2N3807 Equivalent & Substitute Parts Reference

Part Overview

The 2N3807 is a dual PNP bipolar junction transistor (BJT) array manufactured by Central Semiconductor Corp, housed in a TO-78-6 metal can package. This component is rated for 60V collector-emitter breakdown voltage and 50mA maximum collector current, with a maximum power dissipation of 600mW. The 2N3807 is classified as obsolete, making equivalent substitute parts necessary for ongoing design support and production continuity. Substitute components must maintain electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

2N3807
Central Semiconductor CorpIn Stock: 9442N3807 Datasheet
2N3807
Current Part
2N3810
Microchip TechnologyIn Stock: 16152N3810 Datasheet
2N3810
MFR Recommended
2N3810L
Microchip TechnologyIn Stock: 8672N3810L Datasheet
2N3810L
MFR Recommended
2N3810U
Microchip TechnologyIn Stock: 10282N3810U Datasheet
2N3810U
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 50 mA
Voltage - Collector Emitter Breakdown (Max) 60 V
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V
Power - Max 600 mW
Frequency - Transition 100 MHz
Mounting Type Through Hole
Package / Case TO-78-6 Metal Can
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the 2N3807 is based on strict electrical and mechanical parameter matching. The following criteria determine compatibility:

Critical Matching Parameters:

  • Transistor configuration: 2 PNP (Dual) array
  • Maximum collector current: 50mA
  • Maximum collector-emitter breakdown voltage: 60V
  • Package type: TO-78-6 Metal Can
  • Mounting method: Through Hole

The substitute parts 2N3810, 2N3810L, and 2N3810U are manufactured by Microchip Technology and meet all critical electrical specifications. These parts maintain the same dual PNP configuration, identical voltage and current ratings, and identical package form factor. All substitute parts are classified as Active products, providing long-term availability and production support compared to the obsolete 2N3807.

Parameter Comparison

Parameter 2N3807 2N3810 2N3810L 2N3810U Unit
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 50 50 50 50 mA
Voltage - Collector Emitter Breakdown (Max) 60 60 60 60 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA 250mV @ 100µA, 1mA 250mV @ 100µA, 1mA mV
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) µA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V 150 @ 1mA, 5V 150 @ 1mA, 5V 150 @ 1mA, 5V
Power - Max 600 350 350 350 mW
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-78-6 Metal Can TO-78-6 Metal Can TO-78-6 Metal Can TO-78-6 Metal Can
Product Status Obsolete Active Active Active
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) °C
RoHS Status RoHS non-compliant RoHS non-compliant RoHS non-compliant RoHS non-compliant

Engineering Selection Recommendations

Product Status Consideration: The 2N3807 is classified as obsolete. The substitute parts 2N3810, 2N3810L, and 2N3810U are all classified as Active products manufactured by Microchip Technology, ensuring continued availability and manufacturing support.

Compliance and Certification: All parts (main and substitutes) share identical RoHS non-compliance status and REACH unaffected classification. Moisture sensitivity level is 1 (Unlimited) for all parts. ECCN classification is EAR99 for all components.

Electrical Compatibility: The substitute parts maintain the critical electrical specifications: 50mA maximum collector current, 60V maximum collector-emitter breakdown voltage, and identical dual PNP configuration. The DC current gain (hFE) of substitute parts is 150 @ 1mA, 5V, compared to 300 @ 1mA, 5V for the 2N3807. The maximum power dissipation of substitute parts is 350mW versus 600mW for the original part.

Mechanical Compatibility: All parts use identical TO-78-6 metal can packaging and through-hole mounting, ensuring direct physical compatibility in existing PCB layouts.

Frequently Asked Questions (FAQ)

Q: Can 2N3810, 2N3810L, and 2N3810U be used interchangeably with 2N3807?

A: Yes, within the specified electrical and mechanical parameters. All three substitute parts maintain the same dual PNP configuration, 50mA collector current rating, 60V breakdown voltage, and TO-78-6 package form factor. The primary difference is product status: the 2N3807 is obsolete while the substitutes are active products.

Q: What is the difference between 2N3810, 2N3810L, and 2N3810U?

A: All three parts are manufactured by Microchip Technology and share identical electrical specifications and package type. The suffix designations (standard, L, and U) typically indicate different manufacturing grades or temperature ranges, but the provided data shows identical operating temperature ranges (-65°C ~ 200°C TJ) for all three variants.

Q: Are there differences in power dissipation between the 2N3807 and substitute parts?

A: Yes. The 2N3807 has a maximum power dissipation of 600mW, while the 2N3810 series parts are rated at 350mW maximum. Designs must ensure that actual power dissipation does not exceed 350mW when using substitute parts.

Q: Does the DC current gain difference affect circuit operation?

A: The 2N3807 specifies a minimum DC current gain (hFE) of 300 @ 1mA, 5V, while substitute parts specify 150 @ 1mA, 5V. Circuit designs relying on specific gain characteristics must be evaluated to determine if the lower gain of substitute parts affects performance.

Q: Are the substitute parts RoHS compliant?

A: No. Both the 2N3807 and all substitute parts (2N3810, 2N3810L, 2N3810U) are classified as RoHS non-compliant. All parts share identical REACH unaffected status and EAR99 ECCN classification.

Q: What is the package compatibility between 2N3807 and substitute parts?

A: All parts use the TO-78-6 metal can package with through-hole mounting. Pin configuration and physical dimensions are identical, allowing direct replacement without PCB layout modifications.

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