Equivalent & Substitute Parts Reference for 2N3866 TRAY

Part Overview

The Central Semiconductor Corp 2N3866 TRAY is a discrete RF NPN transistor designed for high-frequency applications, featuring 30V collector-emitter breakdown voltage, 400mA collector current, 500MHz transition frequency, and 5W maximum power, housed in a TO-39 through-hole package. With its obsolete product status, sourcing direct replacements is necessary for sustained engineering support. Compatible substitute parts must be selected strictly by matching the critical electrical and mechanical parameters provided.

Key Parameters

Parameter	2N3866 TRAY Value
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	500MHz
Gain	10dB
Power - Max	5W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 50mA, 5V
Current - Collector (Ic) (Max)	400mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can

Substitute Part Grouping Explanation

Substitute parts are identified based strictly on the following parameters: transistor type (NPN), voltage rating (collector-emitter breakdown), transition frequency, gain, maximum power, DC current gain, maximum collector current, operating temperature, mounting type, and package or case form factor. Only components matching or comparable in these parameters are considered as equivalent or substitutes within the Bipolar Transistor category.

Parameter Comparison

Parameter	2N3866 TRAY	2SC5065-Y(TE85L,F)	BFR360L3E6765XTMA1	MRF422	NSVMMBTH10LT1G
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	30V	12V	9V	35V	25V
Frequency - Transition	500MHz	7GHz	14GHz	-	650MHz
Gain	10dB	12dB ~ 17dB	11.5dB ~ 16dB	13dB	-
Power - Max	5W	100mW	210mW	150W	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 50mA, 5V	120 @ 10mA, 5V	90 @ 15mA, 3V	15 @ 5A, 5V	60 @ 4mA, 10V
Current - Collector (Ic) (Max)	400mA	30mA	35mA	20A	-
Operating Temperature	-65°C ~ 200°C	125°C	150°C	-	-55°C ~ 150°C
Mounting Type	Through Hole	Surface Mount	Surface Mount	Chassis Mount	Surface Mount
Package / Case	TO-205AD, TO-39-3 Metal Can	SC-70, SOT-323	SC-101, SOT-883	211-11, Style 2	TO-236-3, SC-59, SOT-23-3

Engineering Selection Recommendations

The 2N3866 TRAY is classified as obsolete; substitute selections listed are active products and have documented compliance, including RoHS3 status and unrestricted MSL level for handling. Substitute parts from onsemi, Toshiba Semiconductor and Storage, Infineon Technologies, and MACOM Technology Solutions all provide defined compliance status. Selection should be based on product status (active vs. obsolete) and verified component certifications as provided.

Frequently Asked Questions (FAQ)

Q: What are the primary substitution criteria for 2N3866 TRAY?
A: Substitutes must match the transistor type, voltage rating, transition frequency, gain, power rating, DC current gain, maximum collector current, operating temperature range, mounting type, and package/case as provided.

Q: How critical is package matching for substituting RF transistors?
A: Package and mounting type (e.g., TO-39 through-hole vs. surface mount packages) must be considered for mechanical compatibility with existing board designs.

Q: What compliance information should be considered when selecting substitute bipolar transistors?
A: RoHS3 compliance, MSL level, and product status (active/obsolete) are critical for ensuring regulatory requirements and supply chain reliability.

Q: Where are key electrical parameters found for substitution analysis?
A: Electrical parameters for substitution are limited to those explicitly provided: voltage, frequency, current, gain, and power specifications.

Q: Are operating temperature ranges important for equivalency?
A: Substitute selection must align with the specified operating temperature range to ensure reliability within the intended application environment.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message