Equivalent & Substitute Parts for 2N2907A PNP Bipolar Junction Transistor

Part Overview

The 2N2907A is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This component operates at a maximum collector voltage of 60 V with a collector current rating of 600 mA and maximum power dissipation of 400 mW. The device is housed in a TO-18 metal can package suitable for through-hole mounting.

The 2N2907A is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and production requirements. Substitute parts listed below maintain electrical and mechanical compatibility while offering active product status and improved availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Maximum Collector Current (Ic)	600	mA
Maximum Collector-Emitter Breakdown Voltage	60	V
Vce Saturation (Max)	1.6 V @ 50 mA, 500 mA	V
Maximum Power Dissipation	400	mW
DC Current Gain (hFE Min)	100 @ 150 mA, 10 V	—
Transition Frequency	200	MHz
Operating Temperature Range	-55 to 150	°C
Package Type	TO-18 (TO-206AA)	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitute parts for the 2N2907A are classified into two categories based on electrical and mechanical compatibility:

Direct Manufacturer Substitutes maintain identical or superior electrical specifications across all critical parameters: collector current (600 mA), collector-emitter breakdown voltage (60 V), saturation voltage (1.6 V @ 50 mA, 500 mA), DC current gain (100 @ 150 mA, 10 V), and package configuration (TO-18 through-hole). These parts are functionally interchangeable in circuit applications.

Parametric Equivalent Substitutes match the core electrical specifications of the 2N2907A while offering enhanced compliance status or extended temperature operating ranges. These parts satisfy the same functional requirements and package constraints.

The following parameters determine substitution eligibility:

Transistor polarity (PNP)
Maximum collector current ≥ 600 mA
Maximum collector-emitter breakdown voltage ≥ 60 V
Saturation voltage ≤ 1.6 V @ specified bias conditions
DC current gain (hFE) ≥ 100 @ 150 mA, 10 V
Package type: TO-18 through-hole configuration
Mounting type: Through-hole

Parameter Comparison

Parameter	2N2907A (Main)	2N2907AL	JAN2N2907A	2N2907A PBFREE
Manufacturer	Micro Commercial Co	Microchip Technology	Microchip Technology	Central Semiconductor Corp
Product Status	Obsolete	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP
Ic (Max)	600 mA	600 mA	600 mA	600 mA
Vce Breakdown (Max)	60 V	60 V	60 V	60 V
Vce Saturation (Max)	1.6 V @ 50 mA, 500 mA	1.6 V @ 50 mA, 500 mA	1.6 V @ 50 mA, 500 mA	1.6 V @ 50 mA, 500 mA
Icbo (Max)	10 nA	50 nA	50 nA	10 nA
hFE (Min) @ 150 mA, 10 V	100	100	100	100
Power (Max)	400 mW	500 mW	500 mW	400 mW
Frequency - Transition	200 MHz	—	—	200 MHz
Operating Temperature	-55 to 150 °C	-65 to 200 °C	-65 to 200 °C	-65 to 200 °C
Package / Case	TO-206AA, TO-18-3	TO-206AA, TO-18-3	TO-206AA, TO-18-3	TO-206AA, TO-18-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
RoHS Status	Non-compliant	Non-compliant	Non-compliant	ROHS3 Compliant
Grade	Commercial	Commercial	Military	Commercial

Engineering Selection Recommendations

2N2907AL (Microchip Technology) is a direct manufacturer substitute offering active product status with identical electrical specifications to the 2N2907A. This part provides extended operating temperature range (-65 to 200 °C) and increased maximum power dissipation (500 mW), making it suitable for applications requiring enhanced thermal performance. The 2N2907AL maintains RoHS non-compliant status consistent with the original component.

JAN2N2907A (Microchip Technology) is a military-grade equivalent qualified to MIL-PRF-19500/291 specification. This part is appropriate for applications requiring military-level component certification and traceability. The JAN2N2907A provides identical electrical performance to the 2N2907A with extended operating temperature range and active product status. Military qualification adds cost and lead time considerations.

2N2907A PBFREE (Central Semiconductor Corp) is a parametric equivalent offering ROHS3 compliance, addressing regulatory requirements for lead-free manufacturing and environmental compliance. This part maintains the original 2N2907A electrical specifications including 200 MHz transition frequency and 400 mW power rating, while extending the operating temperature range to -65 to 200 °C. The PBFREE variant is recommended for applications subject to RoHS directives or environmental regulations.

Selection between substitute parts depends on specific application requirements: standard commercial applications favor the 2N2907AL for availability and performance; military or aerospace applications require the JAN2N2907A; regulatory compliance applications require the 2N2907A PBFREE.

Frequently Asked Questions (FAQ)

Q: Can the 2N2907AL be used as a direct replacement for the 2N2907A in existing designs?

A: Yes. The 2N2907AL maintains identical electrical specifications for collector current (600 mA), collector-emitter breakdown voltage (60 V), saturation voltage (1.6 V), and DC current gain (100 @ 150 mA, 10 V). The TO-18 through-hole package is mechanically identical. The extended operating temperature range (-65 to 200 °C) and increased power rating (500 mW) provide enhanced performance margins.

Q: What is the difference between the 2N2907AL and JAN2N2907A?

A: Both parts are manufactured by Microchip Technology and provide identical electrical specifications. The JAN2N2907A is military-grade, qualified to MIL-PRF-19500/291 specification, and includes military traceability and documentation requirements. The 2N2907AL is a commercial-grade part. Selection depends on application classification and regulatory requirements.

Q: Is the 2N2907A PBFREE suitable for RoHS-compliant applications?

A: Yes. The 2N2907A PBFREE is ROHS3 compliant, meeting lead-free and environmental compliance requirements. This part maintains the original 2N2907A electrical specifications including 200 MHz transition frequency and 400 mW power dissipation, while providing extended operating temperature range (-65 to 200 °C).

Q: Are all substitute parts available in the same TO-18 package?

A: Yes. All substitute parts (2N2907AL, JAN2N2907A, and 2N2907A PBFREE) are packaged in the TO-18 (TO-206AA) through-hole configuration, providing mechanical and pin compatibility with the original 2N2907A.

Q: What is the significance of the Icbo (collector cutoff current) difference between the 2N2907A and 2N2907AL?

A: The 2N2907A specifies Icbo at 10 nA maximum, while the 2N2907AL specifies 50 nA maximum. Both values are within acceptable leakage current ranges for PNP transistors. The 2N2907A PBFREE maintains the 10 nA specification. For applications with strict leakage current requirements, the 2N2907A PBFREE or original 2N2907A specification should be selected.

Q: Can the 2N2907A PBFREE be used in non-RoHS applications?

A: Yes. The 2N2907A PBFREE is electrically and mechanically compatible with the 2N2907A and can be used in any application where the original part was specified. ROHS3 compliance is an additional feature that does not restrict use in non-RoHS applications.

Q: What is the impact of the extended operating temperature range on part selection?

A: All substitute parts extend the operating temperature range to -65 to 200 °C compared to the original 2N2907A range of -55 to 150 °C. This extended range provides improved performance margins for applications operating at temperature extremes. For applications operating within the original temperature range, this difference has no functional impact.

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