2N3772 Equivalent & Substitute Parts

Part Overview

The 2N3772 is an NPN bipolar junction transistor manufactured by STMicroelectronics, designed for high-current switching and amplification applications. The device is rated for 60 V collector-emitter breakdown voltage and 20 A maximum collector current in a TO-3 chassis mount package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

2N3772
STMicroelectronicsIn Stock: 222902N3772 Datasheet
2N3772
Current Part
2N5885G
onsemiIn Stock: 8062N5885G Datasheet
2N5885G
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 60 V
Current - Collector (Ic) (Max) 20 A
Power - Max 150 W
Vce Saturation (Max) @ Ib, Ic 4V @ 4A, 20A V
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 10A, 4V
Frequency - Transition 200 kHz
Current - Collector Cutoff (Max) 10 mA
Package / Case TO-204AA, TO-3
Mounting Type Chassis Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 2N3772 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Voltage - Collector Emitter Breakdown rating must be equal to or greater than 60 V
  • Current - Collector (Ic) maximum rating must be equal to or greater than 20 A
  • Power dissipation capability must be equal to or greater than 150 W
  • Vce saturation characteristics must support the same operating conditions
  • DC current gain must meet or exceed the specified minimum

Mechanical Compatibility Criteria:

  • Package must be TO-3 or equivalent TO-204AA form factor
  • Mounting type must be compatible with chassis mount applications

The 2N5885G from onsemi meets these substitution criteria with enhanced electrical ratings and maintains package compatibility.

Parameter Comparison

Parameter 2N3772 (STMicroelectronics) 2N5885G (onsemi) Unit
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 60 60 V
Current - Collector (Ic) (Max) 20 25 A
Power - Max 150 200 W
Vce Saturation (Max) @ Ib, Ic 4V @ 4A, 20A 4V @ 6.25A, 25A V
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 10A, 4V 20 @ 10A, 4V
Current - Collector Cutoff (Max) 10 2 mA
Frequency - Transition 200 4000 kHz
Package / Case TO-204AA, TO-3 TO-204AA, TO-3
Mounting Type Chassis Mount Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

The 2N5885G is a direct electrical substitute for the 2N3772 with superior performance characteristics. Both devices are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Substitution Advantages:

  • Higher maximum collector current rating (25 A versus 20 A) provides additional design margin
  • Increased power dissipation capability (200 W versus 150 W) allows operation in higher-power applications
  • Improved DC current gain (20 versus 15 minimum) enhances switching efficiency
  • Lower collector cutoff current (2 mA versus 10 mA) reduces leakage in off-state conditions
  • Higher transition frequency (4 MHz versus 200 kHz) supports faster switching applications

Package Compatibility: Both devices utilize the TO-3 package form factor (TO-204AA designation). The 2N5885G is specified as through-hole mounting, while the 2N3772 is chassis mount. Both packages are mechanically compatible with standard TO-3 socket and mounting configurations.

Compliance Status: Both parts maintain ROHS3 compliance and are unaffected by REACH regulations, ensuring compatibility with current procurement and manufacturing standards.

Frequently Asked Questions (FAQ)

Q: Can the 2N5885G directly replace the 2N3772 in existing designs?

A: Yes. The 2N5885G meets or exceeds all electrical specifications of the 2N3772 and shares the same TO-3 package form factor. Both devices are NPN transistors with identical 60 V breakdown voltage ratings and compatible saturation characteristics.

Q: What are the key differences between these two parts?

A: The 2N5885G provides higher current capacity (25 A versus 20 A), greater power dissipation (200 W versus 150 W), improved current gain (20 versus 15 minimum), and significantly higher transition frequency (4 MHz versus 200 kHz). The 2N5885G also exhibits lower collector cutoff current.

Q: Are there mounting considerations when substituting the 2N3772 with the 2N5885G?

A: Both devices use the TO-3 package. The 2N3772 is specified as chassis mount while the 2N5885G is through-hole. Standard TO-3 mounting hardware and thermal management solutions are compatible with both devices.

Q: Do both parts meet current environmental compliance standards?

A: Yes. Both the 2N3772 and 2N5885G are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component procurement.

Q: What applications benefit from the 2N5885G's higher transition frequency?

A: The 2N5885G's 4 MHz transition frequency supports faster switching applications compared to the 2N3772's 200 kHz rating. Applications requiring higher switching speeds or operating frequencies can utilize the enhanced performance of the 2N5885G.

Q: Is the 2N5885G suitable for all 2N3772 applications?

A: The 2N5885G is suitable for applications where the 2N3772 was specified, with the added capability to handle higher current, power, and switching frequency requirements. The superior electrical ratings of the 2N5885G provide design flexibility and performance margin.

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