2N2907 Equivalent & Substitute Parts

Part Overview

The 2N2907 is a PNP bipolar junction transistor (BJT) manufactured by STMicroelectronics, designed for general-purpose switching and amplification applications. The device operates at a maximum collector voltage of 40 V with a collector current rating of 600 mA and maximum power dissipation of 1.8 W in a Through Hole TO-18 package. The 2N2907 is classified as an obsolete product, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Substiute Parts

2N2907

STMicroelectronicsIn Stock: 167162N2907 Datasheet

Current PartRFQ

2N2907AL

Microchip TechnologyIn Stock: 11682N2907AL Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N2907 is determined by electrical and mechanical compatibility within the following critical parameters:

Electrical Compatibility Criteria:

• Transistor type must be PNP
• Collector current rating must equal or exceed 600 mA
• Collector-emitter breakdown voltage must equal or exceed 40 V
• Vce saturation characteristics must match or improve upon 1.6 V @ 50mA, 500mA
• DC current gain (hFE) must meet or exceed 100 @ 150mA, 10V
• Collector cutoff current must not exceed specified limits

Mechanical Compatibility Criteria:

• Package must be TO-18 (TO-206AA, TO-18-3 Metal Can)
• Mounting type must be Through Hole

Compliance Considerations:

• Product status (active vs. obsolete)
• RoHS compliance status
• REACH compliance status

The 2N2907AL meets all electrical and mechanical compatibility requirements and is classified as an active product, making it a direct substitute for the obsolete 2N2907.

Parameter Comparison

Engineering Selection Recommendations

2N2907AL (Microchip Technology) as Substitute:

The 2N2907AL is electrically and mechanically compatible with the 2N2907 for applications where the following conditions are met:

1. Voltage Rating: The 2N2907AL provides a higher collector-emitter breakdown voltage (60 V vs. 40 V), making it suitable for circuits designed for the 2N2907 without risk of voltage-related failure.

2. Current and Gain: Collector current (600 mA) and DC current gain (100 @ 150mA, 10V) are identical, ensuring equivalent switching and amplification performance.

3. Saturation Characteristics: Vce saturation matches the original specification (1.6 V @ 50mA, 500mA), maintaining circuit performance in saturation mode.

4. Power Dissipation: The 2N2907AL has a lower maximum power rating (500 mW vs. 1.8 W). Applications requiring the full 1.8 W dissipation capability of the original 2N2907 must not use this substitute.

5. Product Status: The 2N2907AL is an active product, providing long-term availability and supply chain continuity compared to the obsolete 2N2907.

6. Compliance: The 2N2907AL is RoHS non-compliant, whereas the 2N2907 is ROHS3 compliant. Applications subject to RoHS requirements must not use the 2N2907AL as a substitute.

7. Package and Mounting: Both devices use identical TO-18 Through Hole packaging, ensuring direct mechanical compatibility without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the 2N2907AL directly replace the 2N2907 in all applications?

A: The 2N2907AL is electrically and mechanically compatible with the 2N2907 for most general-purpose switching and amplification circuits. However, two critical limitations apply: (1) applications requiring power dissipation exceeding 500 mW must not use the 2N2907AL, and (2) applications subject to RoHS compliance requirements cannot use the 2N2907AL due to its non-compliant status.

Q: What is the significance of the higher collector-emitter breakdown voltage in the 2N2907AL?

A: The 2N2907AL has a maximum collector-emitter breakdown voltage of 60 V compared to 40 V in the 2N2907. This higher rating provides additional safety margin in circuits operating near the voltage limit and does not negatively affect compatibility with designs specified for 40 V operation.

Q: How does the lower power rating of the 2N2907AL affect substitution?

A: The 2N2907AL is rated for 500 mW maximum power dissipation, whereas the 2N2907 is rated for 1.8 W. Circuits designed to dissipate power near or exceeding 500 mW in the transistor must not use the 2N2907AL, as this would exceed its thermal limits and cause device failure.

Q: Are there package compatibility concerns when substituting the 2N2907AL for the 2N2907?

A: No. Both devices use identical TO-18 Through Hole packaging (TO-206AA, TO-18-3 Metal Can). Pin configuration and mechanical dimensions are compatible, allowing direct substitution without PCB modification.

Q: What is the impact of the higher collector cutoff current in the 2N2907AL?

A: The 2N2907AL has a maximum collector cutoff current (ICBO) of 50 nA compared to 20 nA in the 2N2907. This difference is negligible for most applications and does not affect circuit performance in typical switching or amplification configurations.

Q: Why is RoHS compliance status important for substitution?

A: RoHS compliance is a regulatory requirement in many markets and industries. The 2N2907 is ROHS3 compliant, while the 2N2907AL is not. Products destined for markets with RoHS mandates must use compliant components. Non-compliant substitutes are not acceptable for these applications.

Q: Are the DC current gain characteristics identical between the two devices?

A: Yes. Both the 2N2907 and 2N2907AL have a minimum DC current gain (hFE) of 100 @ 150mA, 10V, ensuring equivalent amplification performance in circuits designed for the original device.

Q: What is the operating temperature range for the 2N2907AL?

A: The 2N2907AL operates from −65°C to 200°C (TJ), providing a wider low-temperature range than the 2N2907, which specifies a maximum operating temperature of 200°C. This extended range does not affect substitution compatibility for applications within the 2N2907's original temperature specification.