2N3811 Equivalent & Substitute Parts

Part Overview

The 2N3811 is a dual PNP bipolar junction transistor (BJT) array manufactured by Central Semiconductor Corp, housed in a TO-78-6 metal can package. This component is classified as obsolete, with 852 units currently in stock. The 2N3811 is designed for applications requiring dual PNP transistor functionality with a maximum collector current of 50mA and collector-emitter breakdown voltage of 60V.

Due to the obsolete status of the 2N3811, equivalent substitute parts are necessary for new designs, production continuity, and long-term component availability. Active alternatives from Microchip Technology provide direct functional replacement while maintaining electrical and mechanical compatibility.

Substiute Parts

2N3811
Central Semiconductor CorpIn Stock: 8662N3811 Datasheet
2N3811
Current Part
2N3810
Microchip TechnologyIn Stock: 16152N3810 Datasheet
2N3810
MFR Recommended
2N3810L
Microchip TechnologyIn Stock: 8672N3810L Datasheet
2N3810L
MFR Recommended
JAN2N3810L
Microchip TechnologyIn Stock: 1096JAN2N3810L Datasheet
JAN2N3810L
MFR Recommended
JANS2N3810
Microchip TechnologyIn Stock: 1467JANS2N3810 Datasheet
JANS2N3810
MFR Recommended
JANTX2N3810L
Microchip TechnologyIn Stock: 857JANTX2N3810L Datasheet
JANTX2N3810L
MFR Recommended
JANTXV2N3810L
Microchip TechnologyIn Stock: 860JANTXV2N3810L Datasheet
JANTXV2N3810L
MFR Recommended

Key Parameters

Parameter Value
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) 300 @ 1mA, 5V
Power - Max 600mW
Frequency - Transition 100MHz
Operating Temperature -65°C ~ 200°C (TJ)
Package / Case TO-78-6 Metal Can
Mounting Type Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the 2N3811 is determined by strict electrical and mechanical parameter matching:

Critical Matching Parameters:

  • Transistor configuration: 2 PNP (Dual) array
  • Maximum collector current: 50mA
  • Collector-emitter breakdown voltage: 60V
  • Package type: TO-78-6 Metal Can
  • Mounting method: Through Hole
  • Operating temperature range: -65°C ~ 200°C

All substitute parts listed maintain these core electrical specifications and physical package compatibility. The substitute parts are manufactured by Microchip Technology and carry active product status, ensuring ongoing availability and support. Substitute variants include standard commercial grades (2N3810, 2N3810L) and military-qualified grades (JAN2N3810L, JANS2N3810, JANTX2N3810L, JANTXV2N3810L) with MIL-PRF-19500/336 qualification.

Parameter Comparison

Parameter 2N3811 2N3810 2N3810L JAN2N3810L JANS2N3810 JANTX2N3810L JANTXV2N3810L
Manufacturer Central Semiconductor Corp Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 50mA 50mA 50mA 50mA 50mA 50mA 50mA
Voltage - Collector Emitter Breakdown (Max) 60V 60V 60V 60V 60V 60V 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 100µA 250mV @ 100µA, 1mA 250mV @ 100µA, 1mA 250mV @ 100µA, 1mA 250mV @ 100µA, 1mA 250mV @ 100µA, 1mA 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V 150 @ 1mA, 5V 150 @ 1mA, 5V 150 @ 1mA, 5V 150 @ 1mA, 5V 150 @ 1mA, 5V 150 @ 1mA, 5V
Power - Max 600mW 350mW 350mW 350mW 350mW 350mW 350mW
Frequency - Transition 100MHz Not specified Not specified Not specified Not specified Not specified Not specified
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Package / Case TO-78-6 Metal Can TO-78-6 Metal Can TO-78-6 Metal Can TO-78-6 Metal Can TO-78-6 Metal Can TO-78-6 Metal Can TO-78-6 Metal Can
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Product Status Obsolete Active Active Active Active Active Active
Grade Commercial Commercial Commercial Military Military Military Military
Qualification Not specified Not specified Not specified MIL-PRF-19500/336 MIL-PRF-19500/336 MIL-PRF-19500/336 MIL-PRF-19500/336
RoHS Status RoHS non-compliant RoHS non-compliant RoHS non-compliant RoHS non-compliant Not specified RoHS non-compliant RoHS non-compliant

