Equivalent & Substitute Parts for 2DB1694-7 PNP Bipolar Transistor

Part Overview

The 2DB1694-7 is a PNP bipolar junction transistor manufactured by Diodes Incorporated, rated for 30V collector-emitter breakdown voltage and 1A maximum collector current in a surface mount SOT-323 package. This device is classified as obsolete, necessitating identification of active substitute components that maintain functional compatibility within specified electrical and mechanical parameters. Substitute parts must satisfy the same voltage, current, and thermal operating requirements while maintaining SOT-323 package compatibility.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	30	V
Current - Collector (Ic) (Max)	1	A
Vce Saturation (Max) @ Ib, Ic	380mV @ 25mA, 500mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	270 @ 100mA, 2V	—
Power - Max	300	mW
Frequency - Transition	300	MHz
Operating Temperature	-55 to 150	°C
Package / Case	SC-70, SOT-323	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2DB1694-7 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Transistor Type: PNP (required for circuit polarity)
Package / Case: SOT-323 (required for PCB footprint compatibility)
Voltage - Collector Emitter Breakdown: ≥30V (minimum requirement)
Current - Collector (Ic) (Max): ≥1A (minimum requirement)
Operating Temperature Range: Must include -55°C to 150°C or higher maximum

Substitute parts are grouped into two categories:

Category 1: Direct Electrical Equivalents (Same Voltage and Current Ratings) Parts maintaining 30V breakdown voltage and 1A collector current capability with identical or superior electrical characteristics. These parts provide pin-for-pin compatibility with no circuit redesign required.

Category 2: Enhanced Specification Substitutes (Higher Voltage or Power Rating) Parts exceeding the 30V voltage or 1A current specification while maintaining SOT-323 package compatibility. These parts are suitable for applications where higher voltage or current margins are beneficial, provided circuit design accommodates the enhanced ratings.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max)	Vce Breakdown (Max)	Vce Sat @ Ib, Ic	hFE (Min)	Power (Max)	Frequency	Temp Range	Package
2DB1694-7	Diodes Inc.	Obsolete	1 A	30 V	380mV @ 25mA, 500mA	270 @ 100mA, 2V	300 mW	300 MHz	-55 to 150°C	SOT-323
2SB1694T106	Rohm Semiconductor	Active	1 A	30 V	380mV @ 25mA, 500mA	270 @ 100mA, 2V	200 mW	320 MHz	-55 to 150°C	SOT-323
PBSS5140U,115	Nexperia USA Inc.	Active	1 A	40 V	500mV @ 100mA, 1A	300 @ 100mA, 5V	350 mW	150 MHz	-55 to 150°C	SOT-323
ZUMT720TA	Diodes Inc.	Active	750 mA	40 V	250mV @ 100mA, 750mA	90 @ 500mA, 2V	500 mW	220 MHz	-55 to 150°C	SOT-323
BC858BWT1G	onsemi	Active	100 mA	30 V	650mV @ 5mA, 100mA	220 @ 2mA, 5V	150 mW	100 MHz	-55 to 150°C	SOT-323
BC858W,115	Nexperia USA Inc.	Active	100 mA	30 V	600mV @ 5mA, 100mA	125 @ 2mA, 5V	200 mW	100 MHz	-55 to 150°C	SOT-323
BC859BW,115	Nexperia USA Inc.	Active	100 mA	30 V	650mV @ 5mA, 100mA	220 @ 2mA, 5V	200 mW	100 MHz	-55 to 150°C	SOT-323
BC859CW,115	Nexperia USA Inc.	Active	100 mA	30 V	650mV @ 5mA, 100mA	420 @ 2mA, 5V	200 mW	100 MHz	-55 to 150°C	SOT-323

Engineering Selection Recommendations

Primary Substitute (Direct Equivalent): The 2SB1694T106 from Rohm Semiconductor is the primary substitute for the 2DB1694-7. This part maintains identical voltage (30V) and current (1A) ratings with matching Vce saturation and DC current gain specifications. The device is active in production, ROHS3 compliant, and available in SOT-323 package. The transition frequency is slightly higher (320MHz vs 300MHz), providing improved high-frequency performance. Maximum power rating is reduced to 200mW, which is acceptable for applications within the original 300mW specification.

