Equivalent & Substitute Parts for 2DB1188P-13

Part Overview

The 2DB1188P-13 is a Bipolar (BJT) Transistor PNP manufactured by Diodes Incorporated, rated for 32 V collector-emitter breakdown voltage and 2 A maximum collector current. This surface mount device in SOT-89-3 package is designed for general-purpose switching and amplification applications operating across -55°C to 150°C junction temperature range.

The 2DB1188P-13 carries an Obsolete product status. Identification of equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	2	A
Voltage - Collector Emitter Breakdown (Max)	32	V
Vce Saturation (Max) @ Ib, Ic	800mV @ 200mA, 2A	—
Current - Collector Cutoff (Max)	100nA	ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce	82 @ 500mA, 3V	—
Power - Max	1	W
Frequency - Transition	120	MHz
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-243AA	—
Supplier Device Package	SOT-89-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2DB1188P-13 is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A minimum
Voltage - Collector Emitter Breakdown (Max): 32 V minimum
Mounting Type: Surface Mount
Package / Case: TO-243AA
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

Vce Saturation characteristics
DC Current Gain (hFE) performance
Frequency - Transition capability
Power dissipation rating
RoHS and environmental compliance

Substitute parts are grouped into two categories:

Direct Manufacturer Equivalents: Parts from Diodes Incorporated with identical electrical specifications and packaging, differing only in product status or DC current gain characteristics.

Cross-Manufacturer Alternatives: Parts from Rohm Semiconductor, Micro Commercial Co, and Nexperia USA Inc. that meet or exceed the primary electrical and mechanical requirements while maintaining TO-243AA package compatibility and surface mount configuration.

Parameter Comparison

Parameter	2DB1188P-13	2DB1188Q-13	2SB1188-Q-TP	2SB1188-R-TP	PBSS5330X,115	2SAR512P5T100	2SAR542PT100
Manufacturer	Diodes Inc.	Diodes Inc.	Micro Commercial Co	Micro Commercial Co	Nexperia USA Inc.	Rohm Semiconductor	Rohm Semiconductor
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	2 A	2 A	2 A	2 A	3 A	2 A	5 A
Voltage - Collector Emitter Breakdown (Max)	32 V	32 V	32 V	32 V	30 V	30 V	30 V
Vce Saturation (Max) @ Ib, Ic	800mV @ 200mA, 2A	800mV @ 200mA, 2A	800mV @ 200mA, 2A	800mV @ 200mA, 2A	320mV @ 300mA, 3A	400mV @ 35mA, 700mA	400mV @ 100mA, 5A
Current - Collector Cutoff (Max)	100nA	100nA	1µA	1µA	100nA	1µA	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	82 @ 500mA, 3V	120 @ 500mA, 3V	82 @ 500mA, 3V	82 @ 500mA, 3V	175 @ 1A, 2V	200 @ 100mA, 2V	200 @ 500mA, 2V
Power - Max	1 W	1 W	500 mW	500 mW	1.6 W	500 mW	2 W
Frequency - Transition	120 MHz	120 MHz	80 MHz	80 MHz	100 MHz	430 MHz	240 MHz
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	150°C	150°C	150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	SOT-89-3	SOT-89-3	SOT-89	SOT-89	SOT-89	MPT3	MPT3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Not specified	Not specified	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

2DB1188Q-13 (Diodes Incorporated)

The 2DB1188Q-13 is the primary direct equivalent for the 2DB1188P-13. Both parts share identical electrical specifications, packaging, and compliance certifications. The 2DB1188Q-13 carries Active product status with higher inventory availability (10,570 units), making it the preferred choice for design continuity. The DC current gain specification is higher (120 vs. 82 @ 500mA, 3V), providing improved performance margin. Both parts are ROHS3 compliant with MSL 1 rating.

2SB1188-Q-TP and 2SB1188-R-TP (Micro Commercial Co)

These parts maintain identical electrical specifications to the 2DB1188P-13, including 32 V breakdown voltage, 2 A collector current, and 800mV saturation voltage. Both carry Active product status. The transition frequency is lower (80 MHz vs. 120 MHz), and power dissipation is reduced to 500 mW. These parts are suitable for applications where the lower frequency specification does not impact circuit performance. Packaging is SOT-89 (compatible with TO-243AA footprint).

PBSS5330X,115 (Nexperia USA Inc.)

