Equivalent & Substitute Parts for 2N2219 Bipolar (BJT) Transistor

Part Overview

The 2N2219 is a Bipolar (BJT) NPN transistor manufactured by Microchip Technology. Its key specifications include a maximum collector current of 800 mA, collector-emitter breakdown voltage of 30 V, a minimum DC current gain of 100 at specified test conditions, and package type TO-39 (TO-205AD) Metal Can. The product is discontinued at Digi-Key, making it necessary to identify alternative models with compatible electrical and mechanical parameters for continued design, repair, or maintenance needs.

Substiute Parts

2N2219

Microchip TechnologyIn Stock: 15362N2219 Datasheet

Current PartRFQ

2N2270 PBFREE

Central Semiconductor CorpIn Stock: 18392N2270 PBFREE Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute selection for Transistors, Bipolar (BJT) is strictly based on matching or exceeding the following parameters: Transistor Type (NPN), maximum collector current, collector-emitter breakdown voltage, DC current gain under specified test conditions, package type, mounting type, power rating, operational temperature range, and compliance certifications. These are the critical parameters that dictate functional and physical compatibility in circuit designs.

Parameter Comparison

Engineering Selection Recommendations

The 2N2219 is discontinued at major distributors. The substitute 2N2270 PBFREE produced by Central Semiconductor Corp is active, available, and features comparable or higher ratings for maximum collector current, collector-emitter breakdown voltage, maximum power, and a matching package type. 2N2270 PBFREE is ROHS3 compliant, meeting current environmental standards, while the 2N2219 is RoHS non-compliant. Both are unaffected under REACH and present identical MSL ratings. These compliance differences and product status should guide component selection.

Frequently Asked Questions (FAQ)

Q: Are 2N2219 and 2N2270 PBFREE compatible for direct substitution?
A: Both parts are NPN bipolar transistors with the TO-205AD, TO-39-3 Metal Can package and through-hole mounting, supporting interchangeability from a mechanical standpoint. Electrical compatibility is based on matching or exceeding collector current, collector-emitter breakdown voltage, and power rating.

Q: What are the main electrical differences between 2N2219 and 2N2270 PBFREE?
A: 2N2270 PBFREE supports higher maximum collector current (1 A vs. 800 mA), higher voltage (45 V vs. 30 V), and higher power dissipation (1 W vs. 800 mW). The minimum DC current gain is lower (50 vs. 100 under specified conditions) and cutoff current is slightly higher.

Q: Does the difference in RoHS compliance affect substitution?
A: 2N2270 PBFREE is ROHS3 compliant, while 2N2219 is RoHS non-compliant. RoHS compliance is relevant for applications requiring adherence to hazardous substance restrictions.

Q: Are there considerations with the DC current gain for substitution?
A: The minimum DC current gain (hFE) for 2N2270 PBFREE is specified as 50 @ 150mA, 10V, whereas for 2N2219 it is 100 @ 150mA, 10V. This may affect applications sensitive to gain at the specified conditions.

Q: Is the package size and pinout identical between parts?
A: Both transistors are provided in TO-205AD, TO-39-3 Metal Can package suitable for through-hole mounting, supporting physical compatibility.

Q: What key parameters are required for a substitution in this product category?
A: Transistor type, collector current, collector-emitter voltage, DC current gain, package/case, mounting type, power rating, and compliance certifications are crucial for substitution of bipolar (BJT) transistors.