Equivalent & Substitute Parts for 2DD1664P-13

Part Overview

The 2DD1664P-13 is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 1 A, collector-emitter breakdown voltage of 32 V, and a transition frequency of 280 MHz. The part is packaged in SOT-89-3 surface mount configuration with a maximum power dissipation of 1 W and operates across a temperature range of -55°C to 150°C.

The 2DD1664P-13 maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Substitute parts become necessary when addressing design requirements for alternative package formats, enhanced power handling capabilities, automotive-grade qualification, or when the primary part experiences supply constraints. The substitute parts listed maintain electrical compatibility within specified parameter tolerances while offering alternative mechanical packaging or performance characteristics.

Substiute Parts

2DD1664P-13
Diodes IncorporatedIn Stock: 37472DD1664P-13 Datasheet
2DD1664P-13
Current Part
2SD1664T100P
Rohm SemiconductorIn Stock: 34312SD1664T100P Datasheet
2SD1664T100P
Direct
2SCR293P5T100
Rohm SemiconductorIn Stock: 22022SCR293P5T100 Datasheet
2SCR293P5T100
MFR Recommended
NSS30101LT1G
onsemiIn Stock: 295086NSS30101LT1G Datasheet
NSS30101LT1G
MFR Recommended
PBSS303NX,115
Nexperia USA Inc.In Stock: 5270PBSS303NX,115 Datasheet
PBSS303NX,115
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 32 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 100mA, 3V
Power - Max 1 W
Frequency - Transition 280 MHz
Operating Temperature Range -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-243AA
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the 2DD1664P-13 is determined by the following critical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN configuration required
  • Current - Collector (Ic) (Max): Minimum 1 A capability
  • Voltage - Collector Emitter Breakdown (Max): Minimum 30 V rating
  • Vce Saturation characteristics: Compatible saturation voltage performance
  • DC Current Gain (hFE): Minimum 82 @ specified operating point
  • Operating Temperature: Support for -55°C to 150°C range or subset thereof
  • RoHS3 Compliance: Required for regulatory alignment
  • Moisture Sensitivity Level: MSL 1 classification

Secondary Considerations:

  • Power dissipation capability (minimum 1 W preferred, higher ratings acceptable)
  • Transition frequency (280 MHz baseline; lower frequencies acceptable for non-RF applications)
  • Package format (TO-243AA primary; alternative surface mount packages acceptable with PCB layout verification)
  • Product Status (Active preferred; Not For New Designs acceptable for legacy applications)

The substitute parts listed maintain NPN configuration with collector current ratings of 1 A or greater and breakdown voltages of 30 V or higher, ensuring functional compatibility across the specified operating envelope.

Parameter Comparison

Parameter 2DD1664P-13 (Main) 2SD1664T100P 2SCR293P5T100 NSS30101LT1G PBSS303NX,115
Manufacturer Diodes Incorporated Rohm Semiconductor Rohm Semiconductor onsemi Nexperia USA Inc.
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 5.1 A
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA 400mV @ 50mA, 500mA 350mV @ 25mA, 500mA 200mV @ 100mA, 1A 220mV @ 255mA, 5.1A
Current - Collector Cutoff (Max) 100 nA 500 nA 100 nA 100 nA 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 100mA, 3V 82 @ 100mA, 3V 270 @ 100mA, 2V 300 @ 500mA, 5V 250 @ 2A, 2V
Power - Max 1 W 2 W 500 mW 310 mW 2.1 W
Frequency - Transition 280 MHz 150 MHz 320 MHz 100 MHz 130 MHz
Operating Temperature (TJ) -55 to 150°C 150°C 150°C -55 to 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-236-3, SC-59, SOT-23-3 TO-243AA
Supplier Device Package SOT-89-3 MPT3 MPT3 SOT-23-3 (TO-236) SOT-89
Product Status Active Not For New Designs Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Automotive Grade AEC-Q100

Engineering Selection Recommendations

2SD1664T100P (Rohm Semiconductor)

The 2SD1664T100P provides electrical parameter equivalence to the 2DD1664P-13 with identical collector current (1 A), breakdown voltage (32 V), and DC current gain specifications. This part features enhanced power dissipation capability (2 W versus 1 W) and maintains RoHS3 compliance with unlimited MSL rating. However, the 2SD1664T100P carries a "Not For New Designs" product status, limiting its application to legacy system support or replacement scenarios. The transition frequency of 150 MHz is lower than the primary part, making this substitute suitable for applications not requiring high-frequency performance. Packaging is supplied as Cut Tape and Digi-Reel in MPT3 format.

