2N3810 Equivalent & Substitute Parts

Part Overview

The 2N3810 is a dual PNP bipolar junction transistor (BJT) array housed in a TO-78-6 metal can package. Manufactured by Central Semiconductor Corp, this component is classified as obsolete, which necessitates identification of active equivalent alternatives for ongoing design support and procurement. The 2N3810 operates at maximum collector current of 50mA, collector-emitter breakdown voltage of 60V, and maximum power dissipation of 600mW, making it suitable for low-power switching and amplification applications in legacy electronic systems.

Substiute Parts

2N3810

Central Semiconductor CorpIn Stock: 16622N3810 Datasheet

Current PartRFQ

2N3810

Microchip TechnologyIn Stock: 16152N3810 Datasheet

MFR RecommendedRFQ

2N3810L

Microchip TechnologyIn Stock: 8672N3810L Datasheet

MFR RecommendedRFQ

2N3810U

Microchip TechnologyIn Stock: 10282N3810U Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N3810 is determined by strict equivalence across the following critical parameters:

Electrical Parameters (Must Match):

• Transistor configuration: 2 PNP (Dual) array
• Maximum collector current: 50mA
• Collector-emitter breakdown voltage: 60V
• DC current gain (hFE): minimum 150 @ 1mA, 5V
• Vce saturation: 250mV @ specified bias conditions
• Operating temperature range: -65°C to 200°C

Mechanical Parameters (Must Match):

• Package type: TO-78-6 Metal Can
• Mounting: Through Hole

Compliance Parameters:

• RoHS Status: Non-compliant (consistent with original)
• Moisture Sensitivity Level: 1 (Unlimited)
• REACH Status: Unaffected

The substitute parts 2N3810, 2N3810L, and 2N3810U, all manufactured by Microchip Technology, maintain electrical and mechanical compatibility with the original Central Semiconductor Corp 2N3810. These alternatives are classified as Active products, ensuring continued availability and manufacturing support.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitutes (Microchip Technology):

The 2N3810, 2N3810L, and 2N3810U manufactured by Microchip Technology are direct functional equivalents to the obsolete Central Semiconductor Corp 2N3810. All three alternatives maintain identical electrical specifications for collector current, breakdown voltage, saturation voltage, and DC current gain. All are classified as Active products with confirmed inventory availability.

Compliance Considerations:

All substitute parts retain RoHS non-compliant status consistent with the original component. Moisture Sensitivity Level remains at 1 (Unlimited), indicating no special handling requirements. REACH status is Unaffected across all variants.

Power Dissipation Variance:

The Microchip variants specify 350mW maximum power dissipation compared to 600mW for the original Central Semiconductor part. This represents a reduction in rated power capacity. Applications operating at or near the 600mW limit of the original device require thermal analysis to confirm compatibility with the 350mW rating of Microchip substitutes.

Transition Frequency:

The original 2N3810 specifies 100MHz transition frequency. Microchip substitute datasheets do not provide transition frequency specifications. Applications dependent on high-frequency performance characteristics must reference complete Microchip device datasheets for detailed AC parameters.

Frequently Asked Questions (FAQ)

Q: Are the Microchip 2N3810, 2N3810L, and 2N3810U fully interchangeable?

A: Yes, within the electrical and mechanical parameters specified. All three maintain identical maximum collector current (50mA), breakdown voltage (60V), saturation voltage (250mV), DC current gain (150 minimum), operating temperature range (-65°C to 200°C), and TO-78-6 through-hole package configuration. Inventory availability differs: 2N3810 (1595 pcs), 2N3810L (846 pcs), 2N3810U (942 pcs).

Q: What is the significance of the suffix letters (L, U) in the part numbers?

A: The provided data does not specify the technical meaning of the L and U suffixes. Selection among 2N3810, 2N3810L, and 2N3810U should be based on availability and procurement requirements, as electrical specifications are identical.

Q: Can I use these substitutes in applications designed for 600mW power dissipation?

A: The Microchip variants are rated for 350mW maximum power dissipation, compared to 600mW for the original. Applications operating above 350mW require thermal analysis and potential circuit redesign to reduce power consumption or improve heat dissipation.

Q: Are there package alternatives to TO-78-6?

A: The provided substitute data specifies only TO-78-6 metal can through-hole packaging. No surface-mount or alternative package options are listed.

Q: What is the difference in collector cutoff current between the original and substitutes?

A: The original 2N3810 specifies 10nA maximum collector cutoff current (ICBO), while Microchip substitutes specify 10µA. This represents a 1000-fold increase in leakage current. Applications sensitive to leakage current performance require detailed circuit analysis.

Q: Are all variants RoHS compliant?

A: No. The original 2N3810 and all Microchip substitutes (2N3810, 2N3810L, 2N3810U) are classified as RoHS non-compliant. This status is consistent across all variants.