2DB1184Q-13 PNP Bipolar Junction Transistor Equivalent & Substitute Parts

Part Overview

The 2DB1184Q-13 is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for surface mount applications in the TO-252-3 (DPAK) package. This transistor operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 3 A and 15 W power dissipation capability. The device is classified as Active product status and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts become necessary when the primary component experiences supply constraints, extended lead times, or when design requirements permit operation within the electrical and mechanical parameters of alternative qualified devices. The substitute parts listed maintain electrical compatibility through matching collector current ratings, voltage specifications, and package form factors.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	3	A
Voltage - Collector Emitter Breakdown (Max)	50	V
Vce Saturation (Max) @ Ib, Ic	1 V @ 200 mA, 2 A	—
Current - Collector Cutoff (Max)	1	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500 mA, 3 V	—
Power - Max	15	W
Frequency - Transition	110	MHz
Operating Temperature Range	-55 to 150	°C
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the 2DB1184Q-13 is determined by the following critical parameters:

Mandatory Matching Criteria:

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Current - Collector Cutoff (Max): 1 µA (ICBO)

Allowable Parameter Variations: Substitute parts may differ in the following parameters while maintaining functional compatibility:

Vce Saturation (Max): Variations permitted within design margin
DC Current Gain (hFE) (Min): Higher values acceptable
Power - Max: Higher power ratings acceptable
Frequency - Transition: Higher frequency capability acceptable
Operating Temperature Range: Extended upper temperature limits acceptable

The substitute parts 2SA2126-TL-E and 2SB1202T-TL-E satisfy all mandatory matching criteria and are qualified as direct substitutes for the 2DB1184Q-13.

Parameter Comparison

Parameter	2DB1184Q-13 (Diodes Inc.)	2SA2126-TL-E (onsemi)	2SB1202T-TL-E (onsemi)
Transistor Type	PNP	PNP	PNP
Current - Collector (Ic) (Max)	3 A	3 A	3 A
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	1 V @ 200 mA, 2 A	520 mV @ 100 mA, 2 A	700 mV @ 100 mA, 2 A
Current - Collector Cutoff (Max)	1 µA	1 µA	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500 mA, 3 V	200 @ 100 mA, 2 V	200 @ 100 mA, 2 V
Power - Max	15 W	800 mW	1 W
Frequency - Transition	110 MHz	390 MHz	150 MHz
Operating Temperature Range	-55 to 150 °C	150 °C (TJ)	150 °C (TJ)
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Obsolete

Engineering Selection Recommendations

2SA2126-TL-E (onsemi) - Primary Substitute

The 2SA2126-TL-E is the recommended substitute for the 2DB1184Q-13. This device maintains all mandatory electrical parameters including 3 A collector current, 50 V breakdown voltage, and TO-252-3 package compatibility. The 2SA2126-TL-E is classified as Active product status, ensuring continued availability and supply chain stability. The device is ROHS3 compliant with MSL 1 rating, matching the compliance profile of the primary part. The higher DC current gain (200 vs. 120) and increased transition frequency (390 MHz vs. 110 MHz) provide enhanced performance margins. The lower power rating (800 mW vs. 15 W) requires verification that application power dissipation does not exceed this specification.

2SB1202T-TL-E (onsemi) - Secondary Substitute

The 2SB1202T-TL-E meets all mandatory electrical and package specifications for substitution. However, this device is classified as Obsolete product status, indicating discontinued manufacturing and potential supply constraints. The 2SB1202T-TL-E exhibits electrical characteristics similar to the 2SA2126-TL-E with slightly higher Vce saturation (700 mV vs. 520 mV) and lower transition frequency (150 MHz vs. 390 MHz). The 1 W power rating is lower than the primary part specification. This substitute is suitable only when supply of the 2SA2126-TL-E is unavailable and application requirements permit operation within the specified power and frequency limitations.

Frequently Asked Questions (FAQ)

Q: Can the 2SA2126-TL-E directly replace the 2DB1184Q-13 without circuit modification?

A: The 2SA2126-TL-E maintains electrical compatibility in collector current (3 A), breakdown voltage (50 V), and package form factor (TO-252-3 DPAK). Direct substitution is permissible provided the application power dissipation does not exceed 800 mW. The higher DC current gain and transition frequency of the 2SA2126-TL-E may require bias network verification in sensitive applications.

Q: What is the primary limitation of the 2SB1202T-TL-E as a substitute?

A: The 2SB1202T-TL-E is classified as Obsolete product status, indicating discontinued manufacturing. This status creates supply chain risk and potential long-term availability concerns. Additionally, the 1 W maximum power rating is significantly lower than the 2DB1184Q-13 specification (15 W), restricting its use to applications with reduced power dissipation requirements.

Q: Are there package compatibility concerns between the main part and substitutes?

A: All three devices utilize the TO-252-3 DPAK package with identical pin configuration (2 Leads + Tab, SC-63). Surface mount assembly processes, PCB footprints, and thermal management approaches are directly compatible without modification.

Q: How do the saturation voltage differences affect circuit performance?

A: The 2DB1184Q-13 exhibits 1 V saturation at 200 mA/2 A, while the 2SA2126-TL-E shows 520 mV at 100 mA/2 A. Lower saturation voltage in the substitute reduces on-state power dissipation and heat generation. Applications operating in saturation mode benefit from this characteristic. Circuits with tight voltage margin specifications require evaluation of the lower saturation voltage impact on output levels.

Q: What compliance certifications apply to all substitute parts?

A: All listed parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating. REACH status is Unaffected for all devices. ECCN classification is EAR99 for all parts, indicating standard commercial electronic components.

Q: Is the extended temperature range of the 2DB1184Q-13 (-55 to 150 °C) critical for substitution?

A: The substitute parts specify 150 °C maximum junction temperature without explicit lower temperature limit documentation. Applications requiring operation below -55 °C require confirmation that the substitute parts support this extended low-temperature range. Standard industrial applications operating within 0 to 70 °C ambient conditions are unaffected by this specification difference.

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