2N2484 Equivalent & Substitute Parts

Part Overview

The 2N2484 is a through-hole NPN bipolar junction transistor (BJT) rated for 60 V collector-emitter breakdown voltage and 50 mA maximum collector current. Originally manufactured by onsemi, this device is classified as obsolete. The 2N2484 is designed for general-purpose switching and amplification applications in legacy electronic equipment. Due to its obsolete status, identifying equivalent substitute parts with matching electrical and mechanical specifications is necessary for circuit maintenance, repair, and redesign applications.

Substiute Parts

2N2484

onsemiIn Stock: 23652N2484 Datasheet

Current PartRFQ

2N2484

Microchip TechnologyIn Stock: 23042N2484 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N2484 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Current - Collector (Ic) (Max): 50 mA
• Power - Max: 360 mW
• Mounting Type: Through Hole
• Package / Case: TO-18 metal can

The substitute part 2N2484 manufactured by Microchip Technology meets all critical electrical specifications and maintains the same through-hole TO-18 package configuration. This part is classified as active product status, providing long-term availability compared to the obsolete onsemi version. Both parts share identical voltage and current ratings, enabling direct functional substitution in existing circuit designs.

Parameter Comparison

Engineering Selection Recommendations

The Microchip Technology 2N2484 is the direct substitute for the obsolete onsemi 2N2484. Selection of the Microchip variant is justified on the following basis:

Product Status: The Microchip 2N2484 maintains active product status, ensuring continued availability and supply chain reliability. The onsemi version is obsolete and subject to inventory depletion.

Electrical Equivalence: Both parts share identical maximum ratings for collector-emitter breakdown voltage (60 V), maximum collector current (50 mA), and maximum power dissipation (360 mW). These parameters define the safe operating area and are critical for circuit compatibility.

Compliance Alignment: Both parts maintain identical RoHS non-compliance status, REACH unaffected classification, and moisture sensitivity level (MSL 1). This ensures regulatory and environmental handling requirements remain unchanged during substitution.

Package Compatibility: Both parts utilize through-hole TO-18 metal can packaging, enabling direct mechanical substitution in existing printed circuit board layouts without modification to footprints or mounting hardware.

Performance Characteristics: The Microchip variant exhibits improved DC current gain (225 vs. 150 minimum) and lower saturation voltage (300 mV vs. 350 mV), providing enhanced switching performance while maintaining backward compatibility with circuit designs specified for the original part.

Frequently Asked Questions (FAQ)

Q: Can the Microchip 2N2484 be used as a direct replacement for the onsemi 2N2484 in existing circuits?

A: Yes. Both parts are electrically and mechanically equivalent across all critical parameters: 60 V breakdown voltage, 50 mA maximum collector current, 360 mW power rating, and through-hole TO-18 package. Direct substitution is supported without circuit modification.

Q: What is the primary reason for substituting the onsemi 2N2484?

A: The onsemi 2N2484 is classified as obsolete product. The Microchip 2N2484 provides equivalent functionality with active product status, ensuring long-term availability and supply chain continuity.

Q: Are there differences in saturation voltage between the two parts?

A: Yes. The Microchip variant exhibits a maximum saturation voltage of 300 mV compared to 350 mV for the onsemi version, both measured at 100 µA base current and 1 mA collector current. This represents improved switching performance in the Microchip device.

Q: Do the DC current gain specifications differ between these parts?

A: Yes. The Microchip 2N2484 specifies a minimum DC current gain (hFE) of 225 at 10 mA collector current and 5 V collector-emitter voltage, compared to 150 minimum at 2 mA and 5 V for the onsemi version. The Microchip part demonstrates higher current gain at higher collector current levels.

Q: Are the package designations identical?

A: Both parts use through-hole TO-18 metal can packaging. The onsemi version is designated TO-18-2, while the Microchip version is designated TO-18-3 or TO-206AA. These designations refer to minor variations in lead configuration within the standard TO-18 envelope. Physical compatibility with existing circuit board layouts is maintained.

Q: What is the operating temperature range for the Microchip 2N2484?

A: The Microchip 2N2484 operates from -65°C to 200°C junction temperature. The onsemi version does not specify an operating temperature range in the provided data.

Q: Are there any compliance or regulatory differences between these parts?

A: No. Both parts maintain identical RoHS non-compliance status, REACH unaffected classification, and moisture sensitivity level (MSL 1). Regulatory and environmental handling requirements remain unchanged during substitution.

Q: What is the collector cutoff current specification for the Microchip part?

A: The Microchip 2N2484 specifies a maximum collector cutoff current (Icbo) of 2 nanoamperes. This specification is not provided for the onsemi version.