2SCR293P5T100 (Rohm Semiconductor)

The 2SCR293P5T100 is an Active-status alternative offering superior transition frequency (320 MHz) and improved DC current gain (270 @ 100mA, 2V). This part maintains 1 A collector current and meets the 30 V minimum breakdown voltage requirement. The saturation voltage is lower (350mV @ 25mA, 500mA) compared to the primary part, indicating enhanced switching performance. Power dissipation is rated at 500 mW, which is lower than the primary part's 1 W specification. This substitute is suitable for applications prioritizing high-frequency operation and improved switching characteristics. RoHS3 compliance and unlimited MSL rating are maintained.

NSS30101LT1G (onsemi)

The NSS30101LT1G represents a package format alternative in SOT-23-3 (TO-236) configuration while maintaining core electrical compatibility. This part supports 1 A collector current and 30 V breakdown voltage with superior DC current gain (300 @ 500mA, 5V) and lower saturation voltage (200mV @ 100mA, 1A). The operating temperature range matches the primary part (-55°C to 150°C). Transition frequency is 100 MHz, suitable for lower-frequency applications. This substitute offers the highest inventory availability (294,989 pieces) and is recommended when PCB layout accommodates the smaller SOT-23-3 package footprint. RoHS3 compliance and unlimited MSL rating apply.

PBSS303NX,115 (Nexperia USA Inc.)

The PBSS303NX,115 is an automotive-grade transistor qualified to AEC-Q100 standards, making it suitable for automotive and harsh-environment applications. This part features significantly higher collector current capability (5.1 A) and power dissipation (2.1 W), providing design margin for applications requiring higher current handling. The 30 V breakdown voltage meets minimum requirements, and the DC current gain (250 @ 2A, 2V) supports robust switching performance. Transition frequency is 130 MHz. This substitute is selected when automotive qualification or enhanced current capacity is required. RoHS3 compliance and unlimited MSL rating are maintained.

Frequently Asked Questions (FAQ)

Q: Can the 2DD1664P-13 be directly replaced with any of these substitute parts without PCB modification?

A: Direct replacement without PCB modification is possible only with 2SD1664T100P and 2SCR293P5T100, as both maintain the TO-243AA package format. The NSS30101LT1G uses SOT-23-3 packaging, requiring PCB layout changes. The PBSS303NX,115 uses SOT-89 packaging, also requiring layout verification. Electrical functionality is compatible across all substitutes within their specified operating parameters.

Q: What is the primary difference between the 2DD1664P-13 and 2SD1664T100P?

A: Both parts share identical electrical specifications for collector current (1 A), breakdown voltage (32 V), and DC current gain (82 @ 100mA, 3V). The 2SD1664T100P offers higher power dissipation (2 W versus 1 W) but carries "Not For New Designs" status. The 2DD1664P-13 is recommended for new designs due to its Active product status.

Q: Which substitute part offers the best high-frequency performance?

A: The 2SCR293P5T100 provides the highest transition frequency at 320 MHz, compared to the primary part's 280 MHz. This makes it suitable for applications requiring enhanced high-frequency switching capability.

Q: Is automotive qualification available in the substitute parts?

A: Yes, the PBSS303NX,115 is qualified to AEC-Q100 automotive standards. This part is selected when automotive-grade components are required for vehicle or harsh-environment applications.

Q: What are the temperature operating range differences among the substitutes?

A: The 2DD1664P-13 and NSS30101LT1G both support the full range of -55°C to 150°C. The 2SD1664T100P, 2SCR293P5T100, and PBSS303NX,115 are specified to 150°C maximum junction temperature without a stated lower limit, indicating suitability for standard industrial temperature ranges.

Q: Can the PBSS303NX,115 be used in applications designed for 1 A maximum current?

A: Yes, the PBSS303NX,115 is rated for 5.1 A maximum collector current, making it suitable for applications requiring 1 A or less. The higher current rating provides design margin and does not create incompatibility with 1 A circuit requirements.

Q: What packaging considerations apply when selecting NSS30101LT1G?

A: The NSS30101LT1G uses SOT-23-3 (TO-236) packaging, which is significantly smaller than the SOT-89-3 package of the primary part. PCB layout modifications are required, including trace routing and thermal management adjustments. This package is preferred in space-constrained applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed maintain RoHS3 compliance and unlimited moisture sensitivity level (MSL 1) rating, ensuring regulatory alignment and handling compatibility with the primary part.

Q: Which substitute part has the lowest saturation voltage?

A: The NSS30101LT1G features the lowest saturation voltage at 200mV @ 100mA, 1A, followed by the PBSS303NX,115 at 220mV @ 255mA, 5.1A. Lower saturation voltage indicates reduced power dissipation during saturation and improved switching efficiency.

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