Secondary Substitute (Enhanced Voltage Rating): The PBSS5140U,115 from Nexperia USA Inc. provides enhanced voltage margin with 40V breakdown voltage while maintaining 1A collector current capability. This part is AEC-Q100 qualified for automotive applications and offers superior power dissipation (350mW). The device is suitable for applications requiring higher voltage headroom or automotive-grade reliability. Vce saturation is higher (500mV vs 380mV), which may impact circuit performance in saturation-dependent applications.

Limited Current Applications: The BC858BWT1G, BC858W,115, BC859BW,115, and BC859CW,115 are suitable only for applications where collector current does not exceed 100mA. These parts maintain 30V voltage rating and SOT-323 package compatibility but are not direct substitutes for 1A applications. BC859CW,115 offers the highest DC current gain (420 @ 2mA, 5V) among this group.

Not Recommended: The ZUMT720TA has reduced collector current rating (750mA), which falls below the 1A requirement of the original part and is not suitable as a direct substitute.

Frequently Asked Questions (FAQ)

Q1: Can I use BC858BWT1G as a substitute for 2DB1694-7?

A: No. The BC858BWT1G has a maximum collector current rating of 100mA, while the 2DB1694-7 is rated for 1A. Using this part in a 1A application will exceed its maximum ratings and cause device failure. The BC858BWT1G is suitable only for applications requiring less than 100mA collector current.

Q2: What is the difference between 2SB1694T106 and 2DB1694-7?

A: Both parts are PNP transistors with identical 30V voltage and 1A current ratings in SOT-323 packages. The 2SB1694T106 is manufactured by Rohm Semiconductor (versus Diodes Incorporated for the original) and is currently in active production. The 2SB1694T106 has a slightly higher transition frequency (320MHz vs 300MHz) and lower maximum power rating (200mW vs 300mW). Electrical characteristics including Vce saturation and DC current gain are identical.

Q3: Is PBSS5140U,115 a direct replacement for 2DB1694-7?

A: PBSS5140U,115 is a functional substitute with enhanced specifications. It maintains 1A collector current and SOT-323 package compatibility but has a higher voltage rating (40V vs 30V). The higher Vce saturation (500mV vs 380mV) may affect circuit performance in saturation-dependent applications. This part is suitable for designs where higher voltage margin is beneficial or required.

Q4: Can I use ZUMT720TA instead of 2DB1694-7?

A: No. The ZUMT720TA has a maximum collector current of 750mA, which is below the 1A requirement. This part cannot safely handle the full 1A current specification of the original device.

Q5: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document are ROHS3 compliant and REACH unaffected, matching the environmental compliance status of the original 2DB1694-7.

Q6: What is the difference between BC858W,115 and BC859BW,115?

A: Both parts are 100mA PNP transistors in SOT-323 packages with 30V voltage rating. The BC859BW,115 has higher DC current gain (220 @ 2mA, 5V vs 125 @ 2mA, 5V for BC858W,115) and slightly higher Vce saturation (650mV vs 600mV). Both are AEC-Q101 automotive qualified. Neither is suitable for 1A applications.

Q7: Does package compatibility guarantee electrical compatibility?

A: No. While all listed parts use SOT-323 packages, electrical compatibility requires matching voltage, current, and thermal specifications. The BC858 and BC859 series, despite SOT-323 packaging, are limited to 100mA and are not electrically compatible with 1A applications.

Q8: What is the operating temperature range for substitute parts?

A: All substitute parts maintain the -55°C to 150°C operating temperature range of the original 2DB1694-7, ensuring thermal compatibility in equivalent applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message