2N3584 Equivalent & Substitute Parts Reference Page

Part Overview

The 2N3584 is an NPN power silicon bipolar junction transistor (BJT) from Microchip Technology. It features a maximum collector-emitter voltage of 250 V, collector current of 2 A, and power dissipation of 2.5 W. It is packaged in TO-66 (TO-213AA) and intended for through-hole mounting. The device is currently active with inventory available. In sourcing and engineering contexts, there is a need to identify alternative models due to factors such as compliance requirements, product lifecycle status, supply chain constraints, and inventory differences.

Key Parameters

Manufacturer Part Number	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Operating Temperature	Mounting Type	Package / Case	RoHS Status	REACH Status	Product Status
2N3584	NPN	2 A	250 V	750mV @ 125mA, 1A	5mA	40 @ 100mA, 10V	2.5 W	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	RoHS non-compliant	REACH Unaffected	Active
2N3584 PBFREE	NPN	2 A	250 V	750mV @ 125mA, 1A	5mA	25 @ 1A, 10V	35 W	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	ROHS3 Compliant	REACH Unaffected	Obsolete

Substitute Part Grouping Explanation

Substitution is based strictly on matching key electrical and mechanical parameters including transistor type (NPN), collector current (2 A), collector-emitter breakdown voltage (250 V), collector cutoff current (5 mA), Vce saturation (750 mV @ Ib, Ic), minimum DC current gain, power dissipation, operating temperature, and package/case format (TO-66, TO-213AA). Compliance status (RoHS, REACH) and product lifecycle status (active/obsolete) are used for supply chain and regulatory selection.

Parameter Comparison

Parameter	2N3584	2N3584 PBFREE
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	250 V	250 V
Vce Saturation (Max) @ Ib, Ic	750mV @ 125mA, 1A	750mV @ 125mA, 1A
Current - Collector Cutoff (Max)	5mA	5mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 100mA, 10V	25 @ 1A, 10V
Power - Max	2.5 W	35 W
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-213AA, TO-66-2	TO-213AA, TO-66-2
RoHS Status	RoHS non-compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected
Product Status	Active	Obsolete

Engineering Selection Recommendations

Product selection can be governed by RoHS compliance if mandated by application regulations. The 2N3584 is RoHS non-compliant and active, while the 2N3584 PBFREE is ROHS3 compliant but obsolete. REACH status is unaffected for both models. Component lifecycle status should be considered in inventory planning and long-term supply assurance.

Frequently Asked Questions (FAQ)

Q1: What key parameters determine compatibility for substitute transistors in this category?
A1: Compatibility is determined strictly by transistor type, maximum collector current, collector-emitter breakdown voltage, collector cutoff current, saturation voltage, minimum DC current gain, power dissipation rating, operating temperature range, mounting type, and package/case format.

Q2: Does package similarity impact substitution?
A2: Both 2N3584 and 2N3584 PBFREE utilize the TO-213AA, TO-66-2 package for through-hole mounting, ensuring mechanical compatibility.

Q3: How does RoHS compliance influence selection?
A3: If RoHS compliance is required, the 2N3584 PBFREE provides this attribute, but its obsolete status must be considered regarding availability.

Q4: Are there differences in electrical performance that must be considered?
A4: DC current gain and power ratings differ: the 2N3584 has higher gain at lower current, while the 2N3584 PBFREE has lower gain at higher current and greater power dissipation specification.

Q5: Is lifecycle status relevant for equivalency decisions?
A5: Yes. The 2N3584 is active, while 2N3584 PBFREE is obsolete; lifecycle status directly affects ongoing supply reliability.

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