2N3702 Equivalent & Substitute Parts

Part Overview

The 2N3702 is a PNP bipolar junction transistor manufactured by onsemi, rated for 25 V collector-emitter breakdown voltage and 500 mA maximum collector current. This device is packaged in a TO-92-3 through-hole configuration and is classified as obsolete. The 2N3702 operates across a temperature range of -55°C to 150°C and delivers 625 mW maximum power dissipation with a transition frequency of 100 MHz.

Due to its obsolete product status, locating the 2N3702 from original manufacturing sources presents supply chain challenges. Substitute parts with equivalent or superior electrical characteristics and compatible through-hole packaging provide viable alternatives for new designs and legacy system maintenance.

Substiute Parts

2N3702
onsemiIn Stock: 13762N3702 Datasheet
2N3702
Current Part
ZTX749
Diodes IncorporatedIn Stock: 5178ZTX749 Datasheet
ZTX749
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 25 V
Current - Collector (Ic) (Max) 500 mA
Power - Max 625 mW
Frequency - Transition 100 MHz
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution of the 2N3702 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor type must be PNP
  • Collector-emitter breakdown voltage must be equal to or greater than 25 V
  • Maximum collector current must be equal to or greater than 500 mA
  • Maximum power dissipation must be equal to or greater than 625 mW
  • Mounting type must be through-hole
  • Package must be physically compatible with TO-92-3 footprint or TO-92 compatible variant

Secondary Compatibility Factors:

  • Operating temperature range should encompass or exceed -55°C to 150°C
  • Transition frequency should meet or exceed 100 MHz

The ZTX749 manufactured by Diodes Incorporated satisfies all primary substitution criteria and exceeds several electrical specifications, making it a direct substitute for the 2N3702.

Parameter Comparison

Parameter 2N3702 (onsemi) ZTX749 (Diodes Incorporated) Unit
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 25 25 V
Current - Collector (Ic) (Max) 500 2000 mA
Power - Max 625 1000 mW
Frequency - Transition 100 160 MHz
Current - Collector Cutoff (Max) 100 100 nA
Operating Temperature Range -55 to 150 -55 to 200 °C
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 E-Line (TO-92 compatible)

Engineering Selection Recommendations

ZTX749 as Primary Substitute:

The ZTX749 is classified as an active product with RoHS3 compliance and REACH unaffected status. This substitute exceeds the 2N3702 electrical specifications across multiple parameters: maximum collector current is rated at 2 A (versus 500 mA), maximum power dissipation is 1 W (versus 625 mW), and transition frequency is 160 MHz (versus 100 MHz). The operating temperature range extends to 200°C, providing additional thermal margin beyond the 2N3702's 150°C maximum.

The E-Line package is physically compatible with TO-92 footprints, ensuring direct mechanical substitution in through-hole applications. Both devices share identical collector-emitter breakdown voltage (25 V) and collector cutoff current (100 nA), maintaining electrical equivalence in these critical parameters.

The ZTX749's active product status and modern compliance certifications provide supply chain stability and regulatory alignment for current and future applications.

Frequently Asked Questions (FAQ)

Q: Can the ZTX749 directly replace the 2N3702 in existing PCB designs?

A: Yes. The ZTX749 E-Line package is physically compatible with TO-92-3 through-hole footprints. Both devices are three-terminal PNP transistors with identical pin configurations. No PCB modifications are required for mechanical substitution.

Q: Are there electrical performance differences between the 2N3702 and ZTX749?

A: The ZTX749 exceeds the 2N3702 in maximum collector current (2 A versus 500 mA), maximum power dissipation (1 W versus 625 mW), and transition frequency (160 MHz versus 100 MHz). Both devices maintain the same 25 V collector-emitter breakdown voltage. These differences indicate the ZTX749 is a higher-performance substitute suitable for applications requiring greater current handling or frequency response.

Q: What is the operating temperature difference between these devices?

A: The 2N3702 operates from -55°C to 150°C, while the ZTX749 operates from -55°C to 200°C. The ZTX749 provides an additional 50°C of maximum temperature capability, offering greater thermal margin in high-temperature applications.

Q: Why is the 2N3702 classified as obsolete?

A: The 2N3702 is an older discrete transistor design. Obsolescence reflects discontinuation by the original manufacturer (onsemi) and reduced availability in the supply chain. Modern alternatives such as the ZTX749 provide equivalent or superior functionality with active production status and current compliance certifications.

Q: Are there compliance or certification differences?

A: The ZTX749 carries RoHS3 compliance certification, indicating conformance to current environmental and hazardous substance restrictions. Both devices are REACH unaffected and classified under ECCN EAR99. The ZTX749's active product status ensures ongoing compliance with evolving regulatory requirements.

Q: What packaging considerations apply to substitution?

A: The 2N3702 uses TO-92-3 packaging, while the ZTX749 uses E-Line packaging. Both are through-hole mount configurations with TO-92 compatible pin spacing and lead geometry. Physical substitution requires no special considerations beyond standard component placement procedures.

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