2N2907 Equivalent & Substitute Parts

Part Overview

The 2N2907 is a small-signal PNP bipolar junction transistor (BJT) manufactured by onsemi, housed in a TO-18 metal can package. This device is rated for 40 V collector-emitter breakdown voltage and 600 mA maximum collector current, with a maximum power dissipation of 400 mW. The part is classified as obsolete, making identification of suitable substitutes necessary for ongoing design support and procurement continuity. Equivalent parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and gain characteristics while accommodating the through-hole TO-18 package form factor.

Substiute Parts

2N2907

onsemiIn Stock: 166872N2907 Datasheet

Current PartRFQ

2N2907

Microchip TechnologyIn Stock: 166782N2907 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N2907 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• Transistor polarity: PNP configuration required
• Collector current capacity: minimum 600 mA
• Collector-emitter breakdown voltage: minimum 40 V
• DC current gain (hFE): minimum 100 @ 150mA, 10V
• Vce saturation: maximum 1.6 V @ 50mA, 500mA
• Package type: TO-18 through-hole metal can (TO-206AA)

The 2N2907 manufactured by Microchip Technology meets all substitution criteria. This part maintains identical collector current and gain specifications while providing enhanced voltage rating (60 V versus 40 V) and increased power dissipation capability (500 mW versus 400 mW). The Microchip variant is classified as active product status, ensuring continued availability and manufacturing support. Both devices share identical saturation voltage characteristics and are housed in the same TO-18 package configuration, enabling direct mechanical and electrical interchange.

Parameter Comparison

Engineering Selection Recommendations

The 2N2907 manufactured by Microchip Technology is the direct equivalent substitute for the obsolete onsemi 2N2907. Selection of the Microchip variant is supported by the following engineering factors:

Product Status: The Microchip 2N2907 maintains active product status, ensuring long-term availability, manufacturing continuity, and technical support. The onsemi variant is classified as obsolete, presenting procurement risk and potential supply discontinuation.

Electrical Compatibility: The Microchip device meets or exceeds all critical electrical parameters of the original part. Collector current capacity, DC current gain, and saturation voltage are identical. The enhanced voltage rating (60 V versus 40 V) and increased power dissipation (500 mW versus 400 mW) provide additional design margin without introducing incompatibility.

Mechanical Compatibility: Both devices utilize identical TO-18 through-hole packaging (TO-206AA), enabling direct board-level substitution without circuit layout modification or mechanical redesign.

Compliance: Both variants carry identical REACH and ECCN classifications (EAR99), maintaining regulatory compliance across supply chain transitions.

Frequently Asked Questions (FAQ)

Q: Can the Microchip 2N2907 be used as a direct replacement for the onsemi 2N2907 in existing designs?

A: Yes. The Microchip 2N2907 is electrically and mechanically compatible with the onsemi variant. Identical collector current, DC current gain, and saturation voltage specifications ensure functional equivalence. The TO-18 package configuration is identical, permitting direct board-level substitution.

Q: What are the key differences between the onsemi and Microchip 2N2907 variants?

A: The primary differences are product status and enhanced ratings. The Microchip variant is active product, while the onsemi part is obsolete. The Microchip device provides higher collector-emitter breakdown voltage (60 V versus 40 V) and increased power dissipation capability (500 mW versus 400 mW). These enhancements provide additional design margin and do not compromise compatibility with circuits designed for the original 40 V, 400 mW specification.

Q: Are there any package or pinout differences between these devices?

A: No. Both the onsemi and Microchip 2N2907 devices are housed in the TO-18 metal can package (TO-206AA designation). Pinout, lead configuration, and mechanical dimensions are identical, enabling direct substitution without board modification.

Q: What parameters must be verified when substituting the 2N2907?

A: Substitution is valid when the replacement device maintains minimum specifications for collector current (600 mA), collector-emitter breakdown voltage (40 V minimum), DC current gain (100 @ 150mA, 10V minimum), and saturation voltage (1.6 V maximum @ 50mA, 500mA). The Microchip 2N2907 meets all these requirements.

Q: Is the Microchip 2N2907 suitable for new design applications?

A: Yes. The Microchip 2N2907 is classified as active product status, making it appropriate for new designs requiring small-signal PNP BJT functionality in the TO-18 package. The active status ensures manufacturing support and long-term availability.

Q: What is the significance of the higher voltage rating on the Microchip variant?

A: The 60 V collector-emitter breakdown rating on the Microchip device exceeds the 40 V specification of the original onsemi part. This higher rating provides additional design margin and protection against voltage transients. Circuits designed for 40 V operation remain fully compatible and benefit from the enhanced overvoltage capability.