The PBSS5330X,115 exceeds the 2DB1188P-13 specifications in collector current (3 A vs. 2 A) and power dissipation (1.6 W vs. 1 W). The breakdown voltage is 30 V, which is 2 V lower than the original part. This part carries Automotive grade qualification (AEC-Q100) and Active product status. The DC current gain is higher (175 @ 1A, 2V), and saturation voltage is lower (320mV), indicating superior switching performance. ROHS3 compliant with MSL 1 rating.

2SAR512P5T100 (Rohm Semiconductor)

The 2SAR512P5T100 maintains 2 A collector current and 30 V breakdown voltage. Power dissipation is 500 mW. The transition frequency is significantly higher (430 MHz), and DC current gain is elevated (200 @ 100mA, 2V). This part is suitable for higher-frequency applications. Active product status with high inventory availability (680,300 units). ROHS3 compliant with MSL 1 rating.

2SAR542PT100 (Rohm Semiconductor)

The 2SAR542PT100 provides enhanced current capability (5 A vs. 2 A) and power dissipation (2 W vs. 1 W) while maintaining 30 V breakdown voltage. Transition frequency is 240 MHz. DC current gain is 200 @ 500mA, 2V. This part is suitable for applications requiring higher current handling. Active product status with inventory availability (114,300 units). ROHS3 compliant with MSL 1 rating.

Frequently Asked Questions (FAQ)

Q: Can the 2DB1188Q-13 be used as a direct replacement for the 2DB1188P-13?

A: Yes. The 2DB1188Q-13 is electrically and mechanically identical to the 2DB1188P-13. Both parts share the same 32 V breakdown voltage, 2 A collector current, SOT-89-3 packaging, and operating temperature range. The 2DB1188Q-13 carries Active product status and is the recommended direct equivalent.

Q: What is the difference between SOT-89-3 and SOT-89 packaging?

A: SOT-89-3 and SOT-89 refer to the same physical package (TO-243AA). Both designations describe a three-terminal surface mount package with identical footprint and pin configuration. Parts specified as SOT-89 or SOT-89-3 are mechanically interchangeable.

Q: Can I use the 2SAR542PT100 in place of the 2DB1188P-13?

A: The 2SAR542PT100 is electrically compatible for applications where the 2 A collector current specification is not exceeded. The 2SAR542PT100 provides 5 A capability, which exceeds the original requirement. However, the breakdown voltage is 30 V (vs. 32 V), and power dissipation is 2 W (vs. 1 W). Verify that the 30 V rating is acceptable for your circuit design before substitution.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Transistor Type (PNP), (2) Collector current rating (minimum 2 A), (3) Collector-emitter breakdown voltage (minimum 32 V), (4) Surface mount configuration, (5) TO-243AA package compatibility, and (6) Operating temperature range (-55°C to 150°C minimum). Additional considerations include Vce saturation characteristics, DC current gain, and frequency response based on application requirements.

Q: Why is the 2DB1188P-13 marked as Obsolete?

A: The 2DB1188P-13 carries Obsolete product status from Diodes Incorporated. The 2DB1188Q-13 is the active production equivalent and should be used for new designs and ongoing production requirements.

Q: Are all substitute parts ROHS3 compliant?

A: The 2DB1188Q-13, PBSS5330X,115, 2SAR512P5T100, and 2SAR542PT100 are explicitly specified as ROHS3 compliant. The 2SB1188-Q-TP and 2SB1188-R-TP do not have RoHS status specified in the provided data. Verify RoHS compliance with the manufacturer if this certification is required for your application.

Q: What is the Moisture Sensitivity Level (MSL) for these parts?

A: The 2DB1188P-13, 2DB1188Q-13, PBSS5330X,115, 2SAR512P5T100, and 2SAR542PT100 are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. The 2SB1188-Q-TP and 2SB1188-R-TP do not have MSL specifications provided.

Q: Can I use the PBSS5330X,115 in a 32 V circuit?

A: The PBSS5330X,115 has a 30 V breakdown voltage specification, which is 2 V lower than the 2DB1188P-13. For circuits operating at or near 32 V, the reduced voltage margin may present a reliability concern. Verify that your circuit design operates within the 30 V specification before substitution.

Q: Which substitute part has the highest transition frequency?

A: The 2SAR512P5T100 has the highest transition frequency at 430 MHz, compared to 120 MHz for the 2DB1188P-13. This part is suitable for higher-frequency switching applications.

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