Engineering Selection Recommendations

Commercial Applications (Standard Grades): Select 2N3810 or 2N3810L for commercial applications requiring active product status and standard electrical performance. Both variants are manufactured by Microchip Technology and provide equivalent functionality to the obsolete 2N3811. These parts are suitable for new designs where military qualification is not required.

Military and Aerospace Applications: Select JAN2N3810L, JANS2N3810, JANTX2N3810L, or JANTXV2N3810L for applications requiring military-grade components with MIL-PRF-19500/336 qualification. These variants undergo additional screening and testing protocols and are appropriate for defense, aerospace, and other mission-critical applications.

Power Dissipation Consideration: The 2N3811 specifies a maximum power rating of 600mW, while all substitute parts specify 350mW. Applications operating near the 2N3811's maximum power rating require thermal analysis to confirm compatibility with the lower power rating of substitute parts.

Current Gain Variation: The 2N3811 specifies a minimum DC current gain (hFE) of 300 @ 1mA, 5V, while substitute parts specify 150 @ 1mA, 5V. Circuit designs dependent on the higher gain of the 2N3811 require verification that the lower gain of substitute parts does not affect circuit performance.

Leakage Current Difference: The 2N3811 specifies a maximum collector cutoff current (ICBO) of 10nA, while substitute parts specify 10µA. Applications sensitive to leakage current require evaluation of this 1000-fold difference.

Frequently Asked Questions (FAQ)

Q: Can 2N3810 directly replace 2N3811 in existing designs?

A: Direct replacement is possible for most applications due to identical package (TO-78-6), transistor configuration (2 PNP dual), maximum collector current (50mA), and collector-emitter breakdown voltage (60V). However, three parameter differences require verification: (1) Power dissipation is reduced from 600mW to 350mW; (2) DC current gain is reduced from 300 to 150; (3) Collector cutoff current increases from 10nA to 10µA. Circuit designs must be evaluated against these differences.

Q: What is the difference between commercial and military-grade substitutes?

A: Commercial grades (2N3810, 2N3810L) are standard production parts suitable for general applications. Military grades (JAN2N3810L, JANS2N3810, JANTX2N3810L, JANTXV2N3810L) carry MIL-PRF-19500/336 qualification, indicating compliance with military procurement standards and additional screening and testing. Military grades are required for defense, aerospace, and other mission-critical applications.

Q: Are all substitute parts in the same package?

A: Yes. All substitute parts use the TO-78-6 metal can package with through-hole mounting, identical to the 2N3811. Pin configuration and physical dimensions are compatible for direct board-level substitution.

Q: What does the "L" suffix indicate in 2N3810L?

A: The "L" suffix indicates a variant designation within the 2N3810 product line. Electrical specifications remain equivalent to 2N3810. The "L" variant is available in both commercial and military-qualified versions.

Q: Which substitute should be selected for new designs?

A: For new commercial designs, 2N3810 or 2N3810L are appropriate selections. For military or aerospace applications, select JAN2N3810L, JANS2N3810, JANTX2N3810L, or JANTXV2N3810L. All variants are active products with ongoing manufacturer support.

Q: How does the reduced power rating affect thermal design?

A: The 350mW rating of substitute parts is lower than the 2N3811's 600mW rating. Applications operating at high power dissipation must verify that thermal conditions remain within the 350mW limit. Thermal analysis or circuit redesign may be necessary for applications previously operating near the 600mW limit.

Q: Are there RoHS compliance differences between substitutes?

A: All parts listed are RoHS non-compliant. No RoHS-compliant variants are available within this substitute group. Applications requiring RoHS compliance require alternative component selection outside this family.

Request Quote (Ships tomorrow)