2N3773 NPN Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The 2N3773 is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 140 V collector-emitter breakdown voltage and 16 A maximum collector current with 150 W power dissipation capability. The device is packaged in TO-3 (TO-204AA) chassis mount configuration and is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active manufacturers are necessary for ongoing design support and procurement continuity.

Substiute Parts

2N3773
STMicroelectronicsIn Stock: 15482N3773 Datasheet
2N3773
Current Part
2N3773G
onsemiIn Stock: 21572N3773G Datasheet
2N3773G
Direct
MJ15001G
onsemiIn Stock: 1206MJ15001G Datasheet
MJ15001G
Similar
MJ15015G
onsemiIn Stock: 200524MJ15015G Datasheet
MJ15015G
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Maximum Collector Current (Ic) 16 A
Collector-Emitter Breakdown Voltage (Max) 140 V
Maximum Power Dissipation 150 W
Package Type TO-3 (TO-204AA)
Mounting Type Chassis Mount / Through Hole
Operating Temperature Range Up to 200 °C (TJ)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the 2N3773 is determined by the following critical parameters: transistor type (NPN), package compatibility (TO-3/TO-204AA), collector-emitter breakdown voltage rating, maximum collector current capability, and power dissipation rating. Substitute parts must maintain electrical compatibility within the specified voltage and current ranges while supporting the same thermal and mechanical mounting requirements.

The substitute parts are grouped into two categories:

Direct Equivalent: Parts that match or exceed all primary electrical specifications and maintain identical package form factor.

Similar Specification: Parts that provide comparable electrical performance with minor deviations in secondary parameters such as transition frequency or saturation voltage characteristics, suitable for applications where exact parameter matching is not critical.

Parameter Comparison

Parameter 2N3773 (STMicroelectronics) 2N3773G (onsemi) MJ15001G (onsemi) MJ15015G (onsemi)
Transistor Type NPN NPN NPN NPN
Ic (Max) [A] 16 16 15 15
Vce Breakdown (Max) [V] 140 140 140 120
Power (Max) [W] 150 150 200 180
Vce Saturation (Max) [V] 4 @ 3.2A, 16A 1.4 @ 800mA, 8A 1 @ 400mA, 4A 5 @ 7A, 15A
DC Current Gain hFE (Min) 15 @ 8A, 4V 15 @ 8A, 4V 25 @ 4A, 2V 10 @ 4A, 2V
Ic Cutoff (Max) [mA/µA] 10 mA 10 mA 250 µA 100 µA
Frequency - Transition [MHz] 2 6
Operating Temperature [°C] Up to 200 -65 to 200 -65 to 200 -65 to 200
Package / Case TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3
Mounting Type Chassis Mount Through Hole Through Hole Through Hole
Product Status Obsolete Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

2N3773G (onsemi): This part is the primary direct equivalent for the 2N3773. It maintains identical electrical specifications including 16 A maximum collector current, 140 V breakdown voltage, and 150 W power rating. The 2N3773G is manufactured by onsemi with active product status, ensuring long-term availability and supply chain continuity. Both parts are ROHS3 compliant and share identical package specifications (TO-204AA/TO-3). The primary difference is mounting configuration (through hole versus chassis mount), which may require mechanical redesign depending on application requirements. This substitute is suitable for direct replacement in applications where the through-hole mounting configuration is acceptable.

MJ15001G (onsemi): This part provides comparable electrical performance with 15 A maximum collector current and 140 V breakdown voltage, matching the voltage rating of the 2N3773. The MJ15001G offers superior power dissipation capability (200 W versus 150 W) and improved saturation characteristics (1 V at specified conditions). The higher DC current gain (25 minimum) and lower cutoff current (250 µA) provide enhanced switching performance. This substitute is suitable for applications where the 1 A reduction in maximum collector current is acceptable and where improved thermal performance is beneficial.

MJ15015G (onsemi): This part operates at a reduced collector-emitter breakdown voltage of 120 V compared to the 2N3773 specification of 140 V. The MJ15015G is rated for 15 A maximum collector current and 180 W power dissipation. This substitute is applicable only in applications where the operating voltage does not exceed 120 V and where the 1 A reduction in collector current is acceptable. The higher transition frequency (6 MHz) may provide performance advantages in switching applications.

All substitute parts are ROHS3 compliant and REACH unaffected, maintaining regulatory compliance equivalent to the original 2N3773.

Frequently Asked Questions (FAQ)

Q: Can the 2N3773G directly replace the 2N3773 in all applications?

A: The 2N3773G provides electrical equivalence with identical voltage, current, and power ratings. However, the mounting configuration differs: the original 2N3773 uses chassis mount while the 2N3773G uses through-hole mounting. Mechanical redesign of the mounting structure may be required. Electrical performance is equivalent.

Q: What is the primary difference between the 2N3773 and MJ15001G?

A: The MJ15001G operates at the same 140 V breakdown voltage but is rated for 15 A maximum collector current (1 A less than the 2N3773). The MJ15001G provides superior power dissipation (200 W versus 150 W) and improved saturation characteristics. Selection depends on whether the application requires the full 16 A capability.

Q: Is the MJ15015G suitable as a substitute for the 2N3773?

A: The MJ15015G is suitable only for applications where the operating voltage does not exceed 120 V. The 2N3773 is rated for 140 V breakdown voltage, while the MJ15015G is rated for 120 V. Use of the MJ15015G in circuits designed for 140 V operation presents risk of device failure. The 1 A reduction in collector current (15 A versus 16 A) must also be verified against application requirements.

Q: Are all substitute parts available in the same package?

A: All substitute parts use the TO-3 (TO-204AA) package form factor. However, the original 2N3773 is configured as chassis mount, while all substitute parts are through-hole mounted. The physical package dimensions are identical, but the mounting interface differs. Mechanical adaptation may be necessary.

Q: What compliance certifications apply to these substitute parts?

A: All parts listed (2N3773, 2N3773G, MJ15001G, MJ15015G) are ROHS3 compliant and REACH unaffected. Regulatory compliance is maintained across all substitutes.

Q: Which substitute part offers the best thermal performance?

A: The MJ15001G provides the highest power dissipation rating at 200 W, compared to 150 W for the 2N3773 and 180 W for the MJ15015G. Applications requiring maximum thermal headroom should consider the MJ15001G.

Q: Can I use the MJ15015G in a 140 V circuit?

A: No. The MJ15015G is rated for maximum 120 V collector-emitter breakdown voltage. Using this device in a circuit designed for 140 V operation exceeds the device rating and creates risk of failure. The MJ15015G is suitable only for applications operating at 120 V or below.

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