2N2920 Equivalent & Substitute Parts

Part Overview

The 2N2920 is a dual NPN bipolar junction transistor (BJT) housed in a TO-78-6 metal can package. Manufactured by Central Semiconductor Corp, this component is classified as obsolete, which necessitates identification of active equivalent and substitute parts for ongoing design support and procurement. The 2N2920 operates at maximum collector current of 30mA, collector-emitter breakdown voltage of 60V, and maximum power dissipation of 1.5W, making it suitable for low-power switching and amplification applications in legacy electronic systems.

Substiute Parts

2N2920
Central Semiconductor CorpIn Stock: 11402N2920 Datasheet
2N2920
Current Part
2N2920
Microchip TechnologyIn Stock: 10112N2920 Datasheet
2N2920
MFR Recommended
MAT01AHZ
Analog Devices Inc.In Stock: 1475MAT01AHZ Datasheet
MAT01AHZ
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 30 mA
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 100µA, 1mA mV
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V
Power - Max 1.5 W
Frequency - Transition 60 MHz
Operating Temperature -65 to 200 °C (TJ)
Mounting Type Through Hole
Package / Case TO-78-6 Metal Can

Substitute Part Grouping Explanation

Substitution of the 2N2920 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor configuration: 2 NPN (Dual) topology
  • Package type: TO-78-6 Metal Can (mechanical compatibility)
  • Collector current rating: minimum 30mA
  • Collector-emitter breakdown voltage: minimum 60V
  • DC current gain (hFE): minimum 300 @ 1mA, 5V

Secondary Compatibility Factors:

  • Power dissipation capability
  • Vce saturation characteristics
  • Operating temperature range
  • Transition frequency performance
  • RoHS and REACH compliance status

Substitute parts must maintain electrical performance within the specified operating envelope of the original 2N2920 to ensure functional equivalence in circuit applications.

Parameter Comparison

Parameter 2N2920 (Central Semiconductor) 2N2920 (Microchip Technology) MAT01AHZ (Analog Devices)
Manufacturer Central Semiconductor Corp Microchip Technology Analog Devices Inc.
Product Status Obsolete Active Active
Transistor Type 2 NPN (Dual) 2 NPN (Dual) 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max) 30 mA 30 mA 25 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 45 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 100µA, 1mA 300mV @ 100µA, 1mA 800mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V 300 @ 1mA, 5V Not specified
Power - Max 1.5 W 350 mW 500 mW
Frequency - Transition 60 MHz Not specified 450 MHz
Operating Temperature -65 to 200 °C (TJ) 200 °C (TJ) -55 to 150 °C (TJ)
Package / Case TO-78-6 Metal Can TO-78-6 Metal Can TO-78-6 Metal Can
RoHS Status RoHS non-compliant RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

2N2920 (Microchip Technology): This part is the direct manufacturer equivalent with identical electrical specifications to the original Central Semiconductor 2N2920. It maintains 30mA collector current, 60V breakdown voltage, and 300 minimum hFE rating. The Microchip variant is in active production status, ensuring long-term availability. However, it retains RoHS non-compliant status and exhibits reduced power dissipation (350mW versus 1.5W), which may limit application in higher-power circuits. This substitute is optimal for direct replacement in legacy designs where RoHS compliance is not mandated.

MAT01AHZ (Analog Devices): This part offers active product status and ROHS3 compliance, addressing regulatory requirements for new designs. The MAT01AHZ is specified as a matched pair with superior transition frequency (450MHz versus 60MHz). However, it presents electrical deviations: reduced maximum collector current (25mA versus 30mA), reduced breakdown voltage (45V versus 60V), and elevated Vce saturation (800mV versus 350mV). These parameters restrict the MAT01AHZ to applications operating within 25mA current and 45V voltage envelopes. The matched-pair configuration provides enhanced performance for precision analog applications but introduces design constraints for direct substitution in circuits designed for the full 2N2920 specification envelope.

Frequently Asked Questions (FAQ)

Q: Can the Microchip 2N2920 directly replace the Central Semiconductor 2N2920 in all applications?

A: The Microchip 2N2920 maintains electrical equivalence across all specified parameters: 30mA collector current, 60V breakdown voltage, 300 minimum hFE, and identical TO-78-6 packaging. Direct substitution is valid for applications operating within these specifications. Verify that circuit design does not exceed the reduced power dissipation rating (350mW) of the Microchip variant compared to the original 1.5W specification.

Q: Is the MAT01AHZ suitable as a substitute for the 2N2920?

A: The MAT01AHZ is a partial substitute with significant electrical deviations. It is suitable only for applications where circuit design operates within the following reduced envelope: maximum 25mA collector current, maximum 45V collector-emitter voltage, and tolerance for 800mV Vce saturation. Circuits designed for the full 30mA/60V specification of the 2N2920 cannot use the MAT01AHZ without design modification. The matched-pair configuration of the MAT01AHZ is beneficial for precision analog applications requiring transistor matching.

Q: What are the packaging compatibility considerations?

A: All three parts (Central Semiconductor 2N2920, Microchip 2N2920, and MAT01AHZ) use identical TO-78-6 metal can packaging with through-hole mounting. Pin configuration and mechanical footprint are compatible, enabling direct socket substitution without PCB modification.

Q: How do RoHS compliance requirements affect part selection?

A: The Central Semiconductor and Microchip 2N2920 variants are RoHS non-compliant. The MAT01AHZ is ROHS3 compliant. For new designs subject to RoHS regulations, the MAT01AHZ is the compliant option, provided circuit specifications accommodate its reduced electrical ratings (25mA/45V envelope). For legacy system maintenance where RoHS compliance is not required, either 2N2920 variant is acceptable.

Q: What is the significance of the matched-pair designation on the MAT01AHZ?

A: The MAT01AHZ is specified as a matched pair, indicating that the two transistors within the package exhibit closely controlled electrical characteristics relative to each other. This feature is valuable for precision analog circuits requiring low offset voltage and high gain matching. Standard dual transistors (2N2920 variants) do not guarantee matched characteristics between the two transistors.

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