2N3584 PBFREE Equivalent & Substitute Parts

Part Overview

The 2N3584 PBFREE is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp, designed for power switching and amplification applications. This device features a maximum collector current of 2 A, collector-emitter breakdown voltage of 250 V, and maximum power dissipation of 35 W in a Through Hole TO-66 package. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating modern availability and compliance requirements.

Substiute Parts

2N3584 PBFREE

Central Semiconductor CorpIn Stock: 11752N3584 PBFREE Datasheet

Current PartRFQ

2N3584

Microchip TechnologyIn Stock: 11482N3584 Datasheet

MFR RecommendedRFQ

2N4240

Microchip TechnologyIn Stock: 6932N4240 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution logic for the 2N3584 PBFREE is based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN (required match)
• Current - Collector (Ic) Max: 2 A (required match)
• Voltage - Collector Emitter Breakdown: ≥ 250 V (equal or higher acceptable)
• Package / Case: TO-213AA or TO-66-2 (mechanical compatibility required)
• Mounting Type: Through Hole (required match)
• Operating Temperature Range: -65°C to 200°C (required match)

Substitute Parts Identified:

Group 1: Direct Electrical Equivalent

• 2N3584 (Microchip Technology): Maintains identical Ic (2 A) and Vce breakdown (250 V) specifications. Vce saturation and DC current gain parameters differ slightly but remain within acceptable operating ranges. Power rating reduced to 2.5 W. Transition frequency not specified. Product status is Active, providing superior procurement availability compared to the obsolete Central Semiconductor version.

Group 2: Higher Voltage Rating Substitute

• 2N4240 (Microchip Technology): Provides elevated collector-emitter breakdown voltage of 500 V while maintaining 2 A collector current and Through Hole TO-66 package. Power rating of 35 W matches the original specification. Vce saturation and DC current gain parameters differ. Transition frequency not specified. Product status is Active. This substitute is suitable for applications requiring higher voltage margin.

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement (Electrical Equivalence): Select the 2N3584 from Microchip Technology when the original 250 V collector-emitter breakdown voltage is sufficient and the application does not require the full 35 W power dissipation of the original part. This substitute maintains identical voltage and current ratings with Active product status, ensuring long-term availability. Note that the reduced power rating (2.5 W versus 35 W) requires thermal design verification for high-power applications.

For Higher Voltage Margin Applications: Select the 2N4240 from Microchip Technology when the circuit design benefits from the elevated 500 V collector-emitter breakdown voltage. This substitute maintains the 2 A collector current, 35 W power dissipation, and Through Hole TO-66 package. The 2N4240 is suitable for applications operating at higher supply voltages or requiring additional voltage safety margin. Active product status provides reliable procurement.

Compliance Considerations: The original 2N3584 PBFREE is ROHS3 Compliant. Both Microchip substitutes are RoHS non-compliant. Design teams must evaluate compliance requirements for their specific applications and markets before selecting a substitute part.

Frequently Asked Questions (FAQ)

Q: Can the 2N3584 from Microchip Technology directly replace the 2N3584 PBFREE from Central Semiconductor?

A: The Microchip 2N3584 maintains identical collector current (2 A) and collector-emitter breakdown voltage (250 V) specifications, identical saturation voltage, and identical cutoff current. Both devices use the TO-66 package. However, the power rating differs (2.5 W versus 35 W). For applications operating below 2.5 W, direct substitution is valid. For higher power applications, thermal analysis is required to confirm the reduced power rating is acceptable.

Q: What is the primary difference between the 2N3584 and 2N4240 substitutes?

A: The 2N4240 provides a doubled collector-emitter breakdown voltage rating (500 V versus 250 V) while maintaining the same 2 A collector current. The 2N4240 also restores the 35 W power dissipation rating. Both devices share the same TO-66 package and operating temperature range. Select the 2N4240 when higher voltage operation or voltage margin is required.

Q: Are the substitute parts pin-compatible with the original 2N3584 PBFREE?

A: Yes. Both substitute parts use the TO-66 (TO-213AA) package with identical pinout: Base, Collector, and Emitter. Physical mounting and electrical connection are directly compatible without modification.

Q: Does the reduced power rating of the Microchip 2N3584 affect circuit performance?

A: Power rating reduction from 35 W to 2.5 W affects thermal design only. If the circuit dissipates less than 2.5 W in the transistor, performance is unaffected. If the circuit requires higher power dissipation, the 2N4240 (35 W rating) is the appropriate substitute. Verify actual power dissipation in your application before selecting the Microchip 2N3584.

Q: What is the impact of RoHS compliance differences?

A: The original 2N3584 PBFREE is ROHS3 Compliant. Both Microchip substitutes are RoHS non-compliant. Applications subject to RoHS regulations (primarily European markets) must confirm that non-compliant substitutes are acceptable under applicable exemptions or design requirements before implementation.

Q: Can I use the 2N4240 in any circuit designed for the 2N3584 PBFREE?

A: The 2N4240 is electrically compatible for any circuit designed for the 2N3584 PBFREE. The higher 500 V breakdown voltage provides additional safety margin and does not degrade performance. However, verify that the circuit design does not depend on the specific 250 V breakdown voltage as a protective limit. In most applications, the higher voltage rating is beneficial.