2N3055H Equivalent & Substitute Parts

Part Overview

The 2N3055H is an NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for high-current switching and amplification applications. This device features a maximum collector current of 15 A, collector-emitter breakdown voltage of 60 V, and maximum power dissipation of 115 W in a Through Hole TO-204 (TO-3) package. The 2N3055H is classified as obsolete, which necessitates identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain identical electrical characteristics and mechanical compatibility to ensure direct replacement capability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	15	A
Voltage - Collector Emitter Breakdown (Max)	60	V
Vce Saturation (Max) @ Ib, Ic	3V @ 3.3A, 10A	—
Current - Collector Cutoff (Max)	700	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V	—
Power - Max	115	W
Frequency - Transition	2.5	MHz
Operating Temperature Range	-65 to 200	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-204AA, TO-3	—

Substitute Part Grouping Explanation

Substitution of the 2N3055H is determined by strict equivalence across all electrical and mechanical parameters. The primary substitution criterion is the matching of collector current rating (15 A maximum), collector-emitter breakdown voltage (60 V maximum), power dissipation capability (115 W), and saturation voltage characteristics. The transistor type (NPN), DC current gain specification (20 @ 4A, 4V minimum), transition frequency (2.5 MHz), and operating temperature range (-65°C to 200°C) must remain constant. The Through Hole mounting configuration and TO-204 (TO-3) package form factor are mandatory for mechanical compatibility. Parts meeting these criteria are classified as parametric equivalents and may be substituted in applications where the 2N3055H was originally specified.

Parameter Comparison

Parameter	2N3055H	2N3055G	Unit
Manufacturer	onsemi	onsemi	—
Product Status	Obsolete	Active	—
Transistor Type	NPN	NPN	—
Current - Collector (Ic) (Max)	15	15	A
Voltage - Collector Emitter Breakdown (Max)	60	60	V
Vce Saturation (Max) @ Ib, Ic	3V @ 3.3A, 10A	3V @ 3.3A, 10A	—
Current - Collector Cutoff (Max)	700	700	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V	20 @ 4A, 4V	—
Power - Max	115	115	W
Frequency - Transition	2.5	2.5	MHz
Operating Temperature Range	-65 to 200	-65 to 200	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-204AA, TO-3	TO-204AA, TO-3	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

The 2N3055H is classified as obsolete and should be replaced with the 2N3055G for new designs and production applications. The 2N3055G is an active product manufactured by onsemi with identical electrical specifications and mechanical compatibility. Both devices share the same base product number (2N3055) and are functionally interchangeable across all rated parameters.

A significant distinction exists in regulatory compliance status. The 2N3055G achieves ROHS3 compliance, whereas the 2N3055H is RoHS non-compliant. For applications subject to RoHS directives or customer requirements mandating RoHS compliance, the 2N3055G is the appropriate selection. Both parts maintain REACH Unaffected status and share the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Inventory availability favors the 2N3055G, which has 1451 pieces in stock compared to 1075 pieces for the 2N3055H. The 2N3055G is supplied in Tray packaging, while the 2N3055H packaging specification is not defined in the provided data.

Frequently Asked Questions (FAQ)

Q: Can the 2N3055G directly replace the 2N3055H in existing circuit designs?

A: Yes. The 2N3055G is a parametric equivalent with identical electrical ratings (15 A maximum collector current, 60 V breakdown voltage, 115 W power dissipation) and mechanical compatibility (Through Hole TO-204/TO-3 package). Direct substitution is supported without circuit modification.

Q: What is the primary reason to transition from 2N3055H to 2N3055G?

A: The 2N3055H is classified as obsolete. The 2N3055G is the active equivalent from the same manufacturer (onsemi) and should be specified for new designs and ongoing production to ensure long-term component availability.

Q: Are there compliance differences between these parts?

A: Yes. The 2N3055G is ROHS3 compliant, while the 2N3055H is RoHS non-compliant. For applications requiring RoHS compliance, the 2N3055G must be selected. Both parts are REACH Unaffected.

Q: Do the electrical characteristics differ between 2N3055H and 2N3055G?

A: No. Both parts share identical electrical specifications: 15 A maximum collector current, 60 V collector-emitter breakdown voltage, 3 V saturation voltage at specified conditions, 700 µA maximum collector cutoff current, 20 minimum DC current gain at 4 A and 4 V, 115 W maximum power dissipation, 2.5 MHz transition frequency, and -65°C to 200°C operating temperature range.

Q: Are the packages identical?

A: Yes. Both the 2N3055H and 2N3055G use the TO-204AA (TO-3) Through Hole package, ensuring mechanical and thermal compatibility in existing PCB layouts and heat sink assemblies.

Q: What is the inventory status for these parts?

A: The 2N3055G has higher inventory availability (1451 pieces) compared to the 2N3055H (1075 pieces), both listed as new original stock.

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