PNP	PNP	PNP
Current - Collector (Ic) Max	200 mA	200 mA	200 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V
Vce Saturation (Max)	400 mV @ 5 mA, 50 mA	400 mV @ 5 mA, 50 mA	400 mV @ 5 mA, 50 mA
DC Current Gain (hFE) Min	100 @ 10 mA, 1 V	100 @ 10 mA, 1 V	100 @ 10 mA, 1 V
Power - Max	625 mW	625 mW	600 mW
Frequency - Transition	250 MHz	250 MHz	250 MHz
Operating Temperature Range	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3, TO-226-3	TO-92-3, TO-226-3	TO-92-3, TO-226-3
Product Status	Obsolete	Active	Obsolete

Engineering Selection Recommendations

2N3906BU (Fairchild Semiconductor) is the primary recommended substitute for the 2N3906G. This part maintains active product status, ensuring ongoing availability and manufacturing support. All electrical and mechanical parameters are identical to the original 2N3906G. The 2N3906BU is supplied in TO-92-3 package configuration and carries REACH compliance certification.

2N3906-AP (Micro Commercial Co) is an alternative substitute that meets all electrical specifications and package requirements. This part is classified as obsolete and carries RoHS3 compliance. The maximum power rating is 600 mW compared to 625 mW for the 2N3906G and 2N3906BU; however, this difference does not affect substitution eligibility within standard application parameters.

Selection between 2N3906BU and 2N3906-AP should prioritize 2N3906BU due to its active product status and superior long-term availability assurance.

Frequently Asked Questions (FAQ)

Q: Can the 2N3906BU directly replace the 2N3906G without circuit modification?

A: Yes. The 2N3906BU is electrically and mechanically equivalent to the 2N3906G across all specified parameters, including collector current, breakdown voltage, saturation characteristics, current gain, and operating temperature range. No circuit modifications are required.

Q: What is the difference between the 2N3906-AP and 2N3906BU?

A: Both parts meet the electrical specifications of the 2N3906G. The primary difference is product status: 2N3906BU is active, while 2N3906-AP is obsolete. Additionally, 2N3906-AP has a maximum power rating of 600 mW versus 625 mW for 2N3906BU. Both are supplied in compatible TO-92-3 packages.

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three parts (2N3906G, 2N3906BU, and 2N3906-AP) use TO-92-3 or TO-226-3 package configurations with identical through-hole mounting. Pin assignments and physical dimensions are compatible for direct board-level substitution.

Q: Does the 2N3906-AP's lower power rating (600 mW vs. 625 mW) affect substitution suitability?

A: The 600 mW rating of 2N3906-AP remains within acceptable substitution parameters for applications designed around the 2N3906G's 625 mW specification. However, 2N3906BU is preferred due to its matching 625 mW rating and active product status.

Q: What compliance certifications apply to these substitute parts?

A: 2N3906BU carries REACH compliance certification. 2N3906-AP carries RoHS3 compliance and REACH unaffected status. Both parts are classified under ECCN EAR99 and HTSUS 8541.21.0075.

Q: Why is the 2N3906G classified as obsolete?

A: The 2N3906G is listed as obsolete by onsemi. Active alternatives such as 2N3906BU from Fairchild Semiconductor are available to support continued design implementation and production requirements.

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