2N1613 Equivalent & Substitute Parts

Part Overview

The 2N1613 is an NPN bipolar junction transistor (BJT) manufactured by STMicroelectronics, housed in a TO-39 metal can package. This device is rated for 50 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 800 mW power dissipation. The 2N1613 is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs.

Substiute Parts

2N1613
STMicroelectronicsIn Stock: 21122N1613 Datasheet
2N1613
Current Part
2N3725
Microchip TechnologyIn Stock: 20202N3725 Datasheet
2N3725
Direct
2N1711S
Microchip TechnologyIn Stock: 24992N1711S Datasheet
2N1711S
Similar

Key Parameters

Parameter Value
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 500 mA
Power - Max 800 mW
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
Current - Collector Cutoff (Max) 10nA (ICBO)
Frequency - Transition 80MHz
Operating Temperature -65°C ~ 200°C (TJ)
Package / Case TO-205AD, TO-39-3 Metal Can
Mounting Type Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the 2N1613 is determined by electrical and mechanical parameter compatibility within the NPN BJT category. The critical parameters governing substitution are:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Collector-emitter breakdown voltage must equal or exceed 50 V
  • Maximum collector current must equal or exceed 500 mA
  • Maximum power dissipation must equal or exceed 800 mW
  • Vce saturation characteristics must be compatible
  • DC current gain (hFE) must support intended circuit operation
  • Operating temperature range must encompass application requirements

Mechanical Compatibility Criteria:

  • Package type must be TO-39 metal can (TO-205AD, TO-39-3)
  • Through-hole mounting configuration

The substitute parts identified below meet these criteria with varying degrees of parameter alignment. Direct substitutes maintain electrical specifications within the defined operating envelope. Similar substitutes provide functional equivalence with parameter variations that require circuit-level evaluation.

Parameter Comparison

Parameter 2N1613 (Main) 2N3725 (Direct) 2N1711S (Similar)
Manufacturer STMicroelectronics Microchip Technology Microchip Technology
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 50 V Not specified 30 V
Current - Collector (Ic) (Max) 500 mA Not specified 500 mA
Power - Max 800 mW Not specified 800 mW
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA Not specified 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max) 10nA (ICBO) Not specified 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V Not specified 100 @ 150mA, 10V
Frequency - Transition 80MHz Not specified Not specified
Operating Temperature -65°C ~ 200°C (TJ) Not specified -65°C ~ 200°C (TJ)
Package / Case TO-205AD, TO-39-3 Metal Can Not specified TO-205AD, TO-39-3 Metal Can
Mounting Type Through Hole Not specified Through Hole
Product Status Obsolete Active Active
RoHS Status ROHS3 Compliant RoHS non-compliant RoHS non-compliant

Engineering Selection Recommendations

2N3725 (Direct Substitute): The 2N3725 manufactured by Microchip Technology is listed as a direct substitute. This part is currently in active production status with 1914 units in stock. However, critical electrical parameters including collector-emitter breakdown voltage, collector current maximum, power dissipation, and DC current gain are not specified in available documentation. The RoHS non-compliant status differs from the ROHS3 compliant 2N1613. Selection of this part requires access to complete datasheet specifications to confirm parameter compatibility.

2N1711S (Similar Substitute): The 2N1711S manufactured by Microchip Technology is classified as a similar substitute. This part is in active production with 2450 units in stock. The 2N1711S maintains mechanical compatibility through identical TO-39 package and through-hole mounting. Electrical parameters show alignment in collector current (500 mA), power dissipation (800 mW), Vce saturation (1.5V @ 15mA, 150mA), collector cutoff current (10nA), and operating temperature range (-65°C ~ 200°C). The collector-emitter breakdown voltage is specified at 30 V, which is 20 V lower than the 2N1613 specification of 50 V. The DC current gain (hFE) is specified at 100 @ 150mA, 10V, which exceeds the 2N1613 minimum of 40. The RoHS non-compliant status differs from the ROHS3 compliant 2N1613. This part is suitable for applications where the 30 V breakdown voltage specification is adequate.

Frequently Asked Questions (FAQ)

Q: Can the 2N1613 be directly replaced with the 2N3725?

A: The 2N3725 is identified as a direct substitute. However, complete electrical parameter specifications for the 2N3725 are not provided in the available data. Confirmation of collector-emitter breakdown voltage, maximum collector current, power dissipation, and DC current gain specifications is required before implementation.

Q: What is the primary limitation of the 2N1711S as a substitute?

A: The 2N1711S has a collector-emitter breakdown voltage rating of 30 V compared to the 2N1613 specification of 50 V. Applications requiring operation at voltages between 30 V and 50 V cannot use the 2N1711S. All other critical electrical parameters are compatible or exceed the 2N1613 specifications.

Q: Are both substitute parts mechanically compatible with the 2N1613?

A: The 2N1711S maintains full mechanical compatibility through identical TO-39 metal can packaging and through-hole mounting. The 2N3725 mechanical specifications are not provided in the available data.

Q: What is the impact of RoHS compliance differences?

A: The 2N1613 is ROHS3 compliant, while both substitute parts (2N3725 and 2N1711S) are RoHS non-compliant. Applications subject to RoHS regulatory requirements must account for this compliance status difference.

Q: How does the DC current gain (hFE) difference affect circuit design?

A: The 2N1711S specifies a minimum DC current gain of 100 @ 150mA, 10V, compared to the 2N1613 minimum of 40 @ 150mA, 10V. The higher gain of the 2N1711S may reduce base drive requirements in switching applications but does not prevent substitution in circuits designed for the lower gain specification.

Q: Are both substitute parts currently available?

A: Yes. The 2N3725 has 1914 units in stock, and the 2N1711S has 2450 units in stock. Both parts are in active production